ts 4141 TRANSISTOR smd
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BCX41 PI N CONFIGURATI ON NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 MARKING BCX41=EK Medium Power Transistor
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BCX41
OT-23
BCX41
C-120
240310E
ts 4141 TRANSISTOR smd
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON N PN 1 = BASE SOT-23 Formed SMD Package 2 = EMITTER 3 = COLLECTOR 3 For Lead Free Parts, Device Part #
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BC846,
BC847,
BC848
OT-23
BC846
BC846A
BC846B
BC847
BC847A
BC847B
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PDF
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ts 4141 TRANSISTOR smd
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage
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PZTA44
OT-223
C-120
PZTA44Rev140606E
ts 4141 TRANSISTOR smd
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PDF
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BCX53
Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
Text: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60
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BCX51
BCX52
BCX53
BCX52
BCX51
BCX51-16
BCX53
marking AE
smd marking AA
SMD iC MARKING AG
SMD iC MARKING AE
BCX53 SMD
SMD AK
BCX52-16
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX51 Symbol Rating Unit VCBO -45 V BCX52
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BCX51
BCX52
BCX53
BCX51
BCX52
BCX51-16
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-55B TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Q101 compliant +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2
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KUK7606-55B
O-263
Tm175
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smd rgs
Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2
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KUK7607-55B
O-263
smd rgs
ld smd transistor
smd 2U
SMD Transistor nc
KUK7607-55B
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PDF
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ic 7446
Abstract: IC 7446 A data sheet ic 7446 diode 7446 IC 7446 data sheet smd rgs KUK7607-30B 7446 ic 7446 data sheet ld smd transistor
Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-30B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2
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KUK7607-30B
O-263
ic 7446
IC 7446 A
data sheet ic 7446
diode 7446
IC 7446 data sheet
smd rgs
KUK7607-30B
7446 ic
7446 data sheet
ld smd transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-75B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2
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Original
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KUK7606-75B
O-263
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40AIE TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54
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KUK7105-40AIE
O-263
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PDF
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S739
Abstract: F 739 DC smd 2U KUK7109-75AIE SMD DIODE 739
Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Q101 compliant 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2
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Original
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KUK7109-75AIE
O-263
S739
F 739 DC
smd 2U
KUK7109-75AIE
SMD DIODE 739
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54
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KUK7105-40ATE
O-263
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PDF
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smd 2U 78 diode
Abstract: smd 2U KUK7108-40AIE th362
Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7108-40AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 ESD protection 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1
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Original
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KUK7108-40AIE
O-263
smd 2U 78 diode
smd 2U
KUK7108-40AIE
th362
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PDF
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KUK7107-55AIE
Abstract: No abstract text available
Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2
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Original
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KUK7107-55AIE
O-263
KUK7107-55AIE
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54
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Original
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KUK7109-75ATE
O-263
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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Original
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OT-23
CMBT5551
C-120
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PDF
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marking al
Abstract: 200a smd 2sA1766
Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25
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Original
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2SA1766
-10mA
-200mA
-200A
marking al
200a smd
2sA1766
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PDF
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GD 743 Siemens
Abstract: No abstract text available
Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on
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OCR Scan
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TQ-220
BUZ103AL
C67078-S1357-A2
A23SbOS
Z103AL
O-220
T05155
235b05
D0fl45flfl
GD 743 Siemens
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PDF
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1b smd transistor
Abstract: 07A6 1b.1 smd transistor
Text: Temic BUD700D S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode Very low switching losses • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation • HIGH SPEED technology
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OCR Scan
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BUD700D
BUD700D
D-74025
18-Jul-97
1b smd transistor
07A6
1b.1 smd transistor
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PDF
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6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
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OCR Scan
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BUZ22SMD
q67042-s4139
DsJ14
6 pin TRANSISTOR SMD CODE PA
BUZ22
smd code buz
smd rgs
BUZ22 SMD
BUZ22SMD
Diode smd code sm
PH smd transistor PH
smd transistor A7J
TRANSISTOR SMD XD
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PDF
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sot59
Abstract: No abstract text available
Text: Philips Sem iconductors Small-signal Transistors General M O U NTIN G AND SOLDERING Screen printing M ounting m ethods This is the best high-volum e production m ethod of solder paste application. An em ulsion-coated, fine mesh screen with apertures etched in the emulsion to coincide with the
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OCR Scan
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OT323.
OT223.
sot59
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PDF
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13003 transistor SMD
Abstract: transistor smd XH d13003 TD13002 13003 NPN Transistor features TD13003 al 13003 electronic ballast 13003 transistor al 13003 c s 13003 TRANSISTOR h
Text: T e m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times
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OCR Scan
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TD13002
TD13003
TD13002
TD13003-SM
TD13003
13003 transistor SMD
transistor smd XH
d13003
13003 NPN Transistor features
al 13003
electronic ballast 13003
transistor al 13003
c s 13003 TRANSISTOR h
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PDF
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1b.1 smd transistor
Abstract: transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2
Text: Temic Som ii « h BUD616A d i h t i r s Silicon NPN High Voltage Switching Transistor Features • • • • • Simple-sWitch-Off Transistor (SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses • • • •
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OCR Scan
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BUD616A
BUD616A
D-74025
18-Jul-97
1b.1 smd transistor
transistor SMD n 03a
1B1 SMD
1B2 SMD
smd TRANSISTOR AH
transistor 1B2 SMD
SMD Transistor 1B2
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PDF
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R Y SMD TRANSISTOR
Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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OCR Scan
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BLT13
OT96-1
MAM227
OT96-1.
R Y SMD TRANSISTOR
2L smd transistor
AT 11-S-i
smd transistor 2T
SOT96-1
BLT13
D102
smd transistor nc 61
NCR100
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PDF
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