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    AFT27S006NT1 Price and Stock

    NXP Semiconductors AFT27S006NT1

    RF MOSFET LDMOS 28V PLD-1.5W
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    DigiKey AFT27S006NT1 Cut Tape 1,097 1
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    AFT27S006NT1 Digi-Reel 1,097 1
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    • 10 $9.592
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    AFT27S006NT1 Reel 1,000
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    Avnet Americas AFT27S006NT1 Reel 10 Weeks 1,000
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    Mouser Electronics AFT27S006NT1 938
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    Verical AFT27S006NT1 5,000 41
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    AFT27S006NT1 2,182 5
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    AFT27S006NT1 2,000 41
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    AFT27S006NT1 1,950 41
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    AFT27S006NT1 1,139 1
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    AFT27S006NT1 1,000 41
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    AFT27S006NT1 1,000 5
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    Arrow Electronics AFT27S006NT1 Cut Strips 1,139 10 Weeks 1
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    Newark AFT27S006NT1 Cut Tape 502 1
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    Future Electronics AFT27S006NT1 Reel 10 Weeks 1,000
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    Rochester Electronics AFT27S006NT1 9,950 1
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    Richardson RFPD AFT27S006NT1 2,182 1
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    EBV Elektronik AFT27S006NT1 2,000 12 Weeks 1,000
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    Freescale Semiconductor AFT27S006NT1

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    Quest Components AFT27S006NT1 800
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    • 100 $12.4117
    • 1000 $8.2745
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    AFT27S006NT1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT27S006NT1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, FET RF NCH 65V 2690MHZ PLD1.5W Original PDF

    AFT27S006NT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1