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    AMI SEMICONDUCTORS Search Results

    AMI SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AMI SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PEEL20CG10

    Abstract: PALC20G10
    Text: AMI PEEL 20CG10 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 20CG10 PEEL20CG10 480Kn PALC20G10

    peel153

    Abstract: No abstract text available
    Text: PEEL 153 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL153 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL153

    18CV825

    Abstract: PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell PEEL18CV8 18CV8-15
    Text: PEEL 18CV8 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 464C2 480Kfi D014273 18CV825 PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell 18CV8-15

    18CV8

    Abstract: 18CV8-15 18CV815 ami equivalent gates 18CV825 PEEL18CV8
    Text: PEEL 18CV8 AMI SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 480Ki2 480KD 18CV8 18CV8-15 18CV815 ami equivalent gates 18CV825

    PEEL 253

    Abstract: No abstract text available
    Text: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL253 PEEL 253

    AMI semiconductors

    Abstract: No abstract text available
    Text: AMI PEEL 273 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL273 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL273 AMI semiconductors

    22CV10Z

    Abstract: No abstract text available
    Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 22CV10 PEEL22CV10 PEEL22CFigure 22CV10Z

    18CV8

    Abstract: 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 PEEL18CV8 AMI PEEL18CV8
    Text: AMI PEEL 18CV8 SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 18CV8 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 AMI PEEL18CV8

    PEEL20CG10

    Abstract: 20CG10 PEEL 20Cg10 PALC20G10
    Text: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 20CG10 PEEL20CG10 20CG10 PEEL 20Cg10 PALC20G10

    PEEL programming

    Abstract: PEEL173 Erasable Programmable Logic Device 610 PLS173 8-12pF
    Text: AMI PEEL 173 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description FPLA Architecture The AMI PEEL173 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power,


    OCR Scan     		PDF PLS173 PEEL173 PEEL programming Erasable Programmable Logic Device 610 PLS173 8-12pF

    1B60

    Abstract: PEEL programming msi ms 1772
    Text: AMI PEEL 173 SEMICONDUCTORS CM O S Programmable Electrically Erasable Logic Device February 1993 Features General Description FPLA Architecture The AMI PEEL173 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power,


    OCR Scan     		PDF PEEL173 1B60 PEEL programming msi ms 1772

    22cv10

    Abstract: No abstract text available
    Text: PEEL 22CV10 Z AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 22CV10 t22CV10 PEEL22CV10

    peel273

    Abstract: No abstract text available
    Text: AMI PEEL 273 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL273 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL273 433ft

    PEEL 253

    Abstract: PEEL253
    Text: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL253 PEEL 253

    Untitled

    Abstract: No abstract text available
    Text: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable, and architecturally enhanced alternative to conventional


    OCR Scan     		PDF 20CG10 PEEL20CG10 PEEL20CG10

    74HCT Logic Family Specification

    Abstract: S5014
    Text: GO UL D 4DE D INC/ GO U L D A M I •> GOULD AMI ■ M G S S ^ l b 0 G 1 3 Ü S 4 1 ■ AMI 12-Blt, 7 /^s SelfCalibrating A/D Converter a Semiconductors S5012 Features General Description • Monolithic CMOS A/D converter Microprocessor Compatible Parallel and Serial Output


    OCR Scan     		PDF 12-Blt, S5012 12-Bit S5014/S5016 CS5012 S5012 74HCT Logic Family Specification S5014

    Untitled

    Abstract: No abstract text available
    Text: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­


    OCR Scan     		PDF 0D137Ã

    Untitled

    Abstract: No abstract text available
    Text: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Device Product Preview * Semiconductors PEEL 20CG10-15 — Synchronous preset, asynchronous clear — Independent programmable output enables Features • Advanced CM OS EEPROM Technology • Application Versatility


    OCR Scan     		PDF 20CG10-15 24-pin PALC20G10 105mA PEEL20CG10-15 PEEL20CG10

    PEEL programming

    Abstract: 22CV10Z-25 22CV10 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10
    Text: PEEL 22GV10 Z A M SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device i February 1993 Features General Description Advanced CMOS EEPROM Technology High Performance with Low Power Consumption The AMI PEEL22C V10(Z) is a CMOS Program m able


    OCR Scan     		PDF 22CV10 PEEL programming 22CV10Z-25 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10

    Untitled

    Abstract: No abstract text available
    Text: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Array Device Ptellmlaary Data • Semiconductors PEEL PA7040 General D escription User-Configurable High Density Logic Array • Create multi-level l/O-buried logic circuits • Over 120 sum-of-products functions


    OCR Scan     		PDF PA7040 155mA 13ns/20ns

    peel153

    Abstract: PEEL programming
    Text: PEEL 153 a m i SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced C M O S EEPRO M Technology The AMI PEEL153 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance,


    OCR Scan     		PDF PEEL153 PEEL programming

    AMI 9900 FAMILY

    Abstract: No abstract text available
    Text: •> GOULD A N V I Semiconductors S9980A 16-BIT MICROPROCESSOR January 1979 Features General Description □ □ The S9980A microprocessor is a software-compatible member of AMI’s 9900 family of microprocessors. Designed to minimize the system cost for smaller sys­


    OCR Scan     		PDF S9980A 16-BIT 40-Pin S9980A AMI 9900 FAMILY

    Untitled

    Abstract: No abstract text available
    Text: • > GOULD AMI CM OS Programmable Electrically Erasable Logic Device Prelim inary Data Sheet Semiconductors PEEL 18CV8-10 Features — Synchronous preset, asynchronous clear — Independent output enables • A dvanced C M O S E EPRO M Technology • A pplication Versatility


    OCR Scan     		PDF 18CV8-10 120mA PEEL18CV8

    Untitled

    Abstract: No abstract text available
    Text: •> GOULD AMI * Semiconductors ASIC Products Gale Arrays Gould AMI's arrays are fabricated in a double or triple metal, single poly, twin-tub CMOS process. They offer the CMOS advantages of low power dissipation, broad power supply voltage range (2.5 to 5.5 Volts), and high


    OCR Scan     		PDF 25-micron GD200K GD100K