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    Part ECAD Model Manufacturer Description Download Buy
    DM7842J/883 Rochester Electronics LLC DM7842J/883 - BCD/Decimal Visit Rochester Electronics LLC Buy
    9310FM Rochester Electronics LLC 9310 - BCD Decade Counter (Mil Temp) Visit Rochester Electronics LLC Buy
    54LS48J/B Rochester Electronics LLC 54LS48 - BCD-to-Seven-Segment Decoders Visit Rochester Electronics LLC Buy
    TLC32044IFK Rochester Electronics LLC PCM Codec, 1-Func, CMOS, CQCC28, CC-28 Visit Rochester Electronics LLC Buy
    TLC32044IN Rochester Electronics LLC PCM Codec, 1-Func, CMOS, PDIP28, PLASTIC, DIP-28 Visit Rochester Electronics LLC Buy

    ALPHA&OMEGA DATE CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOL1422

    Abstract: LTD15PD
    Text: AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1422 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is ESD protected and it is suitable for use in load switching and general


    Original     		PDF AOL1422 AOL1422 LTD15PD

    AOL1446

    Abstract: No abstract text available
    Text: AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOL1446 AOL1446

    AOL1426

    Abstract: No abstract text available
    Text: AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.


    Original     		PDF AOL1426 AOL1426

    AOL1418

    Abstract: No abstract text available
    Text: AOL1418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1418 uses advanced trench technology to provide excellent R DS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOL1418 AOL1418

    AOL1420

    Abstract: No abstract text available
    Text: AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.


    Original     		PDF AOL1420 AOL1420

    aol1412

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AOL1412 AOL1412

    AOL1702

    Abstract: SRFE
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1702 AOL1702 SRFE

    AOL1708

    Abstract: SRFE Single N-channel Trench MOSFET 30V, 100.0A
    Text: AOL1708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use


    Original     		PDF AOL1708 AOL1708 SRFE Single N-channel Trench MOSFET 30V, 100.0A

    IG 2200 19 00001

    Abstract: AOL1413
    Text: AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		PDF AOL1413 AOL1413 IG 2200 19 00001

    AOL1424

    Abstract: No abstract text available
    Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD


    Original     		PDF AOL1424 AOL1424

    T 4512 H diode

    Abstract: AOL1700 SRFE
    Text: AOL1700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		PDF AOL1700 AOL1700 T 4512 H diode SRFE

    AOL1712

    Abstract: No abstract text available
    Text: AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		PDF AOL1712 AOL1712

    Untitled

    Abstract: No abstract text available
    Text: AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power


    Original     		PDF AOL1436 AOL1436

    Untitled

    Abstract: No abstract text available
    Text: AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOL1414 AOL1414

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AOL1412 AOL1412

    aol1432

    Abstract: No abstract text available
    Text: AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1432 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		PDF AOL1432 AOL1432

    Untitled

    Abstract: No abstract text available
    Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD


    Original     		PDF AOL1424 AOL1424

    Untitled

    Abstract: No abstract text available
    Text: AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is


    Original     		PDF AOL1401 AOL1401

    AOL1408

    Abstract: No abstract text available
    Text: AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


    Original     		PDF AOL1408 AOL1408

    AOL1436

    Abstract: No abstract text available
    Text: AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power


    Original     		PDF AOL1436 AOL1436

    AOL1444

    Abstract: No abstract text available
    Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


    Original     		PDF AOL1444 AOL1444

    Untitled

    Abstract: No abstract text available
    Text: AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOL1414 AOL1414

    AOL1440

    Abstract: No abstract text available
    Text: AOL1440 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AOL1440 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a low side switch in CPU core power


    Original     		PDF AOL1440 AOL1440

    AOL1413

    Abstract: Transistor EAR - 3
    Text: AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		PDF AOL1413 AOL1413 CurrenL1413 Transistor EAR - 3