ALGAN/GAN HEMTS Search Results

ALGAN/GAN HEMTS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MGN1S1208MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

ALGAN/GAN HEMTS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GaAs HEMTs X band Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band Text: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.	Original	PDF
AlGaN/GaN HEMTs Abstract: ablestik ablebond 84-1LMI NGN-125-D 10420-F Text: High Power AlGaN/GaN HEMTs on Sapphire NGN-125-D DC-8 GHz 6000060 Rev. 1 2 Features Applications • • • • • • • • • • • High Microwave Power Output Large RF Voltage Swing, ~25 volts High Breakdown Voltages, ~ 100 volts State-of-the-Art Wide Bandgap Technology	Original	PDF	NGN-125-D 84-1LMI 10420-F AlGaN/GaN HEMTs ablestik ablebond NGN-125-D
X-band Gan Hemt Abstract: 10420 RF Nitro Communications NGN-225-D AlGaN/GaN HEMTs 84-1LMI DC-10 1651 ghz Gan transistor Text: High-Power AlGaN/GaN HEMT on SI-SiC NGN-225-D DC-10 GHz 6000061 Rev. 1 Features • • • • • • • • 2 • NGN-225-D is delivered in chip form. Call for availability of packaged parts. High Microwave Power Output Large RF Voltage Swing, ~25 V High Breakdown Voltages, ~ 100 V	Original	PDF	NGN-225-D DC-10 NGN-225-D 84-1LMI 10420-F X-band Gan Hemt 10420 RF Nitro Communications AlGaN/GaN HEMTs 1651 ghz Gan transistor
InP transistor HEMT Abstract: Gan on silicon transistor AlGaN/GaN HEMTs GaN TRANSISTOR MMIC POWER AMPLIFIER hemt Fermi level inp hemt power amplifier Text: TECHNOLOGY T RANSISTORS High-power GaN HEMTs battle for vacuum-tube territory US NAVY The vacuum tubes used in today’s millimeter-wave transmitters face an increasing threat from GaN HEMTs. Cree’s Yifeng Wu and Primit Parikh are leading the GaN charge with designs that	Original	PDF
combiner THEORY Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318 Text: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective	Original	PDF	WP100318 combiner THEORY amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Gan on silicon transistor Abstract: No abstract text available Text: GAN-ON-SI FAILURE MECHANISMS AND RELIABILITY IMPROVEMENTS S. Singhal, J.C. Roberts, P. Rajagopal, T. Li, A.W. Hanson, R. Therrien, J.W. Johnson, I.C. Kizilyalli, K.J. Linthicum Nitronex Corporation 628 Hutton Street, Suite 106, Raleigh, NC, 27606 phone: 919-807-9100; fax: 919-807-9200; e-mail: ssinghal@nitronex.com	Original	PDF
X-band Gan Hemt Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535 Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2	Original	PDF	AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Recent Study on On-state Breakdown Modeling of pHEMTs Abstract: No abstract text available Text: Recent Study on On-state Breakdown Modeling of pHEMTs Hong Yin, Cejun Wei, Yu Zhu, Alex Klimashov, Dylan Bartle Skyworks Solutions Inc. Woburn, MA 01801 Hong.Yin@skyworksinc.com Abstract—Traditionally, the on-state breakdown of pHEMTs is attributed to impact ionization and thermal breakdown under	Original	PDF
GaN ADS Abstract: CGH40010 Large Signal Model CGH40010 AlGaN/GaN HEMTs CGH40010 ads Class E amplifier class E power amplifier GaN amplifier class d amplifier theory transistor 40361 Text: A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun California Polytechnic State University –Electrical Engineering Department San Luis Obispo, CA 93407 csun@calpoly.edu, 805-756-2004 Abstract—A class B and a class F power amplifier are	Original	PDF
westinghouse transistors Abstract: No abstract text available Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,	Original	PDF	10-kV westinghouse transistors
LTTS e3 Abstract: gbs transistors Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,	Original	PDF	3A001 3A002, LTTS e3 gbs transistors