KJE transistor
Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Text: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case
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0235bOS
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151-E1
Q60103-X151-F
Q60103-X151-F1
Q60103-X151-G
Q62901-B1
AC151,
KJE transistor
KJE 17 transistor
NT 101
transistor AC151
AC151
transistor kje
KJE ZO
transistor ac 151
k 151 transistor
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AC181
Abstract: AC161 AG151 AC16F Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1
Text: ESC D • û235bDS Q0Q403S ^ « S I E G 1 PNP Germanium Transistors AC 151 SIEMENS AKTIENGESELLSCHAF 9 04035- 2- A— 151T - Not for new design fo r AF input and driver stages o f m ediu m perform ance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case
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023SbGS
Q0Q403S
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151-E1
Q60103-X151-F
Q60103-X151-F1
Q60103-X151-G
Q62901-B1
AC181
AC161
AG151
AC16F
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151-E1
Q60103-X151-F
Q60103-X151-F1
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k 151 transistor
Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1
Text: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case
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235bD5
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151
Q60103-X151-F
Q60103-X151-F1
Q60103-X151-G
Q62901-B1
AC161.
k 151 transistor
transistor ac 151
AC161
AC151
transistor AC151
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151-F
Q60103-X151-F1
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2DI200A-050
Abstract: SRFE T460 LC1100 VEBo-10V
Text: 2 D I 2 O O A - O 5 O 2 0 0 a s < 7 - h 7 > i > X 9 :E £ > 3 .-J l' : Outline Drawings POWER TRANSISTOR MODULE Features • High Current • High DC Current Gain Insulated Type aM bP tV Po *,t*1r1m U IT A N 0<n *q*u iv«l«nTl ! Applications • High Power Switching
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2DI200A-050
E82988
11S19^
095t/R89
SRFE
T460
LC1100
VEBo-10V
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PDF
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X390
Abstract: FL1000
Text: 1 M 1 B 6 L N -0 6 0 6 o o a : Outline Drawings' IGBT IGBT MODULE 4-06.5±0' : Features < "J * • • VJ!±H£Sft High Speed S w itching Voltage Drive • {&+ > ? ? 9 > x * v = l-iv m fe Low Inductance M odule Structure 2-m Ç 1- • ■ f f i i i s : A p p lic a tio n s
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2FI50A
Abstract: 30S3 T151 T460 T810 T930 hfcf
Text: 2FI50A 2 x 50a g ± /< 7 K iV 'J .- Jl' /U U ^ YM 'ta '•Outline Drawings FAST RECOVERY DIODE MODULE ■ 4# « : Features • Short Reverse Recovery Time • Variety of Connection Menu • Insulated Type l Applications Arc-Welders • 7 'J - *•< — Kffl
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2FI50A
2X50A)
2FI50A
50/60Hz
I95t/R89)
30S3
T151
T460
T810
T930
hfcf
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PDF
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ITA-06318
Abstract: ITA06318 counter ic HP encoders heds 9100 HEDS-5500 HP quadrature encoder ic heds 63 hp quadrature encoder quadrature shaft decoder ic ma 8910
Text: HEWLETT-PACKARD/ L1 c IV blE D CMPNTS M 7 '« HEW LETT WPPm PACKARD H • U4475A4 444^04 ITA-06318 MagIC Silicon Bipolar MMIC 1.5 Gb/s Transimpedance Amplifier 180 mil Package Features • • • • • • • DDDflTib T b T ■ H P A u 1 «-, High Transimpedance Gain: Az = 2800 Q 69 dB
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4447SAU
ITA-06318
HEDS-8902
HEDS-5500
HEDS-5600
HEDS-9000,
HEDS-9100,
HEDS-9200
HEDS-8903
ITA06318
counter ic
HP encoders heds 9100
HEDS-5500 HP
quadrature encoder ic
heds 63
hp quadrature encoder
quadrature shaft decoder
ic ma 8910
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ED36
Abstract: ED-36 B400A
Text: 6 D 1100 IVI "050 loo a : O utline D ra w in g s s < T7 - Y = 7 > i > 7 . 9 :£ i > 3 . - ) \ s POWER TRANSISTOR MODULE 17 6 l i 14 6 17 I y i- 0 5 . 5 -1 / : F e a tu re s • h F E A ''flL ' H ig h DC C urrent Gain • x - f ’r i - v y x f c f — H ig h speed s w itc h in g
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E82988
ED36
ED-36
B400A
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Untitled
Abstract: No abstract text available
