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    Infineon Technologies AG TLE5046ICAKERRHALA1

    IC HALL SENSOR LINEAR SSO-2
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    DigiKey TLE5046ICAKERRHALA1 Cut Tape 1,980 1
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    Avnet Americas TLE5046ICAKERRHALA1 Ammo Pack 39 Weeks 2,000
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    Mouser Electronics TLE5046ICAKERRHALA1
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    Rochester Electronics TLE5046ICAKERRHALA1 622 1
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    EBV Elektronik TLE5046ICAKERRHALA1 40 Weeks 2,000
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    Cytron Technologies MAKER-NANO

    MAKER NANO
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    DigiKey MAKER-NANO Box 411 1
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    Cytron Technologies MAKER-NANO-RP2040

    MAKER NANO PROJECTS W PI RP2040
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    DigiKey MAKER-NANO-RP2040 Box 215 1
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    Cytron Technologies MAKER-UNO

    MAKER UNO
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    DigiKey MAKER-UNO Box 205 1
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    Cytron Technologies MAKER-PI-RP2040

    MAKER PI RP2040
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    DigiKey MAKER-PI-RP2040 Box 205 1
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    Newark MAKER-PI-RP2040 Bulk 25 1
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    AKER Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C16-38.400-7-1015-R Aker Technology USA Crystal 38.400MHZ 7PF SMD Original PDF
    C16-40.000-8-1020-A-X-R Aker Technology UWB CRYSTAL, 1612, 40.0000MHZ, 8 Original PDF
    C1E-16.000-10-1010-CT Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1010-M Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1015-CT Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1015-M Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1015-X-CT Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1015-X-M Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1520-CT Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1520-M Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1520-X-R Aker Technology UWB CRYSTAL, 2016, 16.000MHZ, 10 Original PDF
    C1E-16.000-10-1530-X-CT Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-1530-X-M Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-3030-CT Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-3030-M Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-3030-X-CT Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-16.000-10-3030-X-M Aker Technology USA CRYSTAL 16.0000MHZ 10PF SMD Original PDF
    C1E-24.000-10-1015-M Aker Technology CRYSTAL 24.0000MHZ 10PF SMD Original PDF
    C1E-24.000-10-1015-X-CT Aker Technology USA CRYSTAL 24.0000MHZ 10PF SMD Original PDF
    C1E-24.000-10-1520-CT Aker Technology USA CRYSTAL 24.0000MHZ 10PF SMD Original PDF
    ...

    AKER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    0.18-um

    Abstract: free ieee paper on vlsi
    Text: Semiconductor, Published in IEDM Technical DigestFreescale 2003 session 34 paper #6 Inc. A 0.18µm 4Mb Toggling MRAM M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B.N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N.D. Rizzo,


    Original
    PDF

    421 infra

    Abstract: No abstract text available
    Text: Ausgabe O I M •d M on O L M Dleee Auegebe w u rde m it dam Softwere8yetem Fram eM aker* eretellL Thle edition wea reellzed ualng the eoftw ere ayetem F rim e M e k e r*. Herauegegeben von Siem ens AQ, ■ereleh H i lb lt t t t r , M arke tingK o m m u n ika tio n , BalanetreSe 71,


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    SFH423 421 infra PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbSa'IBI 0DBS7TS S3fi « A P X N AKER PHILIPS/DISCRETE L.7E D _ _ PMBD 28 35 PMBD 28 36 J SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PMBD2835 and 2836 consist of two diodes in a microminiature plastic envelope. The anodes are


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    PMBD2835 PMBD2835 PMBD2836 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


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    bbS3T31 QDE473T BF991 OT143 OT103 PDF

    BGY22

    Abstract: No abstract text available
    Text: i , _ N AKER P H I L I P S / D I S C R E T E ObFl SFbbS3T31 0Di3534 T-74-09^01 BGY23 BGY23A _ / V U.H.F. POWER AMPLIFIER MODULES Broadband amplifier modules primarily designed for mobile applications operating directly from 12 V


