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Catalog Datasheet	MFG & Type	PDF	Document Tags
M28W431 Abstract: No abstract text available Text: M28W431 4 Mbit 512Kb x8, Boot Block Low Voltage Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware	Original	PDF	M28W431 512Kb 100ns M28W431 AI02149 120ns 150ns
1N914 Abstract: M28W431 Text: M28W431 4 Mb 512K x 8, Block Erase LOW VOLTAGE FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware	Original	PDF	M28W431 100ns TSOP40 M28W431 1N914
wp 39 Abstract: AN933 M28F211 M28F410 M28F411 M28W231 Text: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.	Original	PDF	AN933 M28F2xx M28F4xx T6-U20) wp 39 AN933 M28F211 M28F410 M28F411 M28W231
1N914 Abstract: M28W431 Text: M28W431 4 Mbit 512Kb x8, Boot Block Low Voltage Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware	Original	PDF	M28W431 512Kb 100ns M28W431 TSOP40 1N914
Untitled Abstract: No abstract text available Text: SGS-THOMSON MOgtMlIgtLIgtg'ü’M D tgi_M28W431 4 Mb 512K x 8, Block Erase LOW VOLTAGE FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS	OCR Scan	PDF	M28W431 100ns TSOP40 M28W431 TSQP40