AMER PHILIPS EPITAXIAL Search Results

Contextual Info: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation

500N50

Abstract: t72 marking BAW62 sot23 Philips MARKING CODE BAS55 BAW62
Contextual Info: oosmsti mtü « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode — N AMER PHILIPS/DISCRETE DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Contextual Info: N AMER PHILIPS/DISCRETE bRE T> bb53R31 DD2bR44 &E5 HAPX Philips Semiconductors Product specification Silicon planar epitaxial BAL74W high-speed diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High switching speed Vr MAX. UNIT continuous reverse

B41 diode smd

Abstract: smd diode marking 2H smd diode M4 smd diode a7 2bcj smd diode code A7 smd marking m4 BAV99W DIODE smd marking M4 DIODE smd marking A7
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 OOSb'ni Philips Semiconductors b41 * A P X Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV99W QUICK REFERENCE DATA

Contextual Info: bhsa^ai QQ242S4 S13 • APX Philips Semiconductors — — N AMER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications.

Contextual Info: N AMER PHILIPS/DISCRETE bRE J> bbSBRBl QQEbRSD 02R • APX Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAL99W QUICK REFERENCE DATA SYMBOL Epitaxial high-speed switching diode

motorola transistor 5331

Abstract: BFQ268
Contextual Info: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to

BF0232

Abstract: BFQ232A BFQ232 BA 751 s BFQ252 BFQ252A UBB434
Contextual Info: Philips Semiconductors m bbS3R31 QD31704 721 ^HAPX NPN 1 GHz video transistors £ N AMER DESCRIPTION Product specification BFQ232; BFQ232A PHILIPS/DISCRETE b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bb53R31 ODEbTflS 346 W A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV70W QUICK REFERENCE DATA

Contextual Info: N AMER PHILIPS/DISCRETE hTE bbS3T31 □DE'inb b4fl D Product specification Philips S em iconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

Contextual Info: Philips Semiconductors Preliminary specification bbSB'lBl DOBSlbD TST H A P X 2 GHz RF pow er transistor BLT10 N AMER PHILIPS/DISCRETE b'lE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation in handheld radio equipment at

Contextual Info: Philips Semiconductors H bbS3T31 DDSMbTfl 47T H A P X N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Preliminary specification b?E P BF753 FEATURES • Low cost • Low noise figure • 5 V tuner applications. DESCRIPTION NPN silicon planar epitaxial

philips MATV amplifiers

Abstract: CIL TRANSISTOR BFG621 PH* SOT223 transistor
Contextual Info: Philips Semiconductors 1^53^31 00314b7 IbT M APX Objective specification NPN 8 GHz wideband transistor BFG621 N AMER PHILIPS/DISCRETE FEATURES b'îE ]>' PINNING PIN • Low distortion DESCRIPTION • Gold metallization ensures excellent reliability 1 emitter

philips bfq

Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a

Contextual Info: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency

Contextual Info: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

BLV100

Abstract: itt 2222 ITT 232-2 ITT 2222 npn ITT 2222 A
Contextual Info: Philips Sem iconductors bbS3*ì31 □□ET2D3 bdfi * APX BLV100 UHF power transistor •N AMER PHILIPS/DISCRETE b'ìE D PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

bf0252a

Abstract: philips bfq BFQ252A bf0252 BFQ232 BFQ232A BFQ252
Contextual Info: Philips S em iconductors 0 D 31731 bbSBTBl PNP 1 GHz video transistors ^ • ^ N DESCRIPTION 7S 7 APX Product specification BFQ252; BFQ252A b*îE J> AMER PHILIPS/DISCRETE PINNING PNP Silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

Contextual Info: N AMER PHILIPS/DISCRETE b'lE T> bbS3T31 D0271D? 5^6 H A P X Preliminary specification Philips Semiconductors 1PS226 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. MAX.

Contextual Info: Philips Semiconductors b bS3 T3 i ooa^abs oaa APX Objective specification UHF power transistor BLV946 AMER PHILIPS/DISCRETE b'lE » QUICK REFERENCE DATA FEATURES • Double internal input matching for easy matching and high gain • Poly-silicon emitter ballasting

Contextual Info: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.