M28F201
Abstract: PLCC32 TSOP32
Text: M28F201 2 Mbit 256Kb x8, Bulk Erase Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical
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M28F201
256Kb
M28F201
PLCC32
TSOP32
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1N914
Abstract: M28F201 PLCC32 TSOP32
Text: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs
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M28F201
M28F201
1N914
PLCC32
TSOP32
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M28F201
Abstract: TSOP32 Package PLCC32 TSOP32
Text: M28F201 REVISION HISTORY - cont’d Date Description Stand-by Current from 10uA typ. to 5uA typ. November ’97 AC Test Circuit and Waveforms - modified PLCC mechanical data and diagram - modified TSOP mechanical data - modified August ’98 New ST Logo and Disclaimer - added
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M28F201
256Kb
PLCC32
TSOP32
AI00639C
AI00640D
M28F201
TSOP32 Package
PLCC32
TSOP32
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plcc32 pinout
Abstract: M28F201 PDIP32 PLCC32 TSOP32
Text: M28F201 M28V201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIMES – 60ns for M28F201 version – 150ns for M28V201 version LOW POWER CONSUMPTION – Standby Current: 100µA Max 32 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE
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M28F201
M28V201
M28F201
150ns
M28V201
PLCC32
PDIP32
TSOP32
plcc32 pinout
PDIP32
PLCC32
TSOP32
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M28F201
Abstract: No abstract text available
Text: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs
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PDF
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M28F201
M28F201
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1N914
Abstract: M28F201 PLCC32 TSOP32
Text: M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical
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Original
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PDF
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M28F201
M28F201
1N914
PLCC32
TSOP32
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M28F201
Abstract: No abstract text available
Text: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs
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PDF
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M28F201
M28F201
120ns
150ns
AI00638C
PLCC32
TSOP32
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M28F201
Abstract: PLCC32 TSOP32
Text: M28F201 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical
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Original
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PDF
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M28F201
M28F201
PLCC32
TSOP32
AI00639C
AI00640D
PLCC32
TSOP32
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plcc32 pinout
Abstract: M28F201 PLCC32 TSOP32
Text: M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical
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Original
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PDF
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M28F201
M28F201
plcc32 pinout
PLCC32
TSOP32
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M28F201
Abstract: PLCC32 TSOP32
Text: M28F201 2 Mbit 256Kb x8, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical
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PDF
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M28F201
256Kb
M28F201
PLCC32
TSOP32
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1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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PDF
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
memory write protect m28f512
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Untitled
Abstract: No abstract text available
Text: 5 7 . S G S -1 H 0 M S 0 N M28F201 M g [ M l[ L I( ^ [ il( g § 2 Megabit (256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10pATyp. ■ 10,000 PROGRAM/ERASE CYCLES
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M28F201
15mATyp.
10pATyp.
TSOP32
M28F201
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M28F201
Abstract: PDIP32 TSOP32
Text: M28F201 M28V201 SGS-THOMSON G l R fflQ [E Ì [ÌL I £ M © 5 ìfl3 © Ì> 2 Megabit (256K x 8, Chip Erase FLASH M EM ORY PRODUCT PREVIEW FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version LOW POWER CONSUMPTION - Standby Current: 10OnA Max
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PDF
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M28F201
M28V201
150ns
M28V201
10OnA
M28F201,
PDIP32
TSOP32
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Untitled
Abstract: No abstract text available
Text: $ 7 . M28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max
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OCR Scan
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PDF
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M28F201
M28V201
M28F201
150ns
M28V201
100nA
PDIP32
TSOP32
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