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    AF SOT 23 Search Results

    AF SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    AF SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC104

    Abstract: No abstract text available
    Text: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5


    Original     		PDF OT-23-5 Q62702- Dec-04-1996 IC104

    100MHZ

    Abstract: BC817-16 BC817-25 BC817-40
    Text: BC817-16 BC817-25 BC817-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic


    Original     		PDF BC817-16 BC817-25 BC817-40 OT-23 OT-23 MIL-STD-202E 100MHZ BC817-16 BC817-25 BC817-40

    BC857

    Abstract: BC858 BC856 BC856B BC857 Plastic BC857C BC856A BC857A BC857B BC858A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR BC857A, B,C BC858A, B,C PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER


    Original     		PDF OT-23 BC856A BC857A, BC858A, OT-23 BC856 BC857 BC858 BC857 BC858 BC856 BC856B BC857 Plastic BC857C BC857A BC857B BC858A

    DKs smd marking

    Abstract: marking AF BCX42 high voltage swiching transistors marking AF SOT
    Text: Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1


    Original     		PDF BCX42 OT-23 DKs smd marking marking AF BCX42 high voltage swiching transistors marking AF SOT

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage


    Original     		PDF OT-23 BC818-16 BC818-25 OT-23 BC818-40 100mA 300mA 500mA, 500mA

    bc818

    Abstract: BC818-16 BC818-25 BC818-40
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage


    Original     		PDF OT-23 BC818-16 BC818-25 OT-23 BC818-40 100mA 300mA 500mA, 500mA bc818 BC818-16 BC818-25

    bc847

    Abstract: BC848 BC846 BC846A BC847B-1F BC847 Plastic BC847C BC848C BC846B BC847A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A,B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications


    Original     		PDF OT-23 BC846A BC847A, BC848A, OT-23 BC846 BC847 BC848 bc847 BC848 BC846 BC847B-1F BC847 Plastic BC847C BC848C BC846B BC847A

    6E SMD

    Abstract: marking AF SOT-23 6F BC818A
    Text: Transistors SMD Type NPN Silicon AF Transistors KC818A BC818A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High collector current. 1 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High current gain. +0.05


    Original     		PDF KC818A BC818A) OT-23 KC818A-16 KC818A-25 KC818A-40 6E SMD marking AF SOT-23 6F BC818A

    BC859

    Abstract: No abstract text available
    Text: BC859 SOT-23 Silicon Planar Epitaxial Transistors TRANSISTORS PNP FEATURES * Ideally suited for automatic insertion * For switching and AF amplifier applications SOT-23 COLLECTOR MECHANICAL DATA * * * * 3 BASE Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed


    Original     		PDF BC859 OT-23 OT-23 MIL-STD-202E BC859

    BC817A

    Abstract: smd marking 6c marking 6A marking AF smd marking 6b
    Text: Transistors SMD Type NPN Silicon AF Transistors KC817A BC817A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05


    Original     		PDF KC817A BC817A) OT-23 KC817A-16 KC817A-40 KC817A-25 BC817A smd marking 6c marking 6A marking AF smd marking 6b

    smd marking 5G

    Abstract: MARKING 5E marking AF
    Text: Transistors SMD Type PNP Silicon AF Transistors KC808A BC808A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05


    Original     		PDF KC808A BC808A) OT-23 KC808A-16 KC808A-25 KC808A-40 smd marking 5G MARKING 5E marking AF

    smd 9FB

    Abstract: marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40
    Text: Transistors SMD Type PNP Silicon AF Transistors KC807 BC807 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


    Original     		PDF KC807 BC807) OT-23 300mA KC807-16 KC807-25 KC807-40 smd 9FB marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40

    EHs SOT-23

    Abstract: EFs SOT-23
    Text: BCW 65, BCW 66 NPN Silicon AF Transistor 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP 2 1 Type Marking Pin Configuration BCW 65A EAs 1=B 2=E 3=C SOT-23 BCW 65B


    Original     		PDF OT-23 VPS05161 Sep-30-1999 EHP00394 EHP00395 EHs SOT-23 EFs SOT-23

    mmbt9015

    Abstract: MMBT9014B MMBT9014C MMBT9014D
    Text: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9014BLT1 MMBT9014CLT1 MMBT9014DLT1 MMBT9015BLT1, MMBT9015CLT1 MMBT9015DLT1 OT-23 100mA mmbt9015 MMBT9014B MMBT9014C MMBT9014D

    MMBT9015DLT1

    Abstract: MMBT*9015c MMBT9015B MMBT9015C MMBT9014C
    Text: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9015BLT1 MMBT9015CLT1 MMBT9015DLT1 MMBT9014BLT1, MMBT9014CLT1 MMBT9014DLT1 OT-23 100mA, MMBT9015DLT1 MMBT*9015c MMBT9015B MMBT9015C MMBT9014C

    MMBT9018G

    Abstract: MMBT9018H
    Text: MMBT9018GLT1 / MMBT9018HLT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO


    Original     		PDF MMBT9018GLT1 MMBT9018HLT1 OT-23 MMBT9018G MMBT9018H

    MMBT*9015c

    Abstract: MMBT9015C MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015
    Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9015B MMBT9015C MMBT9015D MMBT9014B, MMBT9014C MMBT9014D OT-23 100mA, MMBT*9015c MMBT9014B MMBT9015

    MMBT9018G

    Abstract: MMBT9018H
    Text: MMBT9018GLT1 / MMBT9018HLT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO


    Original     		PDF MMBT9018GLT1 MMBT9018HLT1 OT-23 MMBT9018G MMBT9018H

    BC857

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. BC857 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Pinning


    Original     		PDF BC857 OT-23 -10mA, -100mA, BC857

    MMBT*9014d

    Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015C
    Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9015B MMBT9015C MMBT9015D MMBT9014B, MMBT9014C MMBT9014D OT-23 100mA, MMBT*9014d MMBT9014B

    MMBT9014C

    Abstract: MMBT*9014d MMBT9014B MMBT9015B MMBT9015C MMBT9014D
    Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9014B MMBT9014C MMBT9014D MMBT9015B, MMBT9015C MMBT9015D OT-23 100mA MMBT*9014d MMBT9015B MMBT9014D

    MMBT9014C

    Abstract: MMBT9014D MMBT9014B MMBT9015B MMBT9015C
    Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9014B MMBT9014C MMBT9014D MMBT9015B, MMBT9015C MMBT9015D OT-23 100mA MMBT9014D MMBT9015B

    BC847

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. BC847 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 .020 0.50


    Original     		PDF BC847 OT-23 100mA, BC847

    BC807

    Abstract: BC817-16 BC817-16-7 BC817-25 BC817-40 J-STD-020A
    Text: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807 SOT-23


    Original     		PDF BC817-16 BC807) OT-23 OT-23, J-STD-020A MIL-STD-202, BC817-xx-7 3000/Tape com/datasheets/ap02007 BC807 BC817-16-7 BC817-25 BC817-40 J-STD-020A