Untitled
Abstract: No abstract text available
Text: TC55VZM208AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM208AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed,
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Original
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TC55VZM208AJJI/AFTI08
288-WORD
TC55VZM208AJJI/AFTI
304-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TC55VZM208AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM208AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed,
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Original
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TC55VZM208AJJI/AFTI08
288-WORD
TC55VZM208AJJI/AFTI
304-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-70,-70L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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OCR Scan
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TC55V1001
AFI/AFTI/ATRI/ASTI/ASRI-70
072-WORD
TC55V1001AFI/AFTI/ATRI/ASTI/ASRI
576-bit
S-TD-81E
32-P-0820-0
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PDF
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A10C
Abstract: A15C TC554001 053g
Text: T O S H IB A TC554001 AFI/AFTI/ATRI-70#-85#-10#-70L#-85L#-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as
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OCR Scan
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AFI/AFTI/ATRI-70
TC554001AFI/AFTI/ATRI
304-bit
10mA/MHz
OP32-P-525-1
32-P-400-1
35MAX
A10C
A15C
TC554001
053g
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PDF
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SOJ44-P-400-1
Abstract: No abstract text available
Text: TC55VZM216AJJI/AFTI08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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Original
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TC55VZM216AJJI/AFTI08
144-WORD
16-BIT
TC55VZM216AJJI/AFTI
304-bit
SOJ44-P-400-1
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC554001AFI/AFTI/ATRI-70,-85,-10,-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
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OCR Scan
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TC554001AFI/AFTI/ATRI-70
TC554001AFI/AFTI/ATRI
304-bit
10mA/MHz
OP32-P-525-1
32-P-400-1
35MAX
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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OCR Scan
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TC55V1001
AFI/AFTI/ATRI/ASTI/ASRI-85
072-WORD
TC55V1001AFI/AFTI/ATRI/ASTI/ASRI
576-bit
32-P-0820-0
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PDF
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Untitled
Abstract: No abstract text available
Text: NHD-240128WG-AFTI-VZ#-C5 Graphic Liquid Crystal Display Module AFTIVZ#C5- Newhaven Display 240 x 128 pixels Display Type: Graphic Model White CCFL Backlight FSTN - Transmissive, 6:00 view, Wide Temperature (-20°C ~+70°C) Built-in Negative Voltage
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Original
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NHD-240128WG-AFTI-VZ
NHD240128WGAFTIVZ
200hrs
96hrs
30min
30min
10-55Hz
100pF
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC55V1001AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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OCR Scan
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TC55V1001
AFI/AFTI/ATRI/ASTI/ASRI-85
072-WORD
TC55V1001AFI/AFTI/ATRI/ASTI/ASRI
576-bit
32-P-0820-0
TC55V1Q01AFI/AFTI/ATRI/ASTI/ASRI-85
32-P-0
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-70,-70L TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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OCR Scan
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TC55V1001
AFI/AFTI/ATRI/ASTI/ASRI-70
072-WC
TC55V1001AFI/AFTI/ATRI/ASTI/ASRI
576-bit
S-TD-81E
AFl/AFTI/ATRI/ASTI/ASRI-70
32-P-0820-0
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PDF
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A10C
Abstract: A15C A17C TC554001
Text: TO SH IB A TC554001 AFI/AFTI/ATRI-70V,-85V,-10V T O SH IB A M O S DIG ITA L INTEGRATED CIRCUIT SILICON GATE C M O S 524.288 W O R DS x 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as
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OCR Scan
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TC554001
AFI/AFTI/ATRI-70V
TC554001AFI/AFTI/ATRI
304-bit
10mA/MHz
OP32-P-525-1
775TYP
A10C
A15C
A17C
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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OCR Scan
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TC55V1001
AFI/AFTI/ATRI/ASTI/ASRI-85
TC55V1001AFI/AFTI/ATRI/ASTI/ASRI
576-bit
select-85
32-P-0820-0
32-P-0
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PDF
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s3 86c* -toshiba
Abstract: No abstract text available
Text: H3S- TOSHIBA 4Mbit Static RAM AFTI/AFTI-L Data Sheet TOSHIBA AFTI-70t-85>-10,-70Lf-85L>-10L T O SH IBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 262,144-W O R D BY 16-BIT STATIC RAM DESCRIPTION The AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16
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OCR Scan
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TC554161AFTI/AFTI-L
16-BIT
TC554161AFTI-70t-85>
-70Lf-85L>
TC554161AFTI
304-bit
