AM29BL162C Search Results

AM29BL162C

Contextual Info: Back ADVANCE INFORMATION Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors

120R

Abstract: IN3064 SA10
Contextual Info: Am29BL162C Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and

Contextual Info: Am29BL162C Known Good Die Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

AM29BL162CB

Contextual Info: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors

Contextual Info: SUPPLEMENT Am29BL162C Known Good Die 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee

Am29BL162CB-70R

Contextual Info: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and

Am29BL162CB-70R

Contextual Info: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors ■ Single power supply operation

AM29BL162 Date code

Contextual Info: SUPPLEMENT Am29BL162C Known Good Die 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee

Contextual Info: PRELIMINARY A M D il Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with w rap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors

SA10

Contextual Info: SUPPLEMENT Am29BL162C Data Sheet Supplement for PROM Programmer Manufacturers This supplement is for use with the Am29BL162C data sheet, publication number 22142. This document describes the sector protection and sector unprotection functions intended for programming equipment. The

Contextual Info: Am29BL162C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: SUPPLEMENT Am29BL162C Known Good Die 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee

AM29LVxxx

Abstract: Am29Fxxx AM29BL162C
Contextual Info: Am29BL162C 16 Megabit 1M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory • 32 words sequential with wrap around (linear 32), bottom boot • One 8K word, two 4K word, one 112K word, and seven 128K word sectors • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for

M29Fxxx

Contextual Info: P R E L IM IN A R Y A M D il Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with w rap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector

120R

Abstract: IN3064 SA10
Contextual Info: Am29BL162C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

120R

Abstract: Am29BL162CB-120R AM29BL162CB65RZI
Contextual Info: Am29BL162C Data Sheet Retired Product Am29BL162C Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.

120R

Contextual Info: Am29BL162C Data Sheet The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion will continue to offer these products to existing customers.

Contextual Info: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and

Contextual Info: PRELIMINARY AMDZ1 Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with w rap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and

Contextual Info: TECHNOLOGY BACKGROUND 3.0 Volt-only Burst Mode Flash Memory Technology Back 2 3.0 Volt-only Burst Mode Technology Background Introduction AMD, the technology leader in Flash memories, has developed a new generation of highperformance, single-power-supply flash memory devices. The Am29BL162C device is the

AM29BL162

Abstract: 10558 A1
Contextual Info: Am29BL162C Known Good Die Data Sheet Retired Product Am29BL162C Known Good Die Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.

120R

Abstract: IN3064 SA10
Contextual Info: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and