AM15572V1 Search Results

5N60M

Contextual Info: STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A STD5N60M2

10N60M2

Contextual Info: STF10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STF10N60M2 650 V 0.6 Ω 7.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

STD10N60M2

Abstract: STP10N60
Contextual Info: STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A STD10N60M2

stp7n60

Contextual Info: STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 1 Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.95 Ω 5A STD7N60M2 DPAK STP7N60M2

Contextual Info: STF28N60M2, STFI28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS on max STF28N60M2 650 V ID 0.150 Ω 22 A STFI28N60M2 • Extremely low gate charge

Contextual Info: STF28N60M2 N-channel 600 V, 0.120 Ω typ., 24 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order codes VDS @ TJmax RDS on max ID STF28N60M2 650 V 0.150 Ω 24 A(1) 1. Limited by maximum junction temperature.

Contextual Info: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max STF18N60M2 650 V 0.28 Ω ID 13 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

STP18N60M2

Contextual Info: STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A D PAK

Contextual Info: STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max STD9N40M2 TAB 0.8 Ω 450 V ID 6A • Extremely low gate charge 1 3 • Lower RDS(on) x area vs previous generation

Contextual Info: STF9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - production data Features 1 2 Order code VDS @ TJmax RDS on max ID STF9N60M2 650 V 0.78 Ω 5.5 A • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation

7N60M2

Contextual Info: STF7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STF7N60M2 650 V 0.95 Ω 5A • Extremely low gate charge 1 2 3 • Lower RDS(on) x area vs previous generation

Contextual Info: STB33N60M2 N-channel 600 V, 0.090 Ω typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK package Datasheet - preliminary data Features TAB Order code VDS @ TJmax RDS on max ID STB33N60M2 650 V 0.120 Ω 27 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation

Contextual Info: STF10N65K3 045Y N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3 Power MOSFET in a TO-220FP narrow leads package Datasheet − preliminary data Features Order code VDS STF10N65K3(045Y) 650 V RDS(on) max ID PTOT 1Ω 10 A 35 W • 100% avalanche tested

18N60M2

Contextual Info: STF18N60M2 045Y N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features Order code VDS @ TJmax RDS(on) max ID STF18N60M2(045Y) 650 V 0.28 Ω 13 A • Extremely low gate charge

6N65K3

Abstract: equivalent of 6n65k3
Contextual Info: STF6N65K3 045Y N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3 Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features Order code VDS RDS(on) max ID PTOT 1.3 Ω 5.4 A 30 W STF6N65K3(045Y) 650 V • 100% avalanche tested 3

Contextual Info: STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes STF9N60M2 STFI9N60M2 1 2 RDS on max ID 650 V 0.78 Ω 5.5 A • Extremely low gate charge

Contextual Info: STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features Order codes TAB TAB STB6N60M2 3 1 1 3 2 D PAK STD6N60M2 VDS @ TJmax RDS on max ID 650 V 1.2 Ω

Contextual Info: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STF18N60M2 650 V 0.28 Ω 13 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation

Contextual Info: STB28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes 3 1 3 D2PAK 1 VDS @ TJmax RDS on max ID 650 V 0.150 Ω

STW13N60

Abstract: STD13N60M2
Contextual Info: STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet − production data TAB Features TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 2 1

13N60M2

Abstract: 13N60 STFI13N60M2
Contextual Info: STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A STF13N60M2 STFI13N60M2 • Extremely low gate charge

Contextual Info: STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes 2 1 1 2 IPAK 3 TO-220FP VDS @ TJmax RDS on max ID 650 V

Contextual Info: STD9N60M2, STP9N60M2, STU9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 3 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.78 Ω 5.5 A STD9N60M2

stF5N60M

Abstract: 5N60M
Contextual Info: STF5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max ID STF5N60M2 650 V 1.4 Ω 3.7 A • Extremely low gate charge 1 2 • Lower RDS(on) x area vs previous generation