m628032
Abstract: SOJ28 1370E
Text: M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1 1 PSDIP28 PS DESCRIPTION
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M628032
PSDIP28
M628032
SOJ28
1370E
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02APR
Abstract: No abstract text available
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-lead
02APR
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M48T35Y
Abstract: M48T35 SOH28
Text: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS
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M48T35
M48T35Y
28-pin
M48T35:
M48T35Y:
PCDIP28
M48T35Y
M48T35
SOH28
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AN923
Abstract: M48T35 M48T35Y SOH28
Text: M48T35 M48T35Y 256 Kbit 32Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ FREQUENCY TEST OUTPUT for REAL TIME
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M48T35
M48T35Y
PCDIP28
SOH28
M48T35:
M48T35Y:
AN923
M48T35
M48T35Y
SOH28
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M48T35
Abstract: STMicroelectronics
Text: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T35
M48T35Y
M48T35:
M48T35Y:
STMicroelectronics
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M48Z35
Abstract: M48Z35Y SOH28 caphat
Text: M48Z35 M48Z35Y 256Kb 32K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage):
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M48Z35
M48Z35Y
256Kb
M48Z35:
M48Z35Y:
28-LEAD
M48Z35/35Y
M48Z35
M48Z35Y
SOH28
caphat
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M48T37V
Abstract: M48T37Y M4T32-BR12SH SOH44
Text: M48T37Y M48T37V 5.0 or 3.3V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA-LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION ■ YEAR 2000 COMPLIANT
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M48T37Y
M48T37V
M48T37Y:
M48T37V:
44-LEAD
44-pin
SOH44
M48T37V
M48T37Y
M4T32-BR12SH
SOH44
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M48T35AY
Abstract: M4T32-BR12SH1 M4T32-BR12SH6 M48T35AV M4T28-BR12SH1 SOH28 M4T28-BR12SH1 equivalent 6845
Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T35AV
M48T35AY:
M48T35AV:
PCDIP28
M48T35AY
M4T32-BR12SH1
M4T32-BR12SH6
M48T35AV
M4T28-BR12SH1
SOH28
M4T28-BR12SH1 equivalent
6845
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M48T37V
Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44
Text: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Automatic power-fail chip deselect and WRITE
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M48T37Y
M48T37V
M48T37Y:
M48T37V:
44-lead
M48T37V
M48T37Y
M4T28-BR12SH
M4T32-BR12SH
SOH44
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Untitled
Abstract: No abstract text available
Text: M48Z32V 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM PRELIMINARY DATA FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, and POWER-FAIL CONTROL CIRCUIT ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION
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M48Z32V
44-pin,
M48Z32V:
SOH44
A0-A14
A0-A14
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Untitled
Abstract: No abstract text available
Text: M48T35AY M48T35AV 256 Kbit 32Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ BATTERY LOW FLAG (BOK)
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M48T35AY
M48T35AV
M48T35AY:
M48T35AV:
SOH28
PCDIP28
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M48T36
Abstract: SOH44
Text: M48T36 CMOS 32K x 8 TIMEKEEPER SRAM PRODUCT PREVIEW INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY FREQUENCY TEST OUTPUT for REAL TIME CLOCK AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION WRITE PROTECT VOLTAGE:
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M48T36
M48T36Y:
SOH44
A0-A14
M48T36
SOH44
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M48Z35
Abstract: M48Z35Y SOH28 PCDIP28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-lead
M48Z35
M48Z35Y
SOH28
PCDIP28
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M48T37V
Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44 AI009
Text: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultralow power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Year 2000 compliant
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M48T37Y
M48T37V
M48T37Y:
M48T37V:
SOH44
44-pin
M48T37V
M48T37Y
M4T28-BR12SH
M4T32-BR12SH
SOH44
AI009
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M48T35V
Abstract: M48T35 M48T35Y SOH28
Text: M48T35 M48T35Y, M48T35Y 256 Kbit 32Kb x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME
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M48T35
M48T35Y,
M48T35Y
M48T35:
M48T35Y:
M48T35V:
28-LEAD
M48T35V
M48T35
M48T35Y
SOH28
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M4T28-BR12SH1 equivalent
Abstract: m48t35 M4T28-BR12SH1 M48T35Y SOH28 M4T28-BR12SH1 SNAPHAT
Text: M48T35 M48T35Y 256 Kbit 32Kb x8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME
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M48T35
M48T35Y
M48T35:
M48T35Y:
M4T28-BR12SH1 equivalent
m48t35
M4T28-BR12SH1
M48T35Y
SOH28
M4T28-BR12SH1 SNAPHAT
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M48Z35
Abstract: M48Z35V M48Z35Y SOH28
Text: M48Z35 M48Z35Y, M48Z35V 256 Kbit 32Kb x8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage):
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M48Z35
M48Z35Y,
M48Z35V
M48Z35:
M48Z35Y:
M48Z35V:
28-LEAD
M48Z35/35Y/35V
M48Z35
M48Z35V
M48Z35Y
SOH28
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SOH28
Abstract: M48Z35AV
Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE
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M48Z35AV
256Kbit
32Kbit
28-lead
PCDIP28
M48Z35AV:
SOH28
M48Z35AV
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M4T32-BR12SH6
Abstract: M48T35AV M48T35AY SOH28 AI016
Text: M48T35AY M48T35AV 256 Kbit 32Kb x8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
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Original
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M48T35AY
M48T35AV
PCDIP28
SOH28
M48T35AY:
M48T35AV:
M4T32-BR12SH6
M48T35AV
M48T35AY
SOH28
AI016
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M48Z35AV
Abstract: M48Z35AY SOH28
Text: M48Z35AY M48Z35AV 256 Kbit 32Kb x8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ BATTERY LOW FLAG (BOK) ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION
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M48Z35AY
M48Z35AV
M48Z35AY:
M48Z35AV:
28-LEAD
PCDIP28
SOH28
M48Z35AV
M48Z35AY
SOH28
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M48Z35
Abstract: M48Z35Y SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32Kb x8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-LEAD
PCDIP28
SOH28
M48Z35
M48Z35Y
SOH28
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M48Z35
Abstract: M48Z35Y SOH28
Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:
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M48Z35
M48Z35Y
256Kbit
32Kbit
M48Z35:
M48Z35Y:
28-lead
M48Z35
M48Z35Y
SOH28
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Untitled
Abstract: No abstract text available
Text: XZ7 SG S-TH O M SO N * IM. HD»IHI miS !0 §i M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 12,15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil
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OCR Scan
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PDF
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M628032
PSDIP28
SOJ28
M628032
in8032
SOJ28
0DbTE23
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Untitled
Abstract: No abstract text available
Text: ¿ 7* SGS-THOMSON M48T36 CMOS 32K X 8 TIMEKEEPER SRAM PRODUCT PREVIEW INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY FREQUENCYTEST OUTPUT for REALTIME CLOCK AUTOMATICPOWER-FAL CHIP DESELECTand WRITE PROTECTION WRITE PROTECT VOLTAGE:
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OCR Scan
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PDF
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M48T36
M48T36Y:
SOH44
A0-A14
7T5TS37
00bTb51
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