Diode BAY 54
Abstract: 68W35 telefunken diodes 914 Diode BAY 12 AL6G BAY69 Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69
Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T-OZ-0°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110 « / Cathoda \ [| - 11-
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r-03-Ã
Q0GT74?
T-03-09
Ij-100Â
Diode BAY 54
68W35
telefunken diodes 914
Diode BAY 12
AL6G
BAY69
Diode BAY 45
Diode BAY 69
Scans-0014926
marking 69
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TIP 3771
Abstract: DIODE WITH SOD CASE
Text: 17E T> m TELEFUNKEN ELECTRONIC fi^SDGTb 000*175? 3 • AL66 BB 204 YtitilFWìKHM electronic C re ativ e T ec h n o lo g ie ? T -0 7 -1 ? Silicon Epitaxial Planar Dual Capacitance Diodes Applications: Tuning separate resonant circuits, push-pull circuits in FM range
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E ]> • Ö^SOO^b 000ÜR75 2 ■ AL66 7 L H .4 6 . _ . " | •" ^ W Tm U IFtÜ jiM iM e le ctro n ic CfMlweTeihnotogt« High Efficiency LEDs 0 3 mm (T-1 in tinted total diffused packages Color Type Technology High efficiency red
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B--13
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K8031P
Abstract: K8031 k 8031 p K-8031 8031p pj 53 diode
Text: TELEFUNKEN ELECTRONIC W fi^SQOlb DGQ77Û7 E • AL66 D - r - Y t - i? K 8031 P ITitLitFQilMKiKl electronic Creative Technologies Optically Coupled Isolator Construction: Emitter: Detector: Applications: GaAs IR Emitting Diode Monolithic integrated circuit consists of:
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DGQ77
K8031P
K8031
k 8031 p
K-8031
8031p
pj 53 diode
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC Û1C D • Ô^SOG'îb 00Dbl72 4 ■ AL66 T Z ' Z S “- / ? T388N ' Typenreihe/Type ränge T388N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, UflRM Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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00Dbl72
T388N
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telefunken ta 350
Abstract: transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b
Text: TELEFUNKEN ELECTRONIC filC fi^ S O O ^ b D 0 0 0 5 1 0 ^ 5 • AL66 T ~ 3 f~ / y BF 310 TitUlFOMKIlIM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz In common base conflguratlon Features: • Small feedback capacltance
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ft-11
569-GS
000s154
hal66
if-11
telefunken ta 350
transistor BC 310
BF310
BC238C
MOSFET sot-143
TO92 telefunken transistors
Transistor A12
transistor AC 237
transistor bc 238 b
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transistor BUX 44
Abstract: transistor BUX BUX87 bux86 transistor BF 414
Text: A TELEFUNKEN ELECTRONIC 17E D • 0 ^ 2 0 0 % OOb'iST? ? ■ AL66 BUX 86 - BUX 87 TTIUIFy MKIM electronic Creative Tfechnotog* * T - 2 3 - D 9 Silicon NPN Power Transistors Applications: Switching mode power supply, driver circuits Features: • in multi diffusion technique
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15A3DI
transistor BUX 44
transistor BUX
BUX87
bux86
transistor BF 414
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BQ 15 Transistor
Abstract: marking 601 sot transistor bf 222 Electronic car ignition circuit
Text: TELEFUNKEN ELECTRONIC 17E i> m f l ^ o c n b ooo^bos s • AL66 . S 601 T ■¡mUlFIUJlMKil?! electronic Ctmuv « IfechnoioQtM T -3 3 -a ? Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application
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SS100
BQ 15 Transistor
marking 601 sot
transistor bf 222
Electronic car ignition circuit
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pin diagram for IC tda2030
Abstract: circuit diagram TDA2030 tda2030 7 ic audio amplifier IC tda2030 TELEFUNKEN tda2030 TDA2030 tda2030 AUDIO AMPLIFIER CIRCUIT DIAGRAM tda2030 ic audio amplifier TDA2030 2 ic 2 ic TDA2030
Text: «•— — - » - n * -i*Ti«6iiitr,i'liiii TELEFUNKEN ELECTRONIC filC D fl^QCHb 0004013 7 I AL66 TDA2030 TFIIILIIMUJMKë Melectronic Cr*itfc*1<Khno ogits Monolithic Integrated Circuit Application: Audio power amplifier for radios and television receivers
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TDA2030
O-220
pin diagram for IC tda2030
circuit diagram TDA2030
tda2030 7 ic audio amplifier
IC tda2030
TELEFUNKEN tda2030
TDA2030
tda2030 AUDIO AMPLIFIER CIRCUIT DIAGRAM
tda2030 ic audio amplifier
TDA2030 2 ic
2 ic TDA2030
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t270n
Abstract: 120C
Text: TELEFUNKEN ELECTRONIC a ie p a^soenb 00DblS3 □ • AL66 T270N Typenrelhe/Type range_ T270N_ 2000_ 2200_ 2400_ 2600* Elektrische Eigenschaften Electrical properties Höchstzulässige Weiie U ormiUrrm Periodische Vorwärts-und
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T270N
125sC
t270n
120C
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BAY 80 diode
Abstract: Diode BAY 54 Diode BAY 55 BAY69 BAY 69 Diode BAY 80
Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T - O Z - 0 ° l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110« Cathoda /«<1.6 g<Q55
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NPN Silicon Phototransistor
Abstract: L219
