Untitled
Abstract: No abstract text available
Text: M41T81S Serial access real-time clock RTC with alarms Datasheet − production data Features • ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century 32 KHz crystal oscillator with integrated load capacitance (12.5 pf) which provides
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M41T81S
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SOX28
Abstract: KDS Crystals DOC KDS Crystals through hole
Text: M41ST87Y M41ST87W 5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM Features Embedded crystal • 5.0, 3.3, or 3.0 V operation ■ 400 kHz I2C bus ■ NVRAM supervisor to non-volatize external
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M41ST87Y
M41ST87W
M41ST87Y:
M41ST87W:
SOX28
KDS Crystals DOC
KDS Crystals through hole
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M41ST84W
Abstract: M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192
Text: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS FEATURES SUMMARY • 5.0 OR 3.0V OPERATING VOLTAGE I2C Figure 1. 16-pin SOIC Package ■ SERIAL INTERFACE SUPPORTS (400 KHz) BUS ■ OPTIMIZED FOR MINIMAL INTERCONNECT TO MCU
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M41ST84Y
M41ST84W
16-pin
M41ST84Y:
M41ST84W:
M41ST84W
M41ST84Y
M4TXX-BR12SH
SOH28
KDS Crystals 8.192
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M28W320BB
Abstract: M28W320BT
Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W320BT
M28W320BB
100ns
TFBGA47
M28W320BB
M28W320BT
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M27V201
Abstract: PDIP32 PLCC32 TSOP32
Text: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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M27V201
256Kb
120ns
FDIP32W
PDIP32
M27V201
PDIP32
PLCC32
TSOP32
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ST M27C256B
Abstract: M27C256B PDIP28 PDIP32 PLCC32
Text: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte
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M27C256B
M27C256Bis
FDIP28W
ST M27C256B
M27C256B
PDIP28
PDIP32
PLCC32
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M40Z300
Abstract: M40Z300W M4ZXX-BR00SH SOH28
Text: M40Z300 M40Z300W 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ CONVERTS LOW POWER SRAM INTO NVRAMs PRECISION POWER MONITORING AND POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE
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M40Z300
M40Z300W
M40Z300:
M40Z300W:
M40Z300
M40Z300W
M4ZXX-BR00SH
SOH28
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DS1642
Abstract: M48T02 M48T12
Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS
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M48T02
M48T12
24-pin
PCDIP24
M48T02:
M48T12:
DS1642
M48T02
M48T12
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quartz kds
Abstract: KDS 32. 768 KHZ crystal KDS 48 MHZ crystal oscillator KDS 8 MHZ crystal KDS Crystals 32.768 BR1225 BR1632 M41T56 SOH28 kds 2 pin crystal oscillator 4 MHz
Text: M41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM • 5V ±10% SUPPLY VOLTAGE ■ COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY ■ YEAR 2000 COMPLIANT ■ SOFTWARE CLOCK CALIBRATION ■ AUTOMATIC POWER-FAIL DETECT and SWITCH CIRCUITRY
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M41T56
500nA
150mil
SOH28
28-LEAD
quartz kds
KDS 32. 768 KHZ crystal
KDS 48 MHZ crystal oscillator
KDS 8 MHZ crystal
KDS Crystals 32.768
BR1225
BR1632
M41T56
SOH28
kds 2 pin crystal oscillator 4 MHz
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M27V101
Abstract: M27W101 PDIP32 PLCC32 TSOP32
Text: M27V101 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V101 is replaced by the M27W101 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 15mA at 5MHz ■
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M27V101
128Kb
M27V101
M27W101
PDIP32
FDIP32W
131mentioned
M27W101
PDIP32
PLCC32
TSOP32
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Untitled
Abstract: No abstract text available
Text: M27V101 1 Mbit 128Kb x 8 Low Voltage UV EPROM & OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)
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M27V101
128Kb
M27V101
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transistor 2N 5551
Abstract: P62H 2N 5551 datasheet TBA 2800
Text: M58LW064A M58LW064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA • WIDE x16/x32 DATA BUS for HIGH BANDWIDTH – M58LW064A x16 DATA BITS 86 – M58LW064B x16/x32 DATA BITS ■ SUPPLY VOLTAGE 1 – VCC = 2.7V to 3.6V Supply Voltage
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M58LW064A
M58LW064B
x16/x32
M58LW064A
M58LW064B
TSOP56
TSOP86
PQFP80
LBGA54
transistor 2N 5551
P62H
2N 5551 datasheet
TBA 2800
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M68Z128Y
Abstract: Lithium Battery
