AL SMD TRANSISTOR Search Results

GD 743 Siemens

Contextual Info: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on

1b smd transistor

Abstract: 07A6 1b.1 smd transistor
Contextual Info: Temic BUD700D S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode Very low switching losses • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation • HIGH SPEED technology

6 pin TRANSISTOR SMD CODE PA

Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Contextual Info: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BCX41 PI N CONFIGURATI ON NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 MARKING BCX41=EK Medium Power Transistor

sot59

Contextual Info: Philips Sem iconductors Small-signal Transistors General M O U NTIN G AND SOLDERING Screen printing M ounting m ethods This is the best high-volum e production m ethod of solder paste application. An em ulsion-coated, fine mesh screen with apertures etched in the emulsion to coincide with the

13003 transistor SMD

Abstract: transistor smd XH d13003 TD13002 13003 NPN Transistor features TD13003 al 13003 electronic ballast 13003 transistor al 13003 c s 13003 TRANSISTOR h
Contextual Info: T e m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON N PN 1 = BASE SOT-23 Formed SMD Package 2 = EMITTER 3 = COLLECTOR 3 For Lead Free Parts, Device Part #

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage

BCX53

Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
Contextual Info: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60

Contextual Info: Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX51 Symbol Rating Unit VCBO -45 V BCX52

1b.1 smd transistor

Abstract: transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2
Contextual Info: Temic Som ii « h BUD616A d i h t i r s Silicon NPN High Voltage Switching Transistor Features • • • • • Simple-sWitch-Off Transistor (SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses • • • •

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-55B TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Q101 compliant +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

smd rgs

Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

ic 7446

Abstract: IC 7446 A data sheet ic 7446 diode 7446 IC 7446 data sheet smd rgs KUK7607-30B 7446 ic 7446 data sheet ld smd transistor
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-30B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

R Y SMD TRANSISTOR

Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
Contextual Info: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40AIE TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54

S739

Abstract: F 739 DC smd 2U KUK7109-75AIE SMD DIODE 739
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Q101 compliant 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54

smd 2U 78 diode

Abstract: smd 2U KUK7108-40AIE th362
Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7108-40AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 ESD protection 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1

KUK7107-55AIE

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

marking al

Abstract: 200a smd 2sA1766
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25