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    ALG TRANSISTOR Search Results

    ALG TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ALG TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ALY TRANSISTOR

    Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. KTC3875 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23


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    PDF KTC3875 KTA1504. OT-23 BL/SSSTC056 ALY TRANSISTOR ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING

    LF2407

    Abstract: program of GSM with ccs c compiler C28x C6711 DSP kit C5416 lc2402 TMS320TM 3G equipments dsl 500b st er C548
    Text: DSP is the E N G I N E for the I N T E R N E T A G E …and much more! We’re Extending Our DSP Lead DSP Market Share 60 50 40.5 44.8 43.2 44.1 44.7 47 48.0 TI #1 % SHARE 40 30 Lucent TI gained DSP market share in 1999 for 6th year in a row 20 Motorola 10


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    PDF C2000TM C5000TM C6000TM TMS320 1960s 1970s 1980s 1990s 2000s LF2407 program of GSM with ccs c compiler C28x C6711 DSP kit C5416 lc2402 TMS320TM 3G equipments dsl 500b st er C548

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage


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    PDF OT-23 KTC3875 OT-23

    2SC3875

    Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
    Text: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


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    PDF 2SC3875 OT-23 150mW 100mA, 100MHz 2SC3875-G 2SC3875-Y 2SC3875-GR 2SC3875 ALY TRANSISTOR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr Elite Enterprises

    ALY TRANSISTOR

    Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 KTC3875 OT-23 KTA1504 100mA, ALY TRANSISTOR ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    PDF OT-23 KTC3875 OT-23

    aly smd

    Abstract: transistor smd ALG
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    PDF KTC3875 OT-23 100mA, aly smd transistor smd ALG

    ALY TRANSISTOR

    Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR
    Text: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF KTC3875 OT-23 OT-23 KTA1504 100mA, ALY TRANSISTOR ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR

    transistor smd ALG

    Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    PDF KTC3875 OT-23 100mA, transistor smd ALG ALY SMD smd transistor marking KTC3875 transistor smd aly 10

    Marking ALY

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


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    PDF OT-23 KTC3875 OT-23 KTA1504 100mA, Marking ALY

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE: hFE=70-700 · Low noise : NF=1dB(Typ),10dB(Max) · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 KTC3875 OT-23 KTA1504 100mA,

    KTC3875

    Abstract: marking ALG transistor ALY ALY 23 sot-23 MARKING ALG
    Text: KTC3875 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value 50 60


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    PDF KTC3875 OT-23 KTC3875 OT-23 marking ALG transistor ALY ALY 23 sot-23 MARKING ALG

    KTC3875

    Abstract: ALG Transistor MARKING
    Text: KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    High hFE Low noise Complementary to KTA1504 A L 3 3 C B Top View 1 1 CLASSIFICATION OF hFE


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    PDF KTC3875 OT-23 KTA1504 KTC3875-Y KTC3875-GR 100mA, 22-Feb-2013 KTC3875 ALG Transistor MARKING

    he 8050 cd transistor

    Abstract: No abstract text available
    Text: à à HT82012 HOLTE AD PCM Synthesizer for External Serial ROM Features • • • • • • • • • • O p e ra tin g voltage: 2.4V~5.0V D irect in te rfa ce w ith th e H O L T E K se ria l ROM 12-bit ay aly sis a n d 3-bit/4-bit AD PCM coding alg o rith m


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    PDF 12-bit HT82012 KEY15) LM386 KEY15 HT23C512/HT23C010) 512Kbx4/1Mbx4 he 8050 cd transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    K 2645 transistor

    Abstract: transistor d 2645 p 01 k 2645 transistor BU 608 TRANSISTOR K 2645 transistor K 903 101S-122 101S t33-13 Scans-0014927
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply featu res: • in triple diffusion technique • Short switching time


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    PDF 0QEH503 IAL66 T-33-13 DIN41 K 2645 transistor transistor d 2645 p 01 k 2645 transistor BU 608 TRANSISTOR K 2645 transistor K 903 101S-122 101S t33-13 Scans-0014927

    Untitled

    Abstract: No abstract text available
    Text: 32E ÔE3b320 T> DG17207 b m S I P PZTA 42; P Z TA 43 NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SEM ICONDS T - - 5 3 -3 -1 • High breakdown voltage • Low collector -emitter saturation voltage • Complementary types: PZTA 92/93 PNP Marking


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    PDF E3b320 DG17207 12-mm Q62702- Z2035 OT-223 Q62702-Z2036 0Q1721Q T-33-29

    BFW17A

    Abstract: bfw17a philips semiconductor
    Text: Philips Semiconductors b b s a 'm Ü Q3 S 1 3 3 T21 AP X Product specification NPN 1 GHz wideband transistor BFW17A N AUER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


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    PDF bbS3T31 Q3S133 BFW17A MEA366 MEM17 BFW17A bfw17a philips semiconductor

    transistor BFT 95

    Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
    Text: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !


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    PDF 000531b ft-11 569-GS 000s154 hal66 if-11 transistor BFT 95 transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor

    ALG TRANSISTOR

    Abstract: transistor PNP ALG transistor BC 368
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage


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    PDF 15A3DIN ALG TRANSISTOR transistor PNP ALG transistor BC 368

    transistor 6bt

    Abstract: DC/transistor 6bt
    Text: N AMER PHILIPS/DISCRETE bbSB^Bl bTE ]> 0026345 Philips Semiconductors 050 « A P X Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack


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    PDF BU2508AF 00583SD OT199; transistor 6bt DC/transistor 6bt

    K 2645 transistor

    Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W


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    PDF 0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645

    MFC4000

    Abstract: Mfc4000p TRANSFORMAR
    Text: ,/ 4 - w a t t a u d i o AMPLIFIER ^ CONSUM ER PRODUCTS MFC4000P A monolithic silicon davlce dMignad fo r th e o utput stage o f b a tte r y p o w rad p o rtab li radios. • 260 mW of Audio Output Power


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    PDF MFC4000P 4000P MFC4000 Mfc4000p TRANSFORMAR