TC554161AFTI-70
62MAX
s3 86c* -toshiba
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS D RA WI NG CONTAINS INFORMATION THAT IS PROPRIETARY TO M OL E X S PTE LTD AND S H OU LD NOT BE USED WI THOU T WRITTEN PERMISSION Z E-rX M Z£0)O I0-N 3 " È^ì#2iìe*>aiàd4Q>K^ acp'îQî&aftiwSÊifcJâa) (* )
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OCR Scan
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PDF
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Zener diode 81c
Abstract: No abstract text available
Text: S G ^ T H O M S O N Ü7E D 81 C 19 091 - « 7 ^ 5 3 7 O O IS ^ S D O I L 3 t0 t ? L-L-aftisfe^á^siuíS* P R E L IM IN A R Y D A T A TRANSIENT VOLTAGE/CURRENT SUPPRESSOR caused by lightning, induction from power lines, etc. The L3101 characteristic, that is its firing voltage
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OCR Scan
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L3101
Zener diode 81c
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PDF
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Untitled
Abstract: No abstract text available
Text: TC55VZM208AJJI/AFTI08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM208AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed,
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Original
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TC55VZM208AJJI/AFTI08
288-WORD
TC55VZM208AJJI/AFTI
304-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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OCR Scan
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TC55V1001
AFI/AFTI/ATRI/ASTI/ASRI-85
TC55V1001AFI/AFTI/ATRI/ASTI/ASRI
576-bit
selec34
32-P-0820-0
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PDF
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Untitled
Abstract: No abstract text available
Text: TEXAS INSTR LOGIC 2SE D aftiTaa oôabS42 3 SN54HC153, SN74HC153 DUAL 4-LINE TO M IN E DATA SELECTORS/MULTIPLEXERS D2684, DECEMBER 1982-REVISED SEPTEMBER 1987 • Permits Multiplexing from N Lines to 1 Line • Performs Parallel-to-Serlal Conversion • Strobe (Enable) Line Provided for Cascading
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OCR Scan
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abS42
SN54HC153,
SN74HC153
D2684,
1982-REVISED
300-mil
SN74H
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PDF
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Untitled
Abstract: No abstract text available
Text: TC554001AFI/AFTI/ATRI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a
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Original
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TC554001AFI/AFTI/ATRI-70
288-WORD
TC554001AFI/AFTI/ATRI
304-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NHD-240128WG-AFTI-VZ#-C5 Graphic Liquid Crystal Display Module AFTIVZ#C5- Newhaven Display 240 x 128 pixels Display Type: Graphic Model White CCFL Backlight FSTN - Transmissive, 6:00 view, Wide Temperature (-20°C ~+70°C) Built-in Negative Voltage
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Original
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NHD-240128WG-AFTI-VZ
NHD240128WGAFTIVZ
200hrs
96hrs
30min
10-55Hz
100pF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TC55VZM216AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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Original
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TC55VZM216AJJI/AFTI08
144-WORD
16-BIT
TC55VZM216AJJI/AFTI
304-bit
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PDF
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TC554001AFI
Abstract: A15C TC554001
Text: TOSHIBA TC554001 AFI/AFTI/ATRI-70#-85#-10#-70L#-85L#-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
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OCR Scan
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TC554001
AFI/AFTI/ATRI-70
TC554001AFI/AFTI/ATRI
304-bit
10mA/MHz
OP32-P-525-1
TC554001AFI
A15C
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PDF
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graphic LCD screen 240128 T6963C
Abstract: LCD 240*128 T6963C t6963c Commands and Instruction set 240x128 T6963C lcd 240128 DATA ed 240x128 lcd 240128 NHD240128WGAFTIVZ T6963C 240128
Text: User’s Guide NHD-240128WG-AFTI-VZ#-C5 LCM Liquid Crystal Display Graphic Module RoHS Compliant AFTIVZ#C5- Newhaven Display 240 x 128 pixels W= Factory Line G= Display Mode: Graphic Model/Serial Number White CCFL B/L FSTN-(negative) Transmissive, 6:00 View, Wide Temperature (-20 ~ +70c)
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Original
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NHD-240128WG-AFTI-VZ
NHD240128WGAFTIVZ
graphic LCD screen 240128 T6963C
LCD 240*128 T6963C
t6963c Commands and Instruction set
240x128 T6963C
lcd 240128 DATA
ed 240x128
lcd 240128
T6963C
240128
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PDF
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Untitled
Abstract: No abstract text available
Text: TC55VZM216AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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Original
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TC55VZM216AJJI/AFTI08
144-WORD
16-BIT
TC55VZM216AJJI/AFTI
304-bit
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PDF
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