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    SFbbS3T31 0Di3534 T-74-09 BGY23 BGY23A J-74-09-01 BGY22/23 BGY22A/23A BGY22 PDF

    BY705

    Abstract: BY706 sod61 brown
    Text: I I N AKER PHILIPS/DISCRETE b=JE D bbSBTBl OGHbSlfl GOT A IAPX B Y /U 5 B Y706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EH T re c tifie r diodes in glass envelopes Intended fo r use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, th e diodes should be


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    BY706 BY705 BY706 sod61 brown PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Components for Entertainment Electronics 2 Band TV Tuner TUA 6012, TUA 6014 Mixer-Oscillator-PLL Datasheet 1998-09-01 Edition 1998-09-01 T his e d itio n w a s re a lize d using th e s o ftw a re s yste m Fram eM aker Published by Siemens AG, Bereich


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    UED10673 UED10674 P-TSSOP-28-1 22toioi H-0-10 IAICl28x GPS05867 PDF

    LM 4741

    Abstract: TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d
    Text: General Purpose Linear ICs • Comparison Table of Op Amps. M aker Panasonic NEC C ategory Single power supply 11St' Quad AN1358 //P C 3 5 8 C AN6562 /¿PC 1251C AN1358S /¿PC358C. (AN6562S) f j } \ 125KÍ AN 1324 (AN 6564) Dual Audio //P C 3 2 4 C N IJM 324D


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    AN6561 AN1358 AN6562) AN1358S 2904S 75358S 6223L 10368N I0358 BA728 LM 4741 TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d PDF

    knowles speaker

    Abstract: No abstract text available
    Text: CB-23817-000 SHT I. I 25.40 [ I .00] MAXIMUM Revision DIMENSIONS IN M I L L I M E T E R S [INCHES] C.O. # Implementation Date RELEASE LEVEL MI 0 I0 I232 9-19-06 Released SCALE: KNOWLES ELECTRONICS ITASCA, ILLINOIS U.S.A. i . i DO NOT DR. BY SCALE SPE AKER


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    CB-2381r-000 CB-23817-000 knowles speaker PDF

    SD-49225-201

    Abstract: microsd drawing 49225-0821 49225-0821 molex PK-49225-201 microsd specification 492250821 microsd connector push-push PK-49
    Text: TOLERANCE : ± 0 .0 5 [Card Center-Line] J T B * Normal DIM. : Limited * DIM. : Recommend NOTES 1. 2. 3. 4. MATERIALS: SEE TABLE T h is connector h a s been tested for com paiWity with both T ra n sF la s h and microSD cards* how ever, a s this standard is in transition so m e specifications from dfferent card m akers m ay dffer.


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    PS-49225-001 PK-49225-201 SD-49225-201 microsd drawing 49225-0821 49225-0821 molex PK-49225-201 microsd specification 492250821 microsd connector push-push PK-49 PDF

    BZX70C

    Abstract: philips zener diode c47- DIODE BZX70
    Text: T N AKER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • ^ 53=131 0022671 0 B B Z X 7 0 S E R IE S 7-H-JST R E G U L A T O R D IO D E S A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.


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    BZX70-C7V5 BZX70-C75. BZX70C philips zener diode c47- DIODE BZX70 PDF

    BFQ43

    Abstract: transistor tt 2222 on 4312 BLW31 Metallized Polyester Film Capacitor MER BB313
    Text: L ib s a 'm D02T30G flûT N AKER PHILIPS/DISCRETE V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in c!ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power


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    D02T30G BLW31 BFQ43 transistor tt 2222 on 4312 BLW31 Metallized Polyester Film Capacitor MER BB313 PDF

    B23SL

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications Intelligent Network Termination Controller 2B1Q INTC-Q PEB 8191 Version 1.1 PEF 8191 Version 1.1 D a ta s h e e t 10.97 DS 1 Edition 10.97 T his e d ition w a s realized using the so ftw a re syste m Fram eM aker . Published by Siemens AG,


