Low Drop Out Regulators
Abstract: 7585C DIL 16
Text: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic
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UCC2930-3\UCC3930-3
UCC2930-3\UCC3930-3
Low Drop Out Regulators
7585C
DIL 16
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toshiba p300
Abstract: kd qa
Text: INTEGRATED T O SH IB A 8 -B IT CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74ACT299P/F/FW DATA SILICON MONOLITHIC PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR The TC74ACT299 is an advanced high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate and
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TC74ACT299P/F/FW
TC74ACT299
20PIN
20PIN
300mil
685TYP
toshiba p300
kd qa
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TC74AC373
Abstract: No abstract text available
Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC37BP/F/FW/FS DATA SILICON MONOLITHIC OCTAL D -TYP E LATCH WITH 3 -STATE OUTPUT The TC74AC373 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon
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TC74AC37BP/F/FW/FS
TC74AC373
20PIN
300mil
685TYP
20PIN
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74ALS05
Abstract: diode sy 106 diode sy 180 10
Text: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.
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TC74VHC05F/FN/FT
TC74VHC05F,
TC74VHC05FN,
TC74VHC05FT
TC74VHC05
TC74VHC04,
74ALS05
diode sy 106
diode sy 180 10
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Untitled
Abstract: No abstract text available
Text: TOSHIBA UTOPIA Multiplexer/ De-Multiplexer 1 9 9 T C 3 5 8 8 5 T B R e v i s i o n DAT A TOSHIBA AMERICA ELECTRONIC COMPONENTS, I NC 1. 1 BOOK 9 TO SH IB A Preliminary TC35885TB The contents of this technical data are su bject to change w itho ut advance notice due to
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TC35885TB
256TBGA
T-BGA256-2727-1
Af-Phy-0039
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A9RV
Abstract: 5s a315 A327
Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514900AJLL-70/80
TC514900AJLL
TC514900AJLI/70/80
TC514900AJLL70/80
A9RV
5s a315
A327
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PDF
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UFNF430
Abstract: diode ed 2437 UFNF432
Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.
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UFNF430
UFNF431
UFNF432
UFNF433
UFNF430
diode ed 2437
UFNF432
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K2545
Abstract: cx 2808 tlc2652 TLC2652A D3157
Text: TLC2652, TLC2652A Advanced LinCMOS1 PRECISION CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS D3157, SEPTEMBER 1988 0008, JG, or P PACKAGE Extremely Low Offset Voltage . . 1 nV Max TOP VIEW Extremely Low Change in Offset Voltage with Temperature . . . 0.003nV/°CTyp
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TLC2652,
TLC2652A
D3157,
003nV/
TLC2652
K2545
cx 2808
D3157
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UC494
Abstract: No abstract text available
Text: SSSSSÄ UNITRODE UC494A UC495A UC494AC UC495AC Advanced Regulating Pulse Width Modulators FEATURES • Dual u n com m itted 40V, 2 0 0 m A output tran sistors » 1% a ccu rate 5V reference • Dual error am p lifie rs • W ide range, v a riab le dead tim e
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UC494A
UC495A
UC494AC
UC495AC
C495A:
UC495A)
UC494
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260-pin
Abstract: No abstract text available
Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.
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TC55V1864J/FT-10/12/15
TheTC55V1864J/FT
TC55V1864J/FT
TC55V1864J/
B-143
260-pin
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AC5947N
Abstract: HDSP-6508 AC5947NF 75498 AC5947 DIGITAL IC 7493 ic 7493 supply voltage power supply current 12 pin 4 digit 7 segment display SN7694N
Text: ADVANCED C IR C U IT S PRELIM INARY AC5947N 18-SEGMENT D IS P L A Y DRIVER 12/11/79 N O R N F D U AL-IN-LINE PACKAGE TO P VIEW On chip latches for the A S C II input data ’C Output enable for display blanking and duty cycle dimming u *[ »C •c ’[
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AC5947N
18-SEGMENT
ASC11
e00-inch
24-mm)
400-inch
16-mm)
AC5947NF.
