M28F102
Abstract: PLCC44
Text: M28F102 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES
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Original
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M28F102
0020h
0050h
M28F102
PLCC44
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PDF
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PLCC44 pinout
Abstract: PLCC44 M28F102 A534
Text: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical
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Original
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M28F102
0020h
0050h
M28F102
120ns
150ns
AI00629D
PLCC44
TSOP40
PLCC44 pinout
PLCC44
A534
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PDF
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M28F102
Abstract: PLCC44
Text: M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max
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Original
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M28F102
100ns
0020h
0050h
M28F102
interface100ns
120ns
150ns
AI00629D
PLCC44
PLCC44
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PDF
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M28F102
Abstract: No abstract text available
Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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Original
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M28F102
PLCC44
TSOP40
PLCC44
TSOP40
M28F102
micr11
100ns
120ns
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PDF
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M28F102
Abstract: PLCC44
Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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Original
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M28F102
PLCC44
TSOP40
M28F102
|
PDF
|
M28F102
Abstract: PLCC44
Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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Original
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M28F102
PLCC44
TSOP40
PLCC44
M28F102
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PDF
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