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    S235b05 010720b B23SL PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications Four Channel Codec Filter with PCM- and ^-Controller Interface SICOFI 4-|xC PEB 2466 Version 1.2 Data Sheet 02.97 DS 2 Edition 02.97 This edition w as realized using the softw are system Fram eM aker . Published by Siemens AG,


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    2466-board ITS09615 PDF

    pj 0159

    Abstract: No abstract text available
    Text: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency


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    BFG505; BFG505/X; BFG505/XR BFG505 BFG505 pj 0159 PDF

    Untitled

    Abstract: No abstract text available
    Text: Edition 10.96 This edition was realized using the software system F ram eM aker’ . Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73, 81541 Miinchen S ie m e n s AG 1996. All Rights Reserved. Attention please! As fa r as patents o r o ther rights o f third par­


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SRK383S S ta n d a rd Shaft: 51. 5 7 m m Typical A p p lica tio n : =£53 H a ir C lipper H!.W! B rush Type: f ä ifti C a rb o n W a te r Pump •Ä iS End Bell: B P S Plastic C ookie M aker I # * ! I£« f Operating Nomind Ronge Voltage V V RPM A RPM


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    SRK383S SRHX383S-4040P SRK383S-327CP SRK333S- 2380P SRHK383S-19I8Ã SSHK383S PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power


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    BLW31 BFQ43 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 Q025577 730 « A P X N AKER PHILIPS/DISCRETE BSR17A b7E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA


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    bbS3T31 Q025577 BSR17A bb53S31 PDF

    transistor 3s4

    Abstract: DD 127 D TRANSISTOR BUK542 BUK542-100A BUK542-100B
    Text: N AKER PHILIPS/DISCRETE bTE D • bt.53^31 ODBDTHS 3S4 M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET_ _ GENERAL DESCRIPTION PIN CO Q PINNING -SO T186


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    BUK542-1OOA/B -SOT186 BUK542 -100A -100B transistor 3s4 DD 127 D TRANSISTOR BUK542-100A BUK542-100B PDF

    SMD SOT23 7E

    Abstract: MARKING CODE SMD IC PMBTA13 PMBTA14
    Text: • □ □25ûflcï U S ■ APX N AKER PHILIPS/DISCRETE PMBTA13 PMBTA14 b7E » N-P-N SM ALL-SIGNAL DARLINGTON TRANSISTORS N-P-N small-signal darlington transistors in a microminiature SMD envelope SOT-23 . Designed prim arily fo r preamplifier input applications requiring high input impedance.


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    PMBTA13 PMBTA14 OT-23) PMBTA63/64. OT-23. 100juA PMBTA14 SMD SOT23 7E MARKING CODE SMD IC PDF

    Untitled

    Abstract: No abstract text available
    Text: Interconnection Systems Selection Guide 8 2 7 5 0 Revised ^ § 5 C A B LE M AKER Battery Terminals Part Numbers Nominal Wire Size 6 Closed Flag Type UNIV 29253 — — UNIV 29251 NEG 6 0 8 8 17-2 — — 29250 — — Terminals and Splices CABLE M AKER Battery Terminals


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    PDF

    tc58v32ft

    Abstract: TC58V32
    Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and


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    TC58V32 TC58V32FT 528-byte, 528-byte TC58V32FT-- PDF

    tc9800

    Abstract: CP1128 TC9806 TC9802
    Text: 4. D e v e l o p m e n t F lo w a n d D e v e l o p m e n t S u p p o r t T o o ls 4.1 D e v e lo p m e n t F lo w Figure 4-1 shows the normal PLD development flow. When system and logic designs are complete, the design data m ust be input to the PLD development software.


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    TC9800/01 TC9802/03 TC9804/0S TC9806/07 TC9808/09 tc9800 CP1128 TC9806 TC9802 PDF