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    AL 108 TRANSISTOR Search Results

    AL 108 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AL 108 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C67078-S1327-A3

    Abstract: No abstract text available
    Text: BUZ 72 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 AL 100 V 9A 0.25 Ω TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol


    Original     		PDF O-220 C67078-S1327-A3 C67078-S1327-A3

    900mhz-1800mhz rf frequency amplifier circuit

    Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
    Text: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		PDF AN9315 HFA3046, HFA3096, HFA3127, HFA3128 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096

    Untitled

    Abstract: No abstract text available
    Text: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF


    OCR Scan     		PDF SD1457 SD1457

    c5353

    Abstract: Z11A
    Text: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY


    OCR Scan     		PDF BUZ11A BUZ11A O-220 C23A90 C53530 c5353 Z11A

    BC109

    Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.


    OCR Scan     		PDF BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors

    2SK1928

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1928 ij100A/MS 2SK1928

    2SK2314

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2314 DATA SILICON N CHANNEL MOS TYPE L 2- tt - M O S V (2SK2314) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		PDF 2SK2314 2SK2314) 100//A 2SK2314

    UFN541

    Abstract: ufn540 FN540 k96a UFN543 UFN542 FN541
    Text: TH 0G10714 t UNITRODE CORP 9347963 UNITRODE 92D CORP POWER MOSFET TRANSISTORS 100 Volt, 0.085 Ohm N-Channel FEATURES • C o m p act Plastic Package • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second B reakdow n 10714 UFN540 UFN541


    OCR Scan     		PDF 0G10714 UFN540 UFN541 UFN542 UFN543 FN543 FN540 k96a UFN543 FN541

    2SK2789

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10.3MAX.


    OCR Scan     		PDF 2SK2789 to-22qfl

    ZO 109

    Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.


    OCR Scan     		PDF BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230

    lts 542

    Abstract: UFN540 FN640
    Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		PDF UFN540 UFN541 UFN542 UFN543 lts 542 UFN540 FN640

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


    OCR Scan     		PDF BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330

    transistor itt 975

    Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz


    OCR Scan     		PDF BLX15 transistor itt 975 BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640

    Untitled

    Abstract: No abstract text available
    Text: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■


    OCR Scan     		PDF 0D30734 SC04720 T-91-20 O-240) PC-029«

    Tektronix 7603

    Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
    Text: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO


    OCR Scan     		PDF CB-19 Tektronix 7603 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature

    BLw76a

    Abstract: BLW76 BD433 74412
    Text: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		PDF hb53T31 BLw76a BLW76 BD433 74412

    4C6 toroid

    Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET


    OCR Scan     		PDF b3b72SH TP1940 20Bias 4C6 toroid UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125

    M5226

    Abstract: mitsubishi 5218 ic m5226 ic op 5218 Graphic Equalizer ic equalizer ic 5218 M5218 5218 mitsubishi block diagram graphic equalizer 5218 a op amp
    Text: MITSUBISHI SOUND PROCESSOR ICs M5226P/FP 5-ELEMENT GRAPHIC EQUALIZER IC DESCRIPTION The M 5 2 2 6 is a 5-element graphic equalizer 1C best suited to audio systems. It has a built-in 5-element resonance circuits with transistor system and an output OP amp.


    OCR Scan     		PDF M5226P/FP M5226 1000p 3900p 4700p 1800p IT270p 156Hz 412Hz mitsubishi 5218 ic m5226 ic op 5218 Graphic Equalizer ic equalizer ic 5218 M5218 5218 mitsubishi block diagram graphic equalizer 5218 a op amp

    BUZ11A

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ11A BUZ11A

    2SK2314

    Abstract: 2-10P1B
    Text: TO SHIBA 2SK2314 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2SK2314 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE 10.3MAX. APPLICATIONS


    OCR Scan     		PDF 2SK2314 428/iH, 2SK2314 2-10P1B

    tp9383

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TP9383 The RF Line V H F P o w e r T ra n sisto r • • • • • • 2 150 W — 108 MHz VHF POW ER TRANSISTOR . . . d e sign e d for use in the new generation of V H F -F M broadcast transm itters operating


    OCR Scan     		PDF TP9383 tp9383

    118-136-MHz

    Abstract: M113 SD1224-2 TRANSISTOR bu 406
    Text: m m u IRRFProduçts^ F Products ^ m -• Microsemi P ro g re s s P o w e re d b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 18936-1013 Tel: 215 631-9840 o m 00/1 O O U l Z Z Q - Z RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS


    OCR Scan     		PDF cni00y1 152MHz 175MHz SD1224-2 SD1224-2 118-136MHz 200mA 10rtiA 500mA 118-136-MHz M113 TRANSISTOR bu 406

    Untitled

    Abstract: No abstract text available
    Text: FZ 600 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 600 A 1 ms 1200 A O Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,057 °C/W 2200 W V ge 20 V Inversdiode


    OCR Scan     		PDF 0DD202fl

    ic 741c operational amplifier

    Abstract: ad520j
    Text: G E N E R A L DESCRIPTION The A N A L O G DEVICES A D 108, A D 2 0 8 and A D 3 0 8 are precision operational am plifiers fabricated on a single silicon chip. The use o f super beta transistors in the in p u t stage, along w ith improved process co n tro l, results in guaranteed in p u t


    OCR Scan     		PDF AD502J, AD503J, AD505J, AD513J, AD520J, AD530J, ic 741c operational amplifier ad520j