M28F102
Abstract: M29F102BB PLCC44
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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M29F102BB
PLCC44
TSOP40
M28F102
M29F102BB
PLCC44
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M29F102B
Abstract: DQ15E M28F102 PLCC44 EA13 1mbitx16
Text: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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M29F102B
M28F102
0020h
AI02131
AI02132
PLCC44
TSOP40
M29F102B
DQ15E
PLCC44
EA13
1mbitx16
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Untitled
Abstract: No abstract text available
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 35ns PROGRAMMING TIME – 8µs per Word typical
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M29F102BB
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M28F102
Abstract: M29F102BB PLCC44
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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Original
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PDF
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M29F102BB
PLCC44
TSOP40
M28F102
M29F102BB
PLCC44
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M28F102
Abstract: M29F102BB PLCC44
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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Original
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PDF
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M29F102BB
M28F102
PLCC44
TSOP40
M29F102BB
PLCC44
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st m29F102bb DATASHEET
Abstract: M28F102 M29F102BB PLCC44
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 8µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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Original
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PDF
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M29F102BB
M28F102
st m29F102bb DATASHEET
M29F102BB
PLCC44
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M28F102
Abstract: M29F102BB PLCC44 0097h
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 8µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
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Original
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PDF
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M29F102BB
M28F102
PLCC44
TSOP40
M29F102BB
PLCC44
0097h
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M28F102
Abstract: M29F102BB PLCC44
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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Original
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PDF
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M29F102BB
PLCC44
TSOP40
M28F102
M29F102BB
PLCC44
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M28F102
Abstract: M29F102B PLCC44
Text: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word – Status Register bits
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Original
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PDF
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M29F102B
M28F102
0020h
0097h
M29F102B
PLCC44
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M28F102
Abstract: M29F102BB PLCC44 st m29F102bb
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 35ns PROGRAMMING TIME – 8µs per Word typical
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Original
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PDF
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M29F102BB
M28F102
M29F102BB
PLCC44
st m29F102bb
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timer NE 555
Abstract: st m29F102bb M28F102 M29F102BB PLCC44 ICC32
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 35ns ■ PROGRAMMING TIME – 8µs per Word typical ■ 5 MEMORY BLOCKS – 1 Boot Block (Bottom Location)
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Original
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PDF
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M29F102BB
PLCC44
TSOP40
timer NE 555
st m29F102bb
M28F102
M29F102BB
PLCC44
ICC32
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Untitled
Abstract: No abstract text available
Text: £yj SGS-THOMSON D S IILI©DMIi!!lll©i M 29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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OCR Scan
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PDF
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29F102B
M28F102
M29F102B
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m29f1028
Abstract: M29F102B NE 555 SGS M28F102 PLCC44
Text: SCS-THOMSON M29F102B R}OD ®i[LI êïï®®liiDD(gS 1 Mbit (x16, Block Erase Single Supply Flash M em ory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10^is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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OCR Scan
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PDF
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M29F102B
M28F102
m29f1028
M29F102B
NE 555 SGS
PLCC44
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Untitled
Abstract: No abstract text available
Text: M29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|is typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word
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OCR Scan
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PDF
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M29F102B
M28F102
0020h
0097h
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Untitled
Abstract: No abstract text available
Text: M29F102B 1 Mbit 64Kb x16, Block Erase Single Supply Flash Memory PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10ns typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word
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OCR Scan
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PDF
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M29F102B
M28F102
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F102B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIM IN ARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical
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OCR Scan
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PDF
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M29F102B
M28F10TH
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