Text: ESAC93M-03 i 2 A <<*-¥ : O u tlin e D ra w in g s MAX. LOW LOSS SUPER HIGH SPEED RECTIFIER ¿¿£±0.2 : Features • n W t t B 0 .6 IE w * & & < * t i t - ? ii , - 1 .3 ,5 JEDEC n -K 9 -< y EIAJ Insulate d pa ckage by fu lly m o ld in g • f f iV F L o w V[.-
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ESAC93M-03
19S24^
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9024a
Abstract: No abstract text available
Text: COMMON MODE CHOKE/EMI FILTER IVertical Core Mount | L Miller Min. Number mH 7350 0.5 7351 1 7352 2 7353 5 7354 8 7355 10 7356 22 Test Freq. 1 kHz 1 kHz 1 kHz 1 kHz 1 kHz 1 kHz 1 kHz I,ac R,dc Max. Max. Amps Ohms 1.5 0.12 1.2 0.22 0.85 0.4 0.5 1.0 0.4 2.0 0.35
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A10b9
9024a
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Untitled
Abstract: No abstract text available
Text: 6DI5OZ-12O 50a )V ✓<•7— ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « < OH : Features • S W /E au'cu «V ( v II If •■It« IV (V ili i l High Voltage • 7 U —f t ' f ' J • A S O ^Ja I ' K r tilt i= i' 11 91(1 ti »w E w ? B : -®M è
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6DI5OZ-12O
E82988
l95t/R89
Shl50
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Untitled
Abstract: No abstract text available
Text: DI300M-120 /< 7 _ =l - \ y s : Outline Drawings 10 13 21 r r T POWER TRANSISTOR MODULE * Features • High A rm S hort C ircu it C apability • h F E ^B iv,' • 7 l) — H igh DC C urrent Gain U > ? ? ' % ' — KrtJR • IfeiiiJK Including F re e w h e e lin g Diode
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DI300M-120
E82988
l95t/R89
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PDF
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m9ac
Abstract: 6MBI200FB-060 200a liu 6mb120 T151 T930 OV16E MPC600 T930 S20
Text: 6MBI200FB-060 200A IGBT *'>3-iV : Outline Drawings IGBT MODULE Features Low Saturation Voltage • HJESMfi (M O S -V “ h flliS ) • Voltage Drive Variety of Power Capacity Series t’3>l « l - a - ^ 3 l « . q q \ . , Si, I A p p lica tio n s #7 >7 —
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6MBI200FB-060
l95t/R89
Shl50
m9ac
6MBI200FB-060
200a liu
6mb120
T151
T930
OV16E
MPC600
T930 S20
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transistor b143
Abstract: KVL 005
Text: 6 D I 2 0 IVI S “0 5 0 20 a • O utline D ra w in g s POWER TRANSISTOR MODULE • ¡K H i: : F e a tu r e s • Hi g h D C Cu r r e n t Gai n • X- f y f 1 fc."— Hi g h s p e e d s wi t c h i n g • 7 'J — KrtM • ife iitJ fi I n c l u d i n g F ree W h e e lin g D io d e
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LAMBDA lrs
Abstract: lrs-55-28 LRS-57-28 LRS-55-5 Lambda LRS-54-20 lrs 50-5 lrs-52-6 LRS-53-28 LRS-55-24 LRS-57-5
Text: PART IA-AC-TO-DC SWITCHING POWER SUPPLIES CD Passed environmental tests in accordance with MIL-STD-810C. Low Pressure — Method 500.1, Proc. I. High Temperature — Method 501.1, Proc. I & II. Low Temperature — Method 502.1, Proc. I. Temperature Shock — Method 503.1, Proc. I.
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M1L-STD-810C.
MIL-STD-461A
LRS-55
LRS-56
SERV50NG,
LRS-55.
LRS-57
LRS-58
LAMBDA lrs
lrs-55-28
LRS-57-28
LRS-55-5
Lambda LRS-54-20
lrs 50-5
lrs-52-6
LRS-53-28
LRS-55-24
LRS-57-5
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AC adapter 19V
Abstract: ROE capacitor 220 FPT-24P-M03 MB3875 MB3877 Si4435DY
Text: A S S P For Power Supply Applications Lithium ion battery charger DC/DC Converter 1C for Charging imp flu* §m m mmimmi M R Q x 7 k /M R Q Q 7 7 IV ID O O / v / IV ID O O t i • ■ P % ■ DESCRIPTION The MB3875 and MB3877 are charging DC/DC converter ICs suitable for down-conversion, which uses pulse
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B3875/M
B3877
MB3875
MB3877
MB3875PFV
MB3877PFV
24-pin
FPT-24P-M03)
MB3875/MB3877
AC adapter 19V
ROE capacitor 220
FPT-24P-M03
Si4435DY
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PDF
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Untitled
Abstract: No abstract text available
Text: Hermetically sealed cell 83151 5 For further information, contact us. www.crouzet.com 6 www.crouzet.com For further information, contact us. HERMETICALLY SEALED MICROSWITCH ES SINGLE POLE, CHANGEOVER TYPES 83 151 150°C AND DERIVA TIVES PRESENTATION This is the basic comporent for our whole range of standard 1-pole and 2-poIes hermetically-sealed limit switches plus the 3-poIes version (special Umit Switches).
