79212
Abstract: en 50022-35 SF4 relay R0337 ah56 SF4-AH40 SF4-AH20 SF4-AH 74 hc 589 SF4-AH96
Text: SF4-AH DIMENSIONS Unit: mm in SF4-AH□ Sensor Assembly dimensions Mounting drawing for the sensor on which the sensor mounting brackets and the intermediate supporting brackets are mounted. <Back mounting> <Side mounting> 30 1.181 28 1.102 26 1.024 16.9 0.665
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CE-SF4AH-10
79212
en 50022-35
SF4 relay
R0337
ah56
SF4-AH40
SF4-AH20
SF4-AH
74 hc 589
SF4-AH96
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Untitled
Abstract: No abstract text available
Text: CM150RX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 150 Amperes/1200 Volts AZ AN AH AL AL AL AL AM AL AM AM AK R AD H AM BB AQ AL AY AP DETAIL "B" A D E F G AR AH AS 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
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CM150RX-24S
Amperes/1200
Tole13
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Untitled
Abstract: No abstract text available
Text: CM100RX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 100 Amperes/1200 Volts AZ AN AH AL AL AL AL AM AL AM AM AK R AD H AM BB AQ AL AY AP DETAIL "B" A D E F G AR AH AS 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
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CM100RX-24S
Amperes/1200
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Untitled
Abstract: No abstract text available
Text: CM75RX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1200 Volts AZ AN AH AL AL AL AL AM AL AM AM AK R AD H AM BB AQ AL AY AP DETAIL "B" A D E F G AR AH AS 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
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CM75RX-24S
Amperes/1200
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ
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OT-23
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70J
C-120
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BCX70G
Abstract: BCX70H BCX70J BCX70K SMD AJ aj smd npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ
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OT-23
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70J
C-120
BCX70H
BCX70K
SMD AJ
aj smd npn
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LT6U23-AH-UDC9-S50
Abstract: LED 8400 mcd
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT6U23-AH-UDC9-S50 HIGH POWER AUTOMATIVE LED ATTENTION OBSERVE PRECAUTION
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LT6U23-AH-UDC9-S50
LT6U23-AH-UDC9-S50
LED 8400 mcd
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LT6V23-AH-UDC9-S50
Abstract: No abstract text available
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT6V23-AH-UDC9-S50 HIGH POWER AUTOMATIVE LED ATTENTION OBSERVE PRECAUTION
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LT6V23-AH-UDC9-S50
LT6V23-AH-UDC9-S50
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LT6V13-AH-UJF7
Abstract: LT6V13-AH-UJE1
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT6V13-AH-UJF7 HIGH POWER AUTOMATIVE LED Approved by Checked by
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LT6V13-AH-UJF7
LT6V13-AH-UJE1
LT6V13-AH-UJF7
LT6V13-AH-UJE1
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LT8V33-AH-ULE1-S50
Abstract: No abstract text available
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT8V33-AH-ULE1-S50 HIGH POWER AUTOMATIVE LED ATTENTION OBSERVE PRECAUTION
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LT8V33-AH-ULE1-S50
LT8V33-AH-ULE1-S50
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LT8V23-AH-UDC9-S50
Abstract: No abstract text available
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT8V23-AH-UDC9-S50 HIGH POWER AUTOMATIVE LED ATTENTION OBSERVE PRECAUTION
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LT8V23-AH-UDC9-S50
LT8V23-AH-UDC9-S50
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LT6U33-AH-ULE1-S50
Abstract: ledtech
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT6U33-AH-ULE1-S50 HIGH POWER AUTOMATIVE LED ATTENTION OBSERVE PRECAUTION
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LT6U33-AH-ULE1-S50
LT6U33-AH-ULE1-S50
ledtech
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Untitled
Abstract: No abstract text available
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT9F23-AH-UDC9-S50 HIGH POWER AUTOMATIVE LED ATTENTION OBSERVE PRECAUTION
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LT9F23-AH-UDC9-S50
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LT8V13-AH-UJF7
Abstract: No abstract text available
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT8V13-AH-UJF7 HIGH POWER AUTOMATIVE LED Approved by Checked by
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LT8V13-AH-UJF7
LT8V13-AH-UJF7
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LT6U13-AH-UJF7
Abstract: No abstract text available
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT6U13-AH-UJF7 HIGH POWER AUTOMATIVE LED Approved by Checked by
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LT6U13-AH-UJF7
LT6U13-AH-UJF7
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LT6V33-AH-ULE1-S50
Abstract: No abstract text available
Text: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT6V33-AH-ULE1-S50 HIGH POWER AUTOMATIVE LED ATTENTION OBSERVE PRECAUTION
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LT6V33-AH-ULE1-S50
LT6V33-AH-ULE1-S50
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Untitled
Abstract: No abstract text available
Text: The 8051 Family PART TECHNOLOGY ON-CHIP PROGRAM MEMORY 8051 AH 8031 AH 8751H Am9761H 80C51 80C31 NMOS NMOS NMOS NMOS CMOS CMOS 4K — ROM NONE 4K — EPROM 8K — EPROM 4K — ROM NONE ON-CHIP DATA MEMORY 128 128 128 128 128 128 THE MAJOR FEATURES OF THE 8051
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16-bit
8751H
Am9761H
80C51
80C31
8051AH
LS001422
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Untitled
Abstract: No abstract text available
Text: SEC / aH *0 E V IC E / SILICON TRANSISTOR _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _2 S C 1 6 2 2 A AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS
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2SC1622A
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LC 300-S
Abstract: MMDT4401
Text: MMDT4401 ÍRANSYS ELECTRONICS LIMITED DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features_ Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 -H Ah- RR e KXX Mechanical Data_
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MMDT4401
OT-363,
MIL-STD-202,
OT-363
MMDT4401
100MHz
150mA,
LC 300-S
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Untitled
Abstract: No abstract text available
Text: BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistore Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE
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BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
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BCX70G
Abstract: BCX70H BCX70J BCX70K
Text: BCX70G BCX70H BCX70J BCX70K CDIL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = 9ASE 2 = EMITTER
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OCR Scan
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PDF
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BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
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Untitled
Abstract: No abstract text available
Text: CDIIL BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = QASE
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OCR Scan
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PDF
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BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70J
23A33T4
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2n7000
Abstract: No abstract text available
Text: 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current LOW R ds hM b AH TO-92 ON Fast Switching Speed
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OCR Scan
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2N7000
MIL-STD-202,
DS11304
2N7000
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LM114
Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100
Text: ïïM M m \ll LM114IH, LM114A/AH Dual NPN Monolithic Transistor GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transis tors fabricated on a single silicon substrate. This m onolithic structure makes possible extrem ely tig ht parameter matching
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LM114/H,
LM114A/AH
300MHz
22MHz
10/iA
l-125
LM114
LM114A,
LM114D
Monolithic Transistor Pair
LM114A
LM114AH
LM114H
alc100
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