HDSP-6508
AC5947NF
75498
AC5947
DIGITAL IC 7493
ic 7493 supply voltage power supply current
12 pin 4 digit 7 segment display
SN7694N
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ic 6283 circuit diagram
Abstract: amplifier ic 6283 amplifier circuit using 6283 d 6283 ic
Text: IN T E G R A T E D C IR C U I T S UC1853 UC2853 UC3853 U N IT R Q D E ADVANCED INFORMATION High Power Factor Preregulator Complete 8-pin Power Factor Solution Reduced External Components RMS Line Voltage Compensation Precision Multiplier/Squarer/Divider Internal 75kHz
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UC1853
UC2853
UC3853
75kHz
UC1854,
ic 6283 circuit diagram
amplifier ic 6283
amplifier circuit using 6283
d 6283 ic
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74LVX4245FS Dual Supply Octal B u s Transceiver The TC74LVX4245 is a dual supply, advanced high speed C M O S O CTAL B U S T R A N SC E IV E R fabricated with silicon gate C M O S technology. Designed for use as an interface between a 5V bus and a
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TC74LVX4245FS
TC74LVX4245
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7WH74FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH74FU D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7WH74FU is an advanced high speed CMOS D-FLIP FLOP fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent
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TC7WH74FU
TC7WH74FU
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TC514170BJ-80
Abstract: tc514170 TC514170BJ80
Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques
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TC514170BJ-70/80
TC514170BJ
TC514170BJ-80
tc514170
TC514170BJ80
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PDF
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Untitled
Abstract: No abstract text available
Text: TEXAS INSTR -C LI N/I NTFO *ìl 8961724 TEXAS INSTR LIN /IN TFC dË J 5 ^ 1 7 2 4 007 5115 2 91D ADVANCE INFORMATION 75912 SN7S609 DUAL FLUX-REGULATING ACTUATOR T -5 2 -1 3 -4 5 2.6-A Current Capability per Channel K V SINGLE-IN-LINE PACKAGE (TOP VIEW)
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SN7S609
15-Pin
SN75609
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ufn440
Abstract: UFN441
Text: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.
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UFN440
UFN441
UFN442
UFN443
UFN441
UFN442
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TC5117800bnt-60
Abstract: TC5117800B
Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117800BNJ/BNT-60/70
TC5117800BNT
TC5117800bnt-60
TC5117800B
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UFN432
Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.
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UFN430
UFN431
UFN432
UFN433
UFN430
UFN431
UFN432
mosfet UFN432
UFN 432
UFN433
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PDF
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TC160G
Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Text: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate
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TC170C
250ps
TC160G
toshiba LGA Nand
TC170C14
TC26SC
TC170C1
TC170C29
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SH04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH04F, TC7SH04FU INVERTER The TC7SH04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves The high speed operation similar to equivalent
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TC7SH04F/FU
TC7SH04F,
TC7SH04FU
TC7SH04
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ac201
Abstract: ac199
Text: TC74ACT175P/F/FN QUAD D-TYPE FLIP FLOP WITH CLEAR The TC74ACT17S is an advanced high speed CMOS QUAD D -T Y P E F L IP -F L O P fabricated with silicon gate and double-layer m etal w iring CMOS technology. It achieves the high speed operation sim ilar to equivalent
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TC74ACT175P/F/FN
TC74ACT17S
AC-201
ac201
ac199
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PDF
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TLCS-90
Abstract: No abstract text available
Text: TO SH IBA TMP90C846 CMOS 8-BIT MICROCONTROLLER TMP90C846F 1. OUTLINE AND CHARACTERISTICS The TMP90C846 is an advanced 8-bit microcontroller developed for application in the control of HDD/FDD high-speed mechanisms. The built-in functions include a high speed A/D converter minimum sampling rate: 400ns @ 10MHz with an external start
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TMP90C846
TMP90C846F
TMP90C846
400ns
10MHz)
44-pin
QFP44-P-1414D)
TMP90C846.
TLCS-90
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PDF
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2N6797
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching
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2N6797
2N6798
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