05SV
Abstract: No abstract text available
Text: Am3448A IEEE-488 Quad Bidirectional Transceiver DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • • • • The Am3448A is a quad bidirectional transceiver meeting the requirement of IEEE-488 standard digital interface for pro grammable instrumentation for the driver, receiver, and com
|
OCR Scan
|
Am3448A
IEEE-488
600mV
15-20ns
MIL-STD-883
n3440A
05SV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3444N N-Channel 40-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 32 @ VGS = 10V 44 @ VGS = 4.5V ID(A) 6.5 5.6 Typical Applications:
|
Original
|
AM3444N
AM3444N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3472N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = 10V 185 @ VGS = 5.5V ID(A) 2.9 2.7 Typical Applications:
|
Original
|
AM3472N
AM3472N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3407PE P-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 34 @ VGS = -4.5V 48 @ VGS = -2.5V ID(A) -5 -3 Typical Applications:
|
Original
|
AM3407PE
DS-AM3407PE-2010
95BSC
90BSC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3455P P-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
|
Original
|
AM3455P
DS-AM3455
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3447P P-Channel 40-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and
|
Original
|
AM3447P
DS-AM3447
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM3414N Analog Power N-Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS on and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power
|
Original
|
AM3414N
DS-AM3414
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3441P P-Channel 20-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and
|
Original
|
AM3441P
DS-AM3441
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3463P P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
|
Original
|
AM3463P
AM3463P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM3460N Analog Power N-Channel 60V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power
|
Original
|
AM3460N
DS-AM3460
|
PDF
|
AM343635SF-2H
Abstract: No abstract text available
Text: The RF Power House 3.4 - 3.6 GHz 3 Watt Power Amplifier AM343635SF-2H DESCRIPTION AMCOM’s AM343635SF-2H is a 2-stage power amplifier in aluminum housing with input and output SMA connectors. It has 18dB gain, 36dBm output power over the 3.4 to 3.6 GHz Band.
|
Original
|
AM343635SF-2H
AM343635SF-2H
36dBm
36dBm
AM343635SF-
|
PDF
|
AM347
Abstract: Amperex uhf linear amplifier amperex aml9-1
Text: AM347 Air Cooled UHF Power Tetrode The AM347 is a metal-ceramic, forced-air cooled, coaxial power tetrode. The tube features high gain and high linearity and is primarily intended for use as a linear broadband amplifier in band IV/V TV transmitters and transposers.
|
Original
|
AM347
AM347
Amperex
uhf linear amplifier
amperex aml9-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3458N N-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 92 @ VGS = 10V 107 @ VGS = 4.5V ID(A) 3.4 3.1 Typical Applications:
|
Original
|
AM3458N
AM3458N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3428N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
|
Original
|
AM3428N
DS-AM3428
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3435P P-Channel 20-V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC
|
Original
|
AM3435P
DS-AM3435
|
PDF
|
AM3490
Abstract: No abstract text available
Text: Analog Power AM3490NE N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 700 @ VGS = 10V 1200 @ VGS = 4.5V ID(A) 1.2 1 Typical Applications:
|
Original
|
AM3490NE
AM3490NE
AM3490
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3405P P-Channel 20-V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC
|
Original
|
AM3405P
DS-AM3405
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM3406N Analog Power N-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
|
Original
|
AM3406N
DS-AM3406
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM3445P Analog Power P-Channel 20-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and
|
Original
|
AM3445P
DS-AM3445
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3456N N-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power
|
Original
|
AM3456N
DS-AM3456
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3492NE N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 1100 @ VGS = 10V 1300 @ VGS = 4.5V ID(A) 1.1 1.0 Typical Applications:
|
Original
|
AM3492NE
AM3492NE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Analog Power AM3471P P-Channel 100-V D-S MOSFET PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 600 @ VGS = -10V -100 700 @ VGS = -4.5V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments
|
Original
|
AM3471P
AM3471P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AM3456NE Analog Power N-Channel 30V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and
|
Original
|
AM3456NE
DS-AM3456NE
|
PDF
|
MC3448AL
Abstract: MC3448AP AM3448AX
Text: Am3448A IEEE-488 Quad Bidirectional Transceiver DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • • • • The Am3448A is a quad bidirectional transceiver meeting the requirement of IEEE-488 standard digital interface for pro grammable instrumentation for the driver, receiver, and com
|
OCR Scan
|
Am3448A
IEEE-488
600mV
15-20ns
MIL-STD-883
MC3448AL
MC3448AP
AM3448AX
|
PDF
|
