ABB PHASE CONTROL THYRISTORS Search Results

thyristor Q 720

Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor

GTO hvdc thyristor

Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives

ABB 5STP 12

Abstract: 24L00 5STP IG 2200 19 5stp 45n 3600 5STP 18L 3600 05mm2 ABB Semiconductors DDQ001S abb phase control thyristors
Contextual Info: Phase Control Thyristors ABB Semiconductors AG I II V DSM •t a v m < t y p e and ordering n um ber Patentierter freier Druckkontakt. Ausgelegt für Hochleistungsanwendungen in der Industrie und Energieübertragung. Optimiert für tiefe Durchlaßspannungen.

ABB EH 1200

Abstract: ABB 5STP 12 ABB EH 250 5STP45N 5stp 6 abb phase control thyristors 5STP 4 5STP 12 ABB 5STP 07D
Contextual Info: Phase Control Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. Designed for high pow er industrial and energy m anagem ent applications. O ptim ized for low on-state voltage drop. M atched Q rr and VT values available for series and/or parallel connection.

mcc 90-12

Abstract: MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 ABB mcc MCC 90-06 io 8 Thyristor mcc mcc 90-08 ABB thyristor modules
Contextual Info: A S E A BROUN/ABB SEMICON Netz-Thyristor-Module aJ- F | 00Mfl30fl ouuuiiii i l ] Phase control Thyristor-Modules T - 2 5 - 2 3 EE! Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

ABB ACS 800

Abstract: thyristor cs 1702-38 cs 1000-16 ASEA Brown din 5480 CS 601 thyristor CS 1001-25 abb thyristor 170242 CS 370 thyristor
Contextual Info: S E A A3 BROWN/ABB SEMICON Vdrm Vrrm •trms V A tavi ^Tc * Typ/type 0040300 0000175 7 T -Z 5 -Q Phase control thyristors Netzthyristoren Thyristor » " I A/°C Itavm Tc = 85° C hrsM O vjm 8,3 ms 10 ms A A A Vr ft h" 10 ms) Tvj=45°c tvjm DRM Irrm ( %

ABB ACS 800

Abstract: abb cs 400 130016 cs 730 abb acs 150 CS 370 thyristor CS thyristor cs 6 CS thyristor cs 5-10 44108 130232
Contextual Info: S E A A3 BROWN/ABB SEMICON Vdrm Vrrm •trms V A tavi ^Tc * Typ/type 0040300 0000175 7 T -Z 5 -Q Phase control thyristors Netzthyristoren Thyristor » " I A/°C Itavm Tc = 85° C hrsM O vjm 8,3 ms 10 ms A A A Vr ft h" 10 ms) Tvj=45°c tvjm DRM Irrm ( %

CS thyristor cs 6-06

Abstract: CS 23-16 thyristor CS5 thyristor CS 23-06 thyristor CS thyristor cs 3-04 CS thyristor cs 6 CS 23-04 thyristor CS thyristor cs 3-06 cs 8-12 Thyristor CS 23-08 thyristor
Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

25-12io8

Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Thyristor MCD

Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Contextual Info: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

mcc 55-12

Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

abe 810

Abstract: CS thyristor cs 6 f0023 abb thyristor 500AC CS thyristor cs 5-10 CS 630 F CS 661-32 130238 0/abe 810
Contextual Info: A S E A BROWN/ ABB A3 SEMI CON Netzthyristoren Thyristor Typ/type * 0 0 4 ñ 3 0 fi 0 0 0 0 1 7 5 Phase control thyristors Vr r m •t r m s h w i/Tc hvwM Tc = 85°C V A v drm D I A/°C A •t s m Ovjm 8,3 ms A 10 ms A ft 10 ms) TVJS45°C tvjm A 2S AJS

Contextual Info: D &3 A S E A BROWN/ABB SENICON 1 □ □4Û3GÛ 3 I 7/- i s- z ? Phase control Thyristor-Modules Netz-Thyristor-Module Daten pro D io d e o d e r T h y ristor/ data p e r d io d e o r th y risto r/ les c a ra cté ristiq u e s s e ra p porte n t à 1 d io d e ou à 1 th yristor

MCC 25-12

Abstract: ABB mcc 25-12io8 mcc-25-12 mcc 25-06 THYRISTOR MODULE MCC 25 MCC 25 MCC 25-08 mcc 25-16 mcc 40-12
Contextual Info: D &3 A S E A BROWN/ABB SENICON 1 3 I 7/- i s- z □ □4Û3GÛ ? Phase control Thyristor-Modules Netz-Thyristor-Module Daten pro D io d e o d e r T h y ristor/ data p e r d io d e o r th y risto r/ les c a ra cté ristiq u e s s e ra p porte n t à 1 d io d e ou à 1 th yristor

mcc 90-12

Abstract: MCC 90-16 abb mcc 90-12 ASEA thyristor ABB thyristor modules mcc 250 thyristor MCC 90-15 ABB thyristor modules MCC 65 MCC 90-14 MCC 90
Contextual Info: A S E A BROüJN/ABB "T -2 L 5 -2 3 SEMICON ES! Phase control Thyristor-Modules Netz-Thyristor-Module D aten p ro D iode o d e r T h y ris to r/d a ta p e r d io d e o r th y r is to r /les ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

W3100

Abstract: DIODE REDRESSEMENT T-25-23 ABB thyristor modules k4101 K21-0120A Diodes de redressement
Contextual Info: A S E A BROUN/ABB “ñ3 SEMICON Netz-Thyristor-Diode-Module iT | □□4ñ30ñ □□□Dns 2 1 ~ -^ -_ 2 5 -2 3 Phase control Thyristor-Diode-Modules D aten pro D iode Oder T h y ris to r/d a ta p e r d io d e o r th y r is to r /ie s ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

Contextual Info: VDM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 2630 A = 4130 A = 43x103 A = 0.85 V = 0.16 mΩ Bi-Directional Control Thyristor 5STB 24Q2800 Doc. No. 5SYA1053-02 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology

abb phase control thyristors

Contextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 5200 V = 1980 A = 3100 A = 42x103 A = 1.06 V = 0.219 m Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-03 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology

Contextual Info: VDM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology •

ABB s

Contextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology

Contextual Info: VDM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1920 A = 3020 A = 32x103 A = 0.96 V = 0.285 mΩ Bi-Directional Control Thyristor 5STB 18N4200 Doc. No. 5SYA1040-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology