AJ/TRANSISTOR AJ 16 Search Results

sot69

Contextual Info: Central S e m ico n d u cto r Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR TN> CENTRAL SEMICONDUCTOR CXTS401 type is PN Pstlicon transistor manulaciurod by tho cp<tax>aJ planar process, epoxy molded in a surface mount package, destgnod for high vortjgo am pifiei applications.

Contextual Info: CSD401 CDU CSD401 NPN PLASTIC POWER TRANSISTOR Complementary CSB546 TV Vertical Deflection Output Applications °{“ dj =. AJ. L * DIM A B C E F G H J K L M N MIN MAX 16,51 10.67 4 .8 3 0.90 1,15 1.40 3,75 3,68 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,92

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

Contextual Info: C4SC8 C45C8 PNP PLASTIC POWER TRANSISTOR Complementary C44C series General Purpose Applications E i„ _ Ì ° fl AJ. DIM A 8 C D E F G H J K L M N MIN MAX 16,51 10.67 4.83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2,54 3.43 0.56 12.70 14,73 6,35 2,03 2,92 31,24

Contextual Info: MOTOROLA Order this document by MPQ2369/D SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MPQ2369 NPN Silicon Motorola Preferred Device lÿl liai Pp Pii Fp R I RI LyvJ L/ aJ NPN ÍY H rv i Lil H I LU liJ LàJ LU LiJ MAXIMUM RATINGS Rating Symbol Value

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 305 N channel Enhancement mode Avalanche-rated Type BUZ 305 * DS 800 V Aj 7.5 A D S on 1 .0 Í1 Package 1> O rdering Code TO-218 AA C67078-S3134-A2 M axim um Ratings Parameter Sym bol Continuous drain current, Tc = 31 "C

BA6196FP

Abstract: HSOP28 035101
Contextual Info: Optical disc ICs o 4-channel BLT driver for CD players aj o Q. o BA6196FP The BA6196FP is an IC designed CD players and has an internal 4-channel BTL driver, 5V regulator attached PNP transistor required , standard operational am plifier and a therm al shutdow n feature. The driver has gain adjustm ent

2SC2958

Abstract: transistor AE 2SC2959 2SA1221 F0246
Contextual Info: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >

IC-524

Abstract: l0246 ua53c PA53C T108 m561 upa53c DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEC Aj ! Ÿ ÎtC 'ê ' b -7 Com pound / \ f 7 T 9 T r a n s is to r /¿PA53C y — ' > Y > ~F U -f h NPN Silicon Epitaxial Darlington Transistor Array High Gain Amplifier /iPA53C!±, r - 'J y b > W ^ tlfz N P N affim i b 5 § è, W-MM Unit : mm) v'J= r>

upa74ha

Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

2SD1518

Abstract: 5AE0 2SD1581 C3052
Contextual Info: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^

Contextual Info: 2DI200A-020 200a S ± /< 7 — y < 7 - POWER TRANSISTOR MODULE : Features m 7 ij — ij • h F E * ''S i' • M M * $ <i •%— K rtS R In c lu d in g Free W h e e lin g D io d e H ig h D C C u rre n t G ain In s u la te d T yp e : A p p l i c a t io n s

Contextual Info: ETN36-O3O 300a s < r7 - \ ' 7 > i > X 9 :Z is z L - ) l' : Outline Drawings POWER TRANSISTOR MODULE : Features • High Current • hFE High DC Current Gain •immm Non Insulated Type : Applications High Power Switching • S H ?W iS 3f{K • DC i - • i§ liU !S

Contextual Info: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)

transistor 1Bp

Abstract: 1Bp transistor transistor 337 AJ b338
Contextual Info: 1DI300MN-120I300A '•Outline Drawings POWER TRANSISTOR MODULE ■4#^: : Fea tu res • hFE)b''fit' High DC Current Gain • r * - K rt* • s i s w a f t iiE n r jii : A p p licatio n s • ? General Purpose Inverter • Uninterruptible Power Supply • N C X fN R W Servo & Spindle Drive for NC Machine Tools

R/Detector/"Detector IC"/"CD"/9019 transistor

Contextual Info: MULTI-POWER SUPPLY u n c o R x 5 V E 0 x x x SERIES OUTLINE The RX5VE0 XXX series are multi-power supply ICs with high accuracy output voltage and detector threshold and with ultra low supply current by CMOS process. Each of these ICs consists of four voltage regulators,two volt­

Contextual Info: First Edition Mar 10, 2006 LCD Module Technical Specification Final Revision * T-51513D104J-FW-A-AJN Type No. Approved by Quality Assurance Division Checked by (ACI Engineering Division) S.Sano Prepared by (ACI Engineering Division) No. Item Page -

TRANSISTOR TCD 100 LS

Abstract: B-205
Contextual Info: 1DI75E-055 75 a W ïfé T b 'È : O utline D ra w in g s /< 7 POWER TRANSISTOR MODULE : Features • S ft fS i H igh V o lta g e • 7 U— Kl *l 3K • A S O A '7 £ tv • fêjSfe In c lu d in g Free W h e e lin g D io d e E xcellent Safe O p e ra tin g Area

AN80T07

Abstract: ic901 KD-SC900R AN80T sc900r audio output TRANSISTOR NPN
Contextual Info: KD-SC900R 4.2 AN80T07 IC901 : Regulator • Block diagram MODE1 ACC NC 6 3 5 *ASO, Peak Current Protection. *Thermal Protection (Except VDD, Comp output). Outputs Reference Voltage Pre Drive Pre Drive Pre Drive EXT Out Pre Drive ANT Out 15 14 ILM 10V 11

027SS

Abstract: 2SK442
Contextual Info: TOSHIBA {DISC RE TE /O PT O} 9097250 T O S H IB A Tí < D IS C R E T E /O P T O 99D DE I ci0cì7aS0 DGlbbaS 16635 D r - 3 ¿ /o ò iìih TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S J 1 2 3 SILICON P CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED SWITCHING APPLICATION.

MC3401

Abstract: 3900N lm39002 3301P MC3401P Tachometer circuit 3401P
Contextual Info: MC3301 LM2900 MC3401 LM3900 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 QUAD OPERATIONAL AMPLIFIERS Quad Single Supply Operational Amplifiers SILICON M ONOLITHIC INTEGRATED CIRCUIT These internally com pensated Norton operational am plifiers are designed specifically for single positive power supply applications found in industrial

Contextual Info: S5E J> SANKEN ELECTRIC CO LTD • 7 ^ 0 7 4 1 □ □OG'iS'i b32 « S A K J Silicon NPN Triple Diffused Planar ☆ High Speed Switching Transistor 2SC3832 Application Example : • Outline Drawing 1 ■ ■ ■• ■MT-25 T0220 Switching Regulator and General Purpose

Contextual Info: 2DI15OZ-12OO50A / < 7 - : Outline Drawings ;u POWER TRANSISTOR MODULE F e a tu re s • SffiME H ig h V oltage • 7 l) — ïfc-f y .1:[•' H-;. — K r tfltt • ASO In c lu d in g Free W h e e lin g D iode E xcellent Safe O p e ra tin g Area • ifâ J iïïi