Text: M41ST85Y M41ST85W 512 bit 64b x 8 Serial Access RTC and NVRAM SUPERVISOR PRELIMINARY DATA • 3V OR 5V OPERATING VOLTAGE ■ SERIAL INTERFACE SUPPORTS I2C BUS (400 KHz) ■ NVRAMSUPERVISORfor EXTERNAL LPSRAM ■ OPTIMIZED for MINIMAL INTERCONNECT to MCU
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M41ST85Y
M41ST85W
M41ST85Y:
M41ST85W:
SOH28
M68Z128Y
Lithium Battery
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D8000-DFFF
Abstract: No abstract text available
Text: M28W160BT M28W160BB 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast
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M28W160BT
M28W160BB
100ns
TSOP48
BGA46
A0-A19
D8000-DFFF
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Untitled
Abstract: No abstract text available
Text: M41T00 SERIAL ACCESS TIMEKEEPER PRELIMINARY DATA FEATURES SUMMARY • 2.0V to 5.5V SUPPLY VOLTAGE ■ COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY ■ YEAR 2000 COMPLIANT ■ SOFTWARE CLOCK CALIBRATION ■ AUTOMATIC SWITCH-OVER and DESELECT
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M41T00
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Untitled
Abstract: No abstract text available
Text: M28W800BT M28W800BB 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = 1.65V or 2.7V for I/O Buffers – VPP = 12V for fast Program (optional) ■ ACCESS TIME
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M28W800BT
M28W800BB
512Kb
100ns
TSOP48
TFBGA45
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Untitled
Abstract: No abstract text available
Text: STTS75 Digital temperature sensor and thermal watchdog Preliminary Data Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C Accuracy from –25°C to +100°C (max) ■ Low operating current: 75µA (typ) ■ No external components required
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STTS75
150ms
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KDS 32. 768 KHZ crystal
Abstract: 20 MHz crystal KDS DT-38 KDS 20 Mhz clock datasheet quartz crystal kds with 2 pins AI00531
Text: M41T00 Serial Access TIMEKEEPER 2.0V to 5.5V SUPPLY VOLTAGE COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY YEAR 2000 COMPLIANT SOFTWARE CLOCK CALIBRATION AUTOMATIC SWITCH-OVER and DESELECT CIRCUITRY I2C BUS COMPATIBLE ULTRA-LOW BATTERY SUPPLY CURRENT
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M41T00
M41T00
KDS 32. 768 KHZ crystal
20 MHz crystal KDS
DT-38
KDS 20 Mhz clock datasheet
quartz crystal kds with 2 pins
AI00531
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KDS 40 Mhz clock datasheet
Abstract: M41T56 DT-38 KDS 32. 768 KHZ crystal KDS Crystals 32.768
Text: M41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM 5V ± 10% SUPPLY VOLTAGE COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY YEAR 2000 COMPLIANT SOFTWARE CLOCK CALIBRATION AUTOMATIC POWER-FAIL DETECT and SWITCH CIRCUITRY I2C BUS COMPATIBLE
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M41T56
500nA
M41T56
KDS 40 Mhz clock datasheet
DT-38
KDS 32. 768 KHZ crystal
KDS Crystals 32.768
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DS1220
Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
DS1220
M48Z02
M48Z12
24-Pin Plastic DIP
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M58BF008
Abstract: PQFP80 1A000-1BFFF 7N80
Text: M58BF008 8 Mbit 256Kb x32, Burst Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 5V for Program, Erase and Read – VDDQ = 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ CONFIGURABLE OPTIONS
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M58BF008
256Kb
LBGA80
PQFP80
40MHz
M58BF008
PQFP80
1A000-1BFFF
7N80
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TSOP56
Abstract: 2N 5551 datasheet A0-A21 M58LW032D
Text: M58LW032D 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME
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M58LW032D
110ns
90ns/25ns,
110ns/25ns
TSOP56
KWord/128KByte
TSOP56
2N 5551 datasheet
A0-A21
M58LW032D
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Untitled
Abstract: No abstract text available
Text: M68Z128 5V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable DATA BRIEFING ULTRA LOW DATA RETENTION CURRENT – 10nA (typical) – 1.0µA (max) OPERATION VOLTAGE: 5V ±10% 128Kb x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW VCC DATA RETENTION: 2V
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M68Z128
128Kb
M68Z128
B68Z128/811
AI00647
AI00657
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DS1225
Abstract: M48Z08 M48Z18 M4Z28-BR00SH M4Z32-BR00SH SOH28 ram DS1225
Text: M48Z08 M48Z08Y, M48Z18 5V, 64 Kbit 8Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT
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M48Z08
M48Z08Y,
M48Z18
28-pin
M48Z08:
M48Z18/Z08Y:
PCDIP28
DS1225
M48Z08
M48Z18
M4Z28-BR00SH
M4Z32-BR00SH
SOH28
ram DS1225
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