Text: TELEFUNKEN ELECTRONIC ]> ÛRSGO'ît. 0D07Ô55 4 • AL66 TCST 5100 ITltLiFOilKIKiKl electronic Creative Techoologies Optoelectronic Interrupter Construction: Emitter: GaAs-IR-Emitting Diode Detector: Silicon NPN Epitaxial Phototransistor Applications: Contactless optoelectronic switch, control and counter
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B--10
00D7fi5b
-V/-73
20Gtib
B--13
NPN Silicon Phototransistor
L219
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CF-400
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC aie T> a ^ O O S b GDDS3b7^ 3 • AL66 CF 400 m i » ! » electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 G Hz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • B A W ■¡TIimiFQi«l!K electronic fi^OQRb 000^73^ 1 ■ AL66 2 4 . . . B A W 2 7 CreativeTechnologies r - 0 3 - 0 1 Silicon Epitaxial Planar Diodes Applications: High speed switch in core memory Dimensions in mm g<Q55 Cathode
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BAW 30
Abstract: baw 92 24-BAW baw 29 Scans-0014926 27 DIODE
Text: TELEFUNKEN ELECTRONIC 17E D • fi^OQRb 000^73^ 1 ■ AL66 BA W 24.B A W 27 ■¡TIimiFQi«l!K electronic Creative Technologies r - 0 3 - 0 1 Silicon Epitaxial Planar Diodes Applications: High speed switch in core memory Dimensions in mm Cathode >26 g< Q 55
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24-BAW
BAW 30
baw 92
baw 29
Scans-0014926
27 DIODE
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baw 92
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • fi^OQRb 000^73^ 1 ■ AL66 B A W 2 4 .B A W 2 7 ■¡TIimiFQi«l!K electronic CreativeTechnologies r- 0 3 - 0 1 Silicon Epitaxial Planar Diodes Applications: High speed switch in core memory Dimensions in mm Cathode >26 g<Q55
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r-03-oi
baw 92
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BPW 89
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • a^SQCHfci 00Q65E4 a ■ AL66 ^ RPW 89 _ , - m § F « K l& S electronic CrMlrviTschr>oiogt*s ( ^ i f / * S * 3 i Silicon Photo PIN Diode (N-Type j Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.
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00Q65E4
5x101
BPW 89
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S243P
Abstract: diode B05 J2/Optical Detector
Text: TELEFUNKEN ELECTRONIC m i l F M K I K electronic 17E J> • fl'JSGG'ib 00065*35 3 ■ AL66 S 243 P _ T - f r / - 6 7 Creative Tschoofegiés Opto - Hybrid - Detector i- i Prelirainary specifications Applications: Trans impedance amplifier, detector for optical communication,
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D00S5S3
S243P
diode B05
J2/Optical Detector
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telefunken u111B
Abstract: U111B U208B telefunken 1007 Telefunken u 208 b U208
Text: A 4ME ]> ö^aOCHb QQ1Q473 5 • AL66 , ■ U 208 B •U 208B-FP PHASE CONTROL CIRCUIT Gênerai Triac Control with Retrigger "’p G b> O 0 TELEFUNKEN EL E C T R O N I C Technology: Bipolar Features: • Automatic retriggering • Triggering pulse typ. 125 mA
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QQ1Q473
208B-FP
T-65-09
telefunken u111B
U111B
U208B
telefunken 1007
Telefunken u 208 b
U208
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S460D
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • fi^QCHb OOtH^O? 7 ■ AL66 S 460 D ITKUBPU IM IG ^ electronic Creative Technologies Preliminary specifications for samples GaAs-Schottky Diode Quad T -0 7 -O ? Application: Ring mixer Features; • Low forward voltage • Differential forward resistance
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J133
Abstract: Telefunken Electronic FLL100 a 4712 114144 BPW39 W-25 AL6G TD-325 COX-18
Text: TELEFUNKEN ELECTRONIC 17E D • fi'^OQ'ib OOOfiMlb 5 ■ AL66 BPW 39 ¥ LI FI!J1ÄIMelectronic ! CrMtMliKhnoipgtM Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits Features: • Plastic case white clear
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0001141b
BPW39
10B3DIN41868
J133
Telefunken Electronic
FLL100
a 4712
114144
BPW39
W-25
AL6G
TD-325
COX-18
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T12N
Abstract: 1256C A-04 DIN40040
Text: TELEFUNKEN ELECTRONIC filC » • i H S D M b OOObOSB 7 ■ AL66 7"- T12N T yp enrelhe/Typ e range T12N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte U drmi U rrh Periodische Vorwärts- und repetitive peak forward off-state Rückwärts-Spitzensperrspannung
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1256C.
T12N
1256C
A-04
DIN40040
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T60N
Abstract: RQK-10
Text: TELEFUNKEN ELECTRONIC ßlC D • fl'ìBQO'ìti OODbOTÖ 7 ■ AL66 T"-25^ 1 T60N Typenrelhe/Type ränge T60N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U o r m i U r r m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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U417B
Abstract: u417
Text: TELEFUNKEN ELECTRONIC filC D ÛTSDDSb QODBfi^S 1 • AL66 U 417 B m iM A K IM electronic CrMtiv«Ttahnotôû* Monolithic Integrated Circuit Applications: AM-/FM-/ZF-and Audlo-Ampllfier Features: • Large supply voltage range VS= 3.15V • Audio output power P0 = 0.7 W
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