AGR18125EF Search Results

AGR18125EF Price and Stock

Filter by Manufacturer


Advanced Semiconductor Inc AGR18125EF RF MOSFET Transistors 1.8-1.88GHz 125Watt Gain 13.5dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR18125EF					1 - 10 $90.38 100 $86.65 1000 $86.65 10000 $86.65	Get Quote

AGR18125EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR18125EF		Agere Systems	FET Transistor, 125W, 1.805GHz-1.880GHz, LDMOS RF Power Transistor		Original	PDF
AGR18125EF		Agere Systems	125 W, 1.805 GHz - 1.880 GHz, LDMOS RF Power Transistor		Original	PDF

AGR18125EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AGR18125EF Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A Text: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E PB04-078RFPP PB04-012RFPP) AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
J293 Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A
178rf Abstract: No abstract text available Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E PB03-178RFPP 178rf
AGERE Abstract: AGR18125E AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A Text: Product Brief November 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E PB04-012RFPP PB03-178RFPP) AGERE AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Untitled Abstract: No abstract text available Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E a712-4106) PB03-178RFPP