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    ABS-08 DIODE Search Results

    ABS-08 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ABS-08 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SERVICE MANUAL tv hyundai

    Abstract: SERVICE MANUAL tv hyundai 29" 42-SDIP GMS81504 t1oi S8160 he007h
    Text: HYUNDAI MicroElectronics 8-bit Microcontrollers GMS81604/08 Revision History Rev 1.2 Dec. 1998 Redraw package dimension on page 5~6. Rev 1.1 (Nov. 1998) Operating Voltage, 2.7~5.5V is extended to 2.4~5.5V. Operating Temperature, -20~80°C is extended to -20~85°C.


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    GMS81604/08 6000H S81608 SERVICE MANUAL tv hyundai SERVICE MANUAL tv hyundai 29" 42-SDIP GMS81504 t1oi S8160 he007h PDF

    lg tv 29" circuits diagrams

    Abstract: marking code ADH OA81 GMS800 GMS800 INSTRUCTION 27c256 intel Analog devices marking 8F lg tv led driver circuit diagram marking code R66 SEMICON INC
    Text: LG Semicon 8-bit Microcontrollers GMS81604/08 Revision History Rev 1.2 Dec. 1998 Redraw package dimension on page 5~6. Rev 1.1 (Nov. 1998) Operating Voltage, 2.7~5.5V is extended with 2.4~5.5V. Operating Temperature, -20~80°C is extended with -20~85°C.


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    GMS81604/08 offi0000H 6000H S81608 lg tv 29" circuits diagrams marking code ADH OA81 GMS800 GMS800 INSTRUCTION 27c256 intel Analog devices marking 8F lg tv led driver circuit diagram marking code R66 SEMICON INC PDF

    30WQ04FN

    Abstract: No abstract text available
    Text: Bulletin PD-21053 rev. B 08/06 30WQ04FNPbF 3.5 Amp SCHOTTKY RECTIFIER IF AV = 3.5Amp VR = 40V Major Ratings and Characteristics Description/ Features The 30WQ04FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and


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    PD-21053 30WQ04FNPbF 30WQ04FNPbF O-252AA 30WQ04FN PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-21053 rev. B 08/06 30WQ04FNPbF 3.5 Amp SCHOTTKY RECTIFIER IF AV = 3.5Amp VR = 40V Major Ratings and Characteristics Description/ Features The 30WQ04FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and


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    PD-21053 30WQ04FNPbF 30WQ04FNPbF O-252AA PDF

    80CPQ20

    Abstract: No abstract text available
    Text: Bulletin PD-20800 08/04 80CPQ020PbF SCHOTTKY RECTIFIER 80 Amp IF AV = 80Amp VR = 20V Major Ratings and Characteristics Characteristics Description/ Features Values Units IF(AV) Rectangular 80 A VRRM 20 V IFSM @ tp = 5 µs sine 2200 A VF @ 40 Apk, TJ= 150°C


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    PD-20800 80CPQ020PbF 80Amp 80CPQ20 80CPQ20T 10E-2 38E-2 36E-1 27E-2 39E-2 PDF

    QL24

    Abstract: QL29 QL-37 QB46 QL-61 QL-78 QL-46
    Text: BROADBAND SPST SWITCH SERIES QL/QB-A REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Series QL/QB broadband switches are medium power devices that oper­ ate over relatively wide frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent


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    QN-10 QN-38 QN-11-HA QN-99-HA QL24 QL29 QL-37 QB46 QL-61 QL-78 QL-46 PDF

    QN22-a

    Abstract: LY62 LY-17 LY31 LY-22 LY-69 QN68 LY-43
    Text: NARROWBAND SPST SWITCH REFELECT1VE AND ABSORPTIVE 0.02-1S GHz SERIES LY/QN-A GENERAL INFORMATION: Series LY and QN-A broadband switches are medium power devices that operate over commonly used narrowband frequency ranges. Carefully se­ lected diodes placed in either series, series-shunt configurations produce


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    02-1S LY-17 LY-43 QN-10A QN-95A LY-47 LY-99 QN22-a LY62 LY31 LY-22 LY-69 QN68 PDF

    VB34

    Abstract: kdi switch ITT 710 VB-25-A VB23A
    Text: BROADBAND SP3T SWITCH SERIES VM/VB-A REFLECTIVE AND ABSORPTIVE 0.02-18 GHz _ 1.40 _ 3.56 _ 1.200 _ 3 048 GENERAL INFORMATION: Series VM and VB-A broadband switches are medium power devices that operate over relatively wide frequency ranges. Carefully selected diodes


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    TF-747

    Abstract: TN796 TF-768 TF-738 TF-714 TN-768-A Tf76 TF78 TN-717-A TN-726
    Text: NARROWBAND SP7T SWITCH SERIES TF-7/TN-7-A REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Series TF-7 and TN-7-A switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent elec­


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    XA-52

    Abstract: XA19 xa50 Xa54 XN12A XN74 XA-48 XA43 xa22 XA32
    Text: NARROWBAND SPOT SWITCH SERIES XA/XN-A REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Series XA and XN narrowband switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excel­


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    TF-680

    Abstract: TF-659 TF-617 TF620 TF-62-0 itt ol 170 TF-629 TF611 TF-614 TF-620
    Text: NARROWBAND SP6T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-1« GHz SERIES TF-6/TN-6-A GENERAL INFORMATION: Series TF-6 and TN-6-A switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent elec­


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    QB73

    Abstract: QB77 QB-64 QB46 QB-43 QB-37 QB-77 QB-73 QB-33 QB13
    Text: BROADBAND SPST SWITCH SERIES QB/QB-HA HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Serles Q B and OB-H A broadband switches are medium power devices that operate over relatively wide frequency ranges. Carefully selected diodes


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    QB-11 QB-39 QB-10-HA QB-99-HA QB-41 QB-95 QB73 QB77 QB-64 QB46 QB-43 QB-37 QB-77 QB-73 QB-33 QB13 PDF

    TF-450

    Abstract: TF-459 TF-474 TF-435 TF-438 TF-492 tN494 TF480 TF-429 tf423
    Text: NARROWBAND SP4T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES TF-4/TN-4-A GENERAL INFORMATION: Series TF-4 and TN-4-A narrowband switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, serles-shunt, or shunt configurations pro­


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    VN-86-A

    Abstract: VN84 VN-99-A VN-79-A VT-88 VN-40-A VT-95 VT-47 VN-33-A VN88A
    Text: NARROWBAND SP3T SWITCH SERIES VT/VN-A REFLECTIVE AND ABSORPTIVE 0.02-18 GHz _ GENERAL INFORMATION: 1 .4 0 _ 3.5 6 _ 1.200 _C 10 0 .2 5 3 .0 4 8 Series VT and VN-A narrowband switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes


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    TB622

    Abstract: tb 10 n 6 tb66 TB-612 TB-688 652 ITT TB-646 TB-680 TB-663-HA TB-628-HA
    Text: BROADBAND SP6T SWITCH SERIES TB-6/TB-6-HA HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0. 02-18 GHz GENERAL INFORMATION: Series TB-6 and TB-6-HA switches are medium power devices that oper­ ate over relatively wide frequency ranges. Carefully selected diodes placed


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    xb60

    Abstract: XB-82 XB-77 XB13 kdi switch XB-61 xb33ha XB91
    Text: BROADBAND SPOT SWITCH SERIES XB/XB-HA HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Series XB broadband switches are medium power devices that operate over relatively wide frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent elec­


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    XB-98-HA XB-98 XB-99-HA XB-99 xb60 XB-82 XB-77 XB13 kdi switch XB-61 xb33ha XB91 PDF

    TB556

    Abstract: TB-548-HA TB540 TB-524 TB531 TB-593 TB-572 TB562 TB-530 HA 555
    Text: BROADBAND SP5T SW ITCH S E R IE S TB-5/TB-5-HA HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0.02- 18 GHz - 0 3 Í 1/0.97 TYP 012 031 GENERAL INFORMATION: Series TB-5 and TB-5-HA switches are medium power devices that oper­ ate over relatively wide frequency ranges. Carefully selected diodes placed


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    QN68

    Abstract: qn40 QN-60 QN-38 QN-72 QN53H
    Text: NARROWBAND SERIES QN/QN-HA SPST SWITCH HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE GENERAL INFORMATION: Series QN and QN-HA broadband switches are medium power devices that operate over commonly used narrowband frequency ranges. Carefully selected diodes placed in either series, seríes-shunt configurations pro­


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    QN-10 QN-38 QN-11-HA QN-99-HA mode90 QN68 qn40 QN-60 QN-72 QN53H PDF

    TN-810

    Abstract: TN81 TN-861 TN-811 tn810 TN812 TN840 TN-812 TN-822 TN-882
    Text: NARROWBAND SP8T SWITCH SERIES TN-8/TN-8-HA HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Series TN-8 and TN-8-HA switches are medium power devices that oper­ ate over commonly used frequency ranges. Carefully selected diodes placed ¡n either series, series-shunt, or shunt configurations produce excel­


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    vb19

    Abstract: VB26 VB-33-HA VB-44 VB-66-HA VB-39 VB-64-HA VB46 VB-44-HA VB22
    Text: BROADBAND SP3T SWITCH SER IES VB/VB-HA HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Series VB and VB-HA broadband switches are medium power devices that operate over relatively wide frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excel­


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    TN431

    Abstract: TN-457 tn464 TN-490-HA TN414 TN-421 TN-451 tn461 TN-473 TN415
    Text: NARROWBAND SP 4 T S W IT C H S E R IE S TN-4/TN-4HA HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz, GENERAL INFORMATION: Series TN-4 and TN-4-HA switches are medium power devices that oper­ ate over commonly used frequency ranges. Carefully selected diodes


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    XN60

    Abstract: xn51 XN-71 XN39 XN-96 XN-88 xn73 XN-14 XN-67 XN-99-HA
    Text: NARROWBAND SPDTSWITCH SER IES XN/XN-HA HIGH ISOLATION REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION: Series XN and XN-HA switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either seríes, series-shunt, or shunt configurations produce excellent elec­


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    T05 sot-23

    Abstract: sot T11 PAD200 MARKING T20 SOT23 VPAD10 SSTPAD20 SSTPAD50 SSTPAD5-200 CR marking sot-23 SOT-23 marking 352
    Text: Low Leakage Pico Amp Diodes calocflc C O RPO RATIO N JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 FEATURES DESCRIPTION • Low L e a k a g e .5 pA JPAD5


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    PAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 D10/SSTPAD20/SSTPAD50/SSTPAD100/SSTPAD200 PAD20 PAD50 PAD200 OT-23 T05 sot-23 sot T11 PAD200 MARKING T20 SOT23 VPAD10 SSTPAD20 SSTPAD50 SSTPAD5-200 CR marking sot-23 SOT-23 marking 352 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Leakage Pico Amp Diodes calodjc CO RPO RATIO N JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 FEATURES DESCRIPTION • Low L e a k a g e .5 pA JPAD5


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    PAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 D10/SSTPAD20/SSTPAD50/SSTPAD100/SSTPAD200 PAD50 PAD20 PAD200 PDF