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nsi 60 jg
Abstract: VCBo-400V transiter CD 100 M6WA
Text: ETI\I35-O3O 300a • : Outline D rawings POWER TRANSISTOR MODULE ’ F e a tu re s H igh C u rre n t • h F E ^ ^ v ,^ H igh DC C u rre n t Gain • Non Insulated T yp e 83 -iVVr'4 ‘ Applications • " jT - 's 'f H igh Pow er S w itc h in g U n in te rru p tib le Pow er S u p p ly
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ETN35-O3O
nsi 60 jg
VCBo-400V
transiter CD 100
M6WA
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PDF
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7IRZ
Abstract: 74LS151 151M1 T74LS151
Text: £ÿj SCS-THOMSON 8-INPUT MULTIPLEXER • ■ ■ ■ SCHOTTKY PROCESS FOR HIGH SPEED M ULTIFUNCTION CAPABILITY ON-CHIP SELECT LOGIC DECODING FULLY BUFFERED CO M PLEM ENTARY OUTPUTS ■ INPUT CLAM P DIODES LIMIT HIGH SPEED TERMINATION EFFECTS ■ FULLY TTL AND CMOS COMPATIBLE
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T74LS151
LS151
T74LS
7IRZ
74LS151
151M1
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PDF
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VDE0627
Abstract: LR7189
Text: A IVI F» Catalog 1242131 U niversal Pow er U -P C onnectors Issued 2-99 Performance D ata, Contacts and Application Tooling Performance Data Voltage Rating: 600V max. Current Rating: *see note 1 & 2 position — 12 A max. 6 p o sitio r— 9A rrax. 12 position — 8A max.
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1-800-522-C752.
VDE0627
LR7189
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F16257C '2S6Kx16 SRAM Module EL£CIR0 MC 0CSI6 N& MC 256KX16 Static RAM High Speed CMOS, Module Features 256Kx16bitCMOS Static The EDI8F16257C is a 256Kx16 CMOS Static RAM Mod Random Access Memory Module ule consisting of four 4 256Kx4 CMOS Static RAMs in
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EDI8F16257C
2S6Kx16
256KX16
256Kx16bitCMOS
EDI8F16257C
256Kx4
EDBF16257C
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PDF
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dc ac inverter 1000 watt
Abstract: 12 volt dc to 220 volt ac inverter 1000 watts 24 volt dc to 230 volt ac inverter INVERTER TRANSFORMER 101 MIL-STD-810C Method 514.2 MIL-STD-810C Sealed Thermostat MLGS-EEA-12-OV mlgs MIL-R-26
Text: 5 YEAR GUARANTEED SWITCHING Lambda MLGA series Features—MLGA series 5-year guaranteed switching power supplies Lambda manufactured heavy-duty steel chassis 3 package sizes, up to 150A, up to 28 volts Chassis designed for easy servicing Lambda MIL-T-27D grade 5 magnetics, vacuum
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MIL-T-27D
MIL-R-26
10-year
dc ac inverter 1000 watt
12 volt dc to 220 volt ac inverter 1000 watts
24 volt dc to 230 volt ac inverter
INVERTER TRANSFORMER 101
MIL-STD-810C Method 514.2
MIL-STD-810C
Sealed Thermostat
MLGS-EEA-12-OV
mlgs
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PDF
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75008
Abstract: OPI2500
Text: OPTEK TECHNOL OGY INC ObE D | L^flSflD 0000234 S | O p to e le c tro n ic s D iv is io n T R W Electronic Components Group 1987 Cost Saver Product! ^ j RW for more ¡„formation! g ÊW ÊW Product Bulletin 5209 January 1985 . j » ^ ^ Optically Coupled Isolators
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OPI25QO,
QPI2501
75008
OPI2500
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PDF
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ABB GB14048. 4
Abstract: ABB GB14048. 3 en iec 60721-3-3 F0009 abb CM-IWN en 60721-3-3 temperature temperature abb mtbf abb earth leakage relay GB14048 R0100
Text: Data sheet Coupling unit CM-IVN For expansion of the insulation monitoring relay CM-IWN.1 measuring range up to Un = 690 V AC and 1000 V DC 2CDC 251 081 S0009 The CM-IVN serves to extend the measuring range of the insulation monitoring relay CM-IWN.1 for monitoring the insulation resistance
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S0009
ABB GB14048. 4
ABB GB14048. 3
en iec 60721-3-3
F0009
abb CM-IWN
en 60721-3-3
temperature temperature abb mtbf
abb earth leakage relay
GB14048
R0100
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