capax 7-35
Abstract: Felsic capacitors 125 FRS CO 47 capacitor sic-safco felsic co 18 Felsic capacitors FELSIC 018 CO 18 sic-safco capacitor FELSIC 037 CO 37 capacitor sic-safco felsic 039 Sic-Safco promisic
Text: Modèles de remplacement / Replacement types 4 Anciens modèles / Old ranges Modèles de remplacement /Replacement types ALSIC 105 FRS 1 ALSIC M 105 FRS (1) ALSIC 125 ALSIC FP CELLSIC CI IND 38.1 CMF FP - CMF CMF FRS 12.3 EPSIC R 105 ALSIC IR - ALSIC 145
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DIM600DDM17-A000
Abstract: No abstract text available
Text: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.1 September 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *
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DIM600DDM17-A000
DS5596-1
LN24180)
DIM600DDM17-A000
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DIM400GCM33-F000
Abstract: No abstract text available
Text: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.0 September 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ)
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DIM400GCM33-F000
DS5863-
LN24181)
DIM400GCM33-F000
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DFM1200NXM33-F000
Abstract: 100FITS
Text: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating
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DFM1200NXM33-F000
DS5912-1
LN25215)
DFM1200NXM33-F000
100FITS
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DFM100PXM33-F000
Abstract: No abstract text available
Text: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM100PXM33-F000
DS5907-2
DS5907-3
LN30630)
DFM100PXM33-F000
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Untitled
Abstract: No abstract text available
Text: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM100PXM33-F000
DS5907-2
DS5907-3
LN30630)
DFM100PXM33-F000
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DFM200PXM33-A000
Abstract: No abstract text available
Text: DFM200PXM33-A000 Fast Recovery Diode Module Replaces DS5496-2 DS5496-3 April 2013 LN30362 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM200PXM33-A000
DS5496-2
DS5496-3
LN30362)
DFM200PXM33-A000
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A730069
Abstract: A730064 A730036 A730057 A730078 A730084 A730052 A730023 A730077 A730014
Text: ALSIC IR 8 000 h / 105°C CO 55 10 . 100 V 15 . 5600 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications NFC 83 110 Modèle C0 55 - Longue durée DIN 41240 - Classe d'utilisation – 55°C + 105°C
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5000h
A730069
A730064
A730036
A730057
A730078
A730084
A730052
A730023
A730077
A730014
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din 41240
Abstract: A734127 A735066 A734102 A735025 A734130 alsic A734111 A734109 A735026
Text: ALSIC HV 160 . 500 V 8 000 h / 105°C 4,7 . 2200 µF ∅ 10 . 35.5 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications DIN 41240 - Classe d'utilisation - 55 + 105°C CECC 30 300 Longue durée CEI 60 384-4 Longue durée
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5000h
din 41240
A734127
A735066
A734102
A735025
A734130
alsic
A734111
A734109
A735026
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bi-directional switches IGBT
Abstract: DIM1200FSM17-A000 LIN26326
Text: DIM1200FSM17-A000 Single Switch IGBT Module DS5456-3.5 August 2008 LIN26326 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AlN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1700V 2.7V
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DIM1200FSM17-A000
DS5456-3
LIN26326)
bi-directional switches IGBT
DIM1200FSM17-A000
LIN26326
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ge traction motor
Abstract: DIM800XSM33-F000
Text: . DIM800XSM33-F000 Single Switch IGBT Module DS5906-1.1 May 2007 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability
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DIM800XSM33-F000
DS5906-1
LN25347)
DIM800XSM33-F000
ge traction motor
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4500a
Abstract: C6250 DFM900NXM45-F000 4500V 900A
Text: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating
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DFM900NXM45-F000
DS5887-1
LN24652)
DFM900NXM45-F000
4500a
C6250
4500V 900A
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TRANSISTOR C 6090
Abstract: No abstract text available
Text: . DIM1200FSM17-A000 Dual Switch IGBT Module DS5456-3.2 September 2005 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability
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DIM1200FSM17-A000
DS5456-3
LN24177)
DIM1200FSM17-A000
TRANSISTOR C 6090
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate
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RM1200HE-66S
HVM-2003-A
300A/Â
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DIM400GCM33-F000
Abstract: No abstract text available
Text: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.1 April 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ) IC
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DIM400GCM33-F000
DS5863-
LN24542)
DIM400GCM33-F000
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bi-directional switches IGBT
Abstract: DIM600DDM17-A000
Text: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.2 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ)
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DIM600DDM17-A000
DS5596-1
LN24612)
DIM600DDM17-A000
bi-directional switches IGBT
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DFM600XXM45-F000
Abstract: DS5915-1
Text: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating
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DFM600XXM45-F000
DS5915-1
LN25309)
DFM600XXM45-F000
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DFM400NXM33-F000
Abstract: 3300V FRD
Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating
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DFM400NXM33-F000
DS5910-1
LN25214)
DFM400NXM33-F000
3300V FRD
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data sheet IC 7400
Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Text: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon
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DIM1600FSM17-
DS5455-3
LN26327)
data sheet IC 7400
IC 7400 datasheet
information OF ic 7400
DIM1600FSM17-A000
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DFM100PXM33-A000
Abstract: No abstract text available
Text: DFM100PXM33-A000 Fast Recovery Diode Module Replaces DS5564-2 DS5564-3 April 2013 LN30368 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates
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DFM100PXM33-A000
DS5564-2
DS5564-3
LN30368)
DFM100PXM33-A000
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DFM400PXM33-F000
Abstract: DFM400PXM33-F
Text: DFM400PXM33-F000 Fast Recovery Diode Module Replaces DS5909-2 DS5909-3 April 2013 LN30370 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM400PXM33-F000
DS5909-2
DS5909-3
LN30370)
DFM400PXM33-F000
DFM400PXM33-F
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Untitled
Abstract: No abstract text available
Text: DFM400PXM33-A000 Fast Recovery Diode Module Replaces DS5488-3 DS5488-4 April 2013 LN30361 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM400PXM33-A000
DS5488-3
DS5488-4
LN30361)
DFM400PXM33-A000
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DFM900FXM12-A000
Abstract: DFM900FXM12-A IEC1287 10-mm
Text: DFM900FXM12-A000 Fast Recovery Diode Module Replaces DS5479-1.3 DS5479-2 April 2010 LN26758 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates
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DFM900FXM12-A000
DS5479-1
DS5479-2
LN26758)
DFM900FXM12-A000
DFM900FXM12-A
IEC1287
10-mm
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Untitled
Abstract: No abstract text available
Text: DFM600XXM65-F000 Fast Recovery Dual Diode Module DS5953-1 November 2009 LN26929 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop KEY PARAMETERS VRRM VF IF IFM 6500V 3.6V 600A 1200A (typ) (max) (max) Isolated AlSiC Base with AlN Substrates
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DFM600XXM65-F000
DS5953-1
LN26929)
DFM600XXM65-F000
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