AM29LV* 64 BOOT Search Results

Contextual Info: TECHNOLOGY BACKGROUND AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same

AM29LV

Abstract: DL160 AM29DL323
Contextual Info: AMD DL160 and DL320 Series Flash: New Densities, New Features Technology Background July 2003 The following document refers to Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL160

Contextual Info: TECHNOLOGY BACKGROUND Back AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same

Contextual Info: Migration from 16 Megabit to 64 Megabit Flash Memory Devices Application Note This document will assist board-designers in creating a seamless migration path from AMD 16 Mb or 32 Mb low voltage LV flash and Simultaneous Read/Write (DL) devices to higher densities.

atmel 8086

Abstract: 49f020 m29F DATASHEET AM29F002 002N AT49 SST39SF010A SST39SF020A SST39SF040 SST39VF020
Contextual Info: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products Application Note April 2003 INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It

SST39WF160x

Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Contextual Info: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb

atmel 8086

Abstract: 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010
Contextual Info: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Application Note October 2005 Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It

7474

Abstract: 98P03ABK
Contextual Info: SUPPLEMENT Am29BDD160G Known Good Die—Die Revision 1 16 Megabit 1 M x 16-Bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations

spansion am29f top marking

Abstract: spansion top marking am29lv JC42 MBM29F S29CD016G S29CD-G 75281 170-nm spansion am29f part marking
Contextual Info: S29CD016G Known Good Die 16-Megabit 512 K x 32-Bit CMOS 2.5-Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory SUPPLEMENT This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates.

Contextual Info: S29CD016G Known Good Die 16 Megabit 512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Supplement Distinctive Characteristics Architecture Advantages „ Versatile I/O control — Device generates data output voltages and tolerates

10438

Contextual Info: S29CD016G Known Good Die 16 Megabit 512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Supplement Distinctive Characteristics Architecture Advantages „ Versatile I/O control — Device generates data output voltages and tolerates

Spansion good die

Contextual Info: S29CD016G Known Good Die 16-Megabit 512 K x 32-Bit CMOS 2.5-Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory SUPPLEMENT Distinctive Characteristics Architecture Advantages — Program/Erase: 50 mA max — Standby mode: CMOS: 150 µA max

7474 14 PIN

Abstract: Am29BDD160GB
Contextual Info: SUPPLEMENT Am29BDD160G Known Good Die—Die Revision 1 16 Megabit 1 M x 16-Bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations

25091

Contextual Info: SUPPLEMENT Am29BDD160G Known Good Die—Die Revision 1 16 Megabit 1 M x 16-Bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations

spansion top marking am29lv

Abstract: S29CL016J S29CD016J S29CD-J S29CL-J Spansion wafer marking spansion am29f part marking
Contextual Info: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Supplement (Advance Information) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.

MB 16651

Abstract: MB 16651 G 98n03 Am29F JC42 MBM29F S29CD032G S29CD-G spansion am29f top marking 74228
Contextual Info: S29CD032G Known Good Die 32 Megabit 1 M x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Supplement This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates.

c 5929 hot

Contextual Info: SUPPLEMENT Am29BL802C Known Good Die 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee

TS044

Abstract: AMD AM29F010B PACKAGE SA20-SA23 SA14-SA11 SA26-SA23 AM29F010 AM29F032
Contextual Info: Table of Contents Product Selector Guide Am30LV0064D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Am29LV010B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Am29F160D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

S29CL032J

Abstract: S29CD032J cd032j S29Cl032 Spansion Flash Spansion wafer marking JC42 S29CD-J S29CL-J CL032J
Contextual Info: S29CD032J/S29CL032J Known Good Die 32 Megabit 1M x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD032J and S29CL032J devices are Floating Gate products fabricated in 110 nm process technology.

Contextual Info: SUPPLEMENT Am29BL802C Known Good Die 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee

S29CL016J

Abstract: S29CL032 S29CD016J am29lv JC42 S29CD-J S29CL-J CD016J cl016 CL-016
Contextual Info: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.

MICRON mcp

Abstract: 31136 S71NS064JA0 S71NS128JA0
Contextual Info: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics

amd 15h power

Abstract: TSOP-48 pcb LAYOUT TSOP 48 LAYOUT AM29LV640 TSOP-48 FOOTPRINT
Contextual Info: Implementing a Common Layout for AMD MirrorBit and Intel StrataFlash™ Memory Devices Application Note -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ

31136

Abstract: S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002
Contextual Info: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics