AL16V8 Search Results

gal 16v8 programming algorithm

Abstract: gal programming algorithm GAL programming Guide GAL16V8QS TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification
Contextual Info: Semiconductor AL16V8QS-10L, -15L 20-Pin 0.8jli EEC M O S PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

Contextual Info: AL16V8Z AL16V8ZD Lattice Zero Power E2CMOS PLD FEATURES FU N C TIO N AL B LO C K D IAG R AM • ZER O PO W ER E2C M O S TEC H N O LO G Y — 100|jA Standby Current — Input Transition Detection on G AL16V8Z — Dedicated Pow er-dow n Pin on G AL16V8ZD — Input and Output Latching During Pow er Down

GAL16V8QS15

Abstract: 16V8QS GAL16V8QS SH 2104 20-PIN ic ir 2112 pin layout 527S49 gal programming specification opal GAL 16 v 8 D DIP
Contextual Info: Semiconductor AL16V8QS-10L, -15L 20-Pin 0.8jli EECMOS PLDs General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

GAL16V8QS

Abstract: 928 6v8a opal VD 5028 GAL programming Guide T0,8N gal16v8qs15lvc GAL16V8QS-10L gal programming algorithm AC021
Contextual Info: Semiconductor AL16V8QS-10L, -15L 20-Pin 0.8 jli EECM OS PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

Contextual Info: / = 7 SGS-THOMSON G AL16V8S KiiD ^ S iL[i©Tr (S)[MD(gi E2PR0M CMOS PROGRAMMABLE LOGIC DEVICE • HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 15ns maximum propagation delay (AL16V8S-15Exx) - Fmax = 50MHz - 12ns max. from clock input to data output

16V8A

Abstract: GAL16V8A GAL programmer schematic 200a liu GAL16VB GAL16VBB aco iad 16v8 16v8b GAL16V8B
Contextual Info: LATTICE SEMICONDUCTOR M7E Lattice D • S a ô b ^ Q00n32 2 HLAT G AL16V8B T-M -l< -01 G A L 1 6 V 8 A High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES >HIGH PERFORMANCE E*CMOS° TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax =100 MHz

Contextual Info: Product Selector P a r t N u m b e r D e s c r ip tio n XXXX XXXX Device Family XXX i X ! i I 1- Grade I l - j X I : Example: ispLSI 2032 G AL16V8Z Speed X Blank = Commercial I = Industrial /883 = MIL-STD-883 -Package

945 MOTHERBOARD CIRCUIT diagram

Abstract: T2A75 LM 458 AlCB LM12 LM12K computer motherboard circuit diagram HC49U/8 al4b LM12454
Contextual Info: LM12454/LM12H454/LM12458/LM12H458 & National Semiconductor LM 12454/LM 12H454/LM 12458/LM 12H458 12-Bit + Sign Data Acquisition System with Self-Calibration 9-bit conversion time 13-bit Through-put rate General Description The LM12454, LM12H454, LM 12458, and LM12H458 are

Contextual Info: Features • • • • • User-controlled Power-down Pin Low-voltage Equivalent of ATF16V8B Operates down to 3.0V Edge Sensing Zero Standby Power 10 jiA Typical Ideal For Battery Power Systems - Emulates Many 20-pin PALs - Low-cost Easy-to-use Software Tools

Contextual Info: OCT / 2 4 T ^ T 199! T /k S G g S - T H O Œ M Ï M S O Q N * § G A L I 6 V 8 A S E2PR0M CMOS PROGRAMMABLE LOGIC DEVICE • HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 10ns maximum propagation delay AL16V8AS-1 Oxxx) - Fm ax = 62.5MHz

GAL16V82D

Contextual Info: AL16V8Z AL16V8ZD ILatticer 5 •! ■ Semiconductor ■■■■Corporation • ZERO POWER E’CMOS TECHNOLOGY — 100|oA Standby Current — Input Transition Detection on AL16V8Z — Dedicated Power-down Pin on AL16V8ZD — Input and O utput Latching During Power Down

PAL16L8 programming algorithm

Abstract: N85C220 85C220 pal16r8 programming algorithm 85C224-66 D85C220-66 intel PLD d85c220 gal 16v8 programming algorithm
Contextual Info: in te i 85C220/85C224-100, -80 AND -66 FAST REGISTERED SPEED TSU, TS0 8-MACROCELL PLDs These register optimized timing PLDs offer superior design features: • Low-Power, High-Performance Upgrade for SSI/MSI Logic and Bipolar PALs* High-Performance Systems

GAL16V8A

Abstract: 14L4 L16V GAL16V8P gal16v8a national semiconductor
Contextual Info: AL16V8A Generic Array Logic General Description The N SC E 2C M O S GAL device combines a high per­ formance C M O S process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

Contextual Info: G A L 1 6 V 8 iilL a ttice • High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 166 MHz — 4 ns Maximum from Clock Input to Data Output

Contextual Info: AL16V8B AL16V8A Lattice High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 100 MHz — 5 ns Maximum from Clock Input to Data Output — TTL Compatible 24 mA Outputs

16v8d

Abstract: 16v8b lattice 16v8d GAL16V8B-15LJ ic 556 GAL16V8 15LP 16V8B-15 gal16v8 GAL16V8D gal 16v8 programming specification
Contextual Info: AL16V8 Lattice High Performance E2CMOS PLD Generic Array Logic J Semiconductor ¡¡•à« Corporation FEA TU R ES F U N C T IO N A L B LO C K D IA G R A M • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz

al16v8d

Abstract: fuse 9 BJE
Contextual Info: Lattica GAL 16V8/883 High Performance E2CMOS PLD Generic Array Logic I Semiconductor I Corporation Functional Block Diagram Features HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 1 0 0 MHz — 6 ns Maximum from Clock Input to Data Output

Contextual Info: ATF16V8C Features • Industry Standard Architecture Emulates Many 20-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices S ns Maximum Pin-to-Pin Delay Low Power - 1 0 |iA Standby and Power Down Modes

Contextual Info: AL16V8 Lattice' High Performance E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation Functional Block Diagram Features HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output

Contextual Info: L A T T IC E s e m ic o n d u c t o r LifiE D 530^4^ lattice Q 0030D Ö OT7 G A L 1 6 V 8 /8 8 3 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 10 ns Maximum Propagation Delay

gal 16v8 programming specification

Contextual Info: GAL 16V8/883 Lattica High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 1 0 0 MHz — 6 ns Maximum from Clock Input to Data Output

gal18v8

Contextual Info: •■■ ■■■ Lattice AL16V8Z Zero Power E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E*CMOS TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 10 ns Maximum from Clock Input to Data Output

GALI6V8

Abstract: FZJ 101 16V8AS 1J44-140 16V8A FZJ 165 16H8 GAL16V8AS-12HB1 2184b 10L8
Contextual Info: ¿ T # SGS-THOMSON G A L16V 8A S E2PROM CMOS PROGRAMMABLE LOGIC DEVICE HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 10ns maximum propagation delay AL16V8AS-1 Oxxx - Fmax = 62.5MHz - 7ns max. from clock input to data output - TTL compatible 24mA outputs

RK73K2B

Abstract: TCO-700 R92-R96 computer Network Types diagram R97-R101 RK73K GAL16v8b ATM circuit diagram GRM40F104Z50 NEC media gateway
Contextual Info: USER'S MANUAL /¿PD98401 ¿¿PD98402A D o cu m e n t No. S 1 16 55E J1V 0U M 0 0 1st ed itio n D ate P ublishe d S e p te m b e r 1996 P NECCorporation 1996 P rinte d in Japan WindowsNT is a trademark of Microsoft Corporation. PC/AT is a trademark of IBM Corporation.