Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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NT5DS16M16BF-6K
Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
Text: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions
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NT5DS64M4BT
NT5DS32M8BT
NT5DS16M16BT
NT5DS64M4BF
NT5DS32M8BF
NT5DS16M16BF
NT5DS64M4BS
NT5DS32M8BS
NT5DS16M16BS
NT5DS64M4BG
NT5DS16M16BF-6K
NT5DS32M8BT
NT5DS16M16BT-6K
NT5DS16M16BT
NT5DS64M4BT
NT5DS32M
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DDR200
Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
Text: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).
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IBMN625404GT3B
IBMN625804GT3B
256Mb
DDR266A
DDR266B
DDR200
29L0011
E36997B
DDR200
DDR266A
DDR266B
IBMN62540
IBMN625404GT3B
IBMN62580
IBMN625804GT3B
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PDF
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DDR200
Abstract: DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66
Text: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR200 -7 -8 133 100 143 125 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted
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HYB25D256400/800AT
256-MBit
DDR266A
DDR200
DDR200
DDR266A
HYB25D256400AT-7
HYB25D256400AT-8
HYB25D256800AT-7
HYB25D256800AT-8
TSOP66
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PDF
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A48P4616
Abstract: DDR333 DDR400
Text: A48P4616 Preliminary 16M X 16 Bit DDR DRAM Document Title 16M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue September 5, 2005 Preliminary Preliminary September, 2005, Version 0.0 AMIC Technology, Corp. A48P4616 Features
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A48P4616
400mil;
A48P4616
DDR333
DDR400
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Untitled
Abstract: No abstract text available
Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count 2.5V ±0.2V core power supply Reduced I/O count
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W3E16M64S-XBX
16Mx64
266Mbps
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PDF
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Untitled
Abstract: No abstract text available
Text: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module
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128MB,
256MB
200-PIN
MT8VDDT1664HG
MT8VDDT3264HG
128MB
MO-224
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PDF
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB x72, ECC 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT5VDDT872A, MT5VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 184-Pin DIMM (MO 206) • JEDEC standard 184-pin, dual in-line memory
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128MB
184-PIN
MT5VDDT872A,
MT5VDDT1672A
184-pin,
333MT/s
PC2700,
PC2100
PC1600
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PDF
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57256
Abstract: DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4
Text: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets/
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256Mb:
MT46V64M4
MT46V32M8
MT46V16M16
256Mx4x8x16DDR
57256
DDR200
DDR266B
MT46V16M16
MT46V32M8
MT46V64M4
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PDF
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HYB25DC256163CE
Abstract: No abstract text available
Text: Datasheet, Rev.1.00, Feb. 2006 HYB25DC256163CE-5.0 HYB25DC256163CE-6.0 16M x 16 Double Data Rate SDRAM DDR SDRAM Green Product Memory Products Edition 2006-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2006.
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HYB25DC256163CE-5
HYB25DC256163CE-6
02102006-NEDF-FR54
HYB25DC256163CE-
256-Mbit
GPX09261
P-TSOPII-66-1
HYB25DC256163CE
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W641GG2KB
Abstract: gddr3 schematic WBGA-136 W641GG2
Text: W641GG2KB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7
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W641GG2KB
A01-001
W641GG2KB
gddr3 schematic
WBGA-136
W641GG2
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 128MB, 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT1664AG MT8VDDT3264AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)
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128MB,
256MB
184-PIN
128MB
DD8C16
32X64AG
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 1GB x72, ECC 184-PIN DDR DIMM REGISTERED DDR SDRAM DIMM MODULE MT36VDDF12872 – 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds Features Figure 1: 184-Pin DIMM MO-206 • 184-pin, dual in-line memory module (DIMM)
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184-PIN
184-pin,
PC1600,
PC2100,
ddf36c128x72g
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB X64 184-PIN DDR SDRAM DIMM DDR SDRAM DIMM MODULE MT4VDDT864A, MT4VDDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES Figure 1: 184-Pin DIMM (MO–206) • JEDEC standard 184-pin, dual in-line memory
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128MB
184-PIN
184-pin,
333MT/s
PC1600,
PC2100,
PC2700
09005aef806e129d
16X64AG
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PDF
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|
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W3E16M72S-XBX
Abstract: W3E32M72S-XBX
Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply
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W3E16M72S-XBX
16Mx72
W3E16M72S-XBX
W3E32M72S-XBX
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PDF
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81BB
Abstract: BAA marking code DDR200 DDR266 HYB25D256 HYB25D256160BT-5 HYB25D256400B HYB25D256400BC-5 HYB25D256800BT-5
Text: Data Sheet, Rev. 1.2, Feb. 2004 HYB25D256400B[T/C] L HYB25D256800B[T/C](L) HYB25D256160B[T/C](L) 256 Mbit Double Data Rate SDRAM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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HYB25D256400B
HYB25D256800B
HYB25D256160B
HYB25D256
256-Mbit
P-TSOPII-66-1
02102004-TSR1-4ZWW
81BB
BAA marking code
DDR200
DDR266
HYB25D256160BT-5
HYB25D256400BC-5
HYB25D256800BT-5
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PDF
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U15B
Abstract: No abstract text available
Text: PRELIMINARY‡ 1GB, 2GB x72 184-PIN REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT36VDDT12872 MT36VDDT25672 For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 184-Pin DIMM MO-206 • 184-pin, dual in-line memory modules (DIMM)
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184-PIN
MT36VDDT12872
MT36VDDT25672
MO-206
184-pin,
PC1600
PC2100
DD36C128
256x72G
U15B
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PDF
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16GB
Abstract: DDR DIMM pinout micron 184
Text: ADVANCE‡ 256MB, 512MB ECC x72 184-pin DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT18VDDT3272AG - 256MB MT18VDDT6472AG - 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)
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256MB,
512MB
184-pin
256MB
DD18C32
64X72AG
16GB
DDR DIMM pinout micron 184
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PDF
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MT16VDDS6464HG-265
Abstract: No abstract text available
Text: 512MB x64 200-PIN DDR SODIMM MT16VDDS6464H - 512MB SMALL-OUTLINE DDR SDRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (Twin-Die) MO-224 • 200-pin, small-outline, dual in-line memory
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512MB
200-PIN
200-pin,
PC1600
PC2100
DDS16C64X64HG
MT16VDDS6464HG-265
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 MEG X 4 X 4 BANKS MT46V64M8 – 16 MEG X 8 X 4 BANKS MT46V32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets
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512Mb:
09005aef8076894f
512MBDDRx4x8x16
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PDF
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Untitled
Abstract: No abstract text available
Text: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module
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128MB,
256MB
200-PIN
PC2100
PC1600
128MB
DD8C16
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PDF
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Untitled
Abstract: No abstract text available
Text: PREVIEW‡ 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT16VDDT3264A - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES • • • • • • • • • • • • • • • • •
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256MB
184-PIN
PC3200
512MB
DD16C32
64X64AG
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PDF
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W3E64M72S-XBX
Abstract: No abstract text available
Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply
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W3E64M72S-XBX
64Mx72
333Mbs
512MByte
W3E64M72S-ESB
W3E64M72S-XBX
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PDF
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timing controller SHART
Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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K4U52324QE
512Mbit
32Bit
136Ball
timing controller SHART
T21N
K4U52324Q
SAMSUNG GDDR4
K4U52324QE-BC09
GDDR4
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PDF
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