MX29L1611
Abstract: No abstract text available
Text: Introduction PRELIMINARY MX29L1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 50ns
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MX29L1611
16M-BIT
100ns
200ms
MX29L1611
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Untitled
Abstract: No abstract text available
Text: INDEX PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 30ns Page access depth: 16 bytes/8 words, page address
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MX29L1611
16M-BIT
100ns
200ms
PM0511
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MX29L3211
Abstract: 29L3211
Text: ADVANCED INFORMATION MX29L3211 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns/120ns Fast pagemode access time: 50ns
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MX29L3211
32M-BIT
100ns/120ns
200ms
JAN/19/2000
MAY/15/2000
NOV/06/2001
MX29L3211
29L3211
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29L1611-75
Abstract: 29l1611-10
Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.
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MX29L1611
16M-BIT
MX29L1611-75/10/12)
100/30ns,
120/30ns.
MX29L1611-90)
200ms
FEB/10/2000
FEB/21/2000
FEB/29/2000
29L1611-75
29l1611-10
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29L1611-75
Abstract: MX29L1611
Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.
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MX29L1611
16M-BIT
MX29L1611-75/10/12)
100/30ns,
120/30ns.
MX29L1611-90)
200ms
JAN/18/2000
FEB/10/2000
FEB/21/2000
29L1611-75
MX29L1611
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100/120ns Fast pagemode access time: 30/40ns Page access depth: 16 bytes/8 words, page address
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MX29L1611
16M-BIT
100/120ns
30/40ns
200ms
SEP/09/1998
NOV/26/1998
JUN/28/1999
JUL/15/1999
JUL/22/1999
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mxic
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns
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MX29L1611G
16M-BIT
90ns/100ns/120ns
200ms
APR/18/2000
JUL/10/2001
JAN/24/2002
SEP/11/2002
PM0604
mxic
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/120ns Sector erase architecture
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MX29L1611G
16M-BIT
90ns/120ns
200ms
PM0604
APR/18/2000
JUL/10/2001
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MX29L1611G
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/120ns Sector erase architecture
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MX29L1611G
16M-BIT
90ns/120ns
200ms
29L1611G-10--
29L1611G-90
PM0604
APR/18/2000
MX29L1611G
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Untitled
Abstract: No abstract text available
Text: MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns. • Full voltage range 2.7 to 3.6V write, erase and read
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MX29L1611
16M-BIT
MX29L1611-75/10/12)
100/30ns,
120/30ns.
MX29L1611-90)
200ms
a/2000
FEB/21/2000
FEB/29/2000
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5555H
Abstract: No abstract text available
Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.
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MX29L1611
16M-BIT
MX29L1611-75/10/12)
100/30ns,
120/30ns.
MX29L1611-90)
200ms
JAN/18/2000
FEB/10/2000
FEB/21/2000
5555H
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29F1611
Abstract: MX29F1611
Text: INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64
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MX29F1611
16M-BIT
bytes/64
100uA
100/120/150ns
PM0440
29F1611
MX29F1611
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MX29L1611GPC-90
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns
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MX29L1611G
16M-BIT
90ns/100ns/120ns
200ms
APR/18/2000
JUL/10/2001
JAN/24/2002
SEP/11/2002
NOV/21/2002
PM0604
MX29L1611GPC-90
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29L3211
Abstract: 29L321 MX29L3211 MX29L3211MC-10
Text: ADVANCED INFORMATION MX29L3211 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns/120ns Fast pagemode access time: 50ns
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MX29L3211
32M-BIT
100ns/120ns
200ms
PM0641
JAN/19/2000
MAY/15/2000
29L3211
29L321
MX29L3211
MX29L3211MC-10
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MX29F1611
Abstract: No abstract text available
Text: Introduction Selection Guide PRELIMINARY MX29F1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns
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MX29F1611
16M-BIT
100/120/150ns
50/60/70ns
150ms
MX29F1611
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64
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MX29F1611
16M-BIT
bytes/64
100uA
100/120/150ns
PM0440
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
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MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
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MX29L1611
Abstract: MX29L1611G command-30H
Text: ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns
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MX29L1611G
MX29L1611*
16M-BIT
90ns/100ns/120ns
29L1611PC-90/
200ms
APR/18/2000
JUL/10/2001
JAN/24/2002
MX29L1611
command-30H
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 100ns/120ns Sector erase architecture
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MX29L1611G
16M-BIT
100ns/120ns
200ms
MAR/23/1999
MAY/07/1999
PM0604
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MX29F1610B
Abstract: No abstract text available
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
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MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
JUN/15/2001
NOV/21/2002
MX29F1610B
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MX29F1610B
Abstract: MX29F1610A
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
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MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
JUN/15/2001
MX29F1610B
MX29F1610A
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29F8100-12
Abstract: MX29F8100
Text: Introduction Selection Guide PRELIMINARY MX29F8100 8M-BIT 1M x 8/512K x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns
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MX29F8100
8/512K
120/150ns
oper887
CA95131
29F8100-12
MX29F8100
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MX29F8100
Abstract: No abstract text available
Text: PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each
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MX29F8100
8/512K
bytes/64
100uA
120/150ns
44SOP
MAR/08/1999
PM0262
MX29F8100
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MX29F1611
Abstract: No abstract text available
Text: INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64
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MX29F1611
16M-BIT
bytes/64
100uA
100/120/150ns
PM0440
MX29F1611
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