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A114B Abstract: AGERE AGR26180E AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A Text: Preliminary Product Brief April 2004 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	PDF	AGR26180E AGR26180E AGR26180EU AGR26180EF PB04-082RFPP PB04-017RFPP) A114B AGERE AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A
AGR26180EF Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	PDF	AGR26180EF AGR26180EF DS04-112RFPP J500 JESD22-C101A j78 transistor j78 transistor equivalent
Untitled Abstract: No abstract text available Text: Preliminary Product Brief December 2003 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	PDF	AGR26180E AGR26180EU AGR26180EF AGR26180EUg PB04-017RFPP
mmds Abstract: AGR26180EF J500 JESD22-C101A Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	PDF	AGR26180EF AGR26180EF AGR19K180U AGR26180XF 12-digit mmds J500 JESD22-C101A