arm cortex a9
Abstract: cortex A9 cortex-a9 Dual-core ARM Cortex-A9 CPU DMC 269 HBI0183 ARM cortex A9 neon PROCESSOR CORTEX-A9 ARM Cortex-A9 ARM JTAG cortex a9
Text: RealView Platform Baseboard Explore for Cortex -A9 HBI-0182 baseboard and HBI0183 (daughterboard) User Guide Copyright 2009 ARM Limited. All rights reserved. ARM DUI 0440A (ID042309) RealView Platform Baseboard Explore for Cortex-A9 User Guide
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HBI-0182
HBI0183
ID042309)
ID042309
arm cortex a9
cortex A9
cortex-a9
Dual-core ARM Cortex-A9 CPU
DMC 269
HBI0183
ARM cortex A9 neon
PROCESSOR CORTEX-A9
ARM Cortex-A9
ARM JTAG cortex a9
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Cortex-A9
Abstract: arm cortex a9 mpcore MOTHERBOARD Chip Level MANUAL ARM cortex A9 neon PC MOTHERBOARD CIRCUIT diagram PL111 ARM Cortex-A9 primecell pl310 cortex a9 PROCESSOR CORTEX-A9
Text: CoreTile Express A9x4 Cortex -A9 MPCore V2P-CA9 ™ Technical Reference Manual Copyright 2009-2010 ARM. All rights reserved. DUI0448D (ID101310) CoreTile Express A9x4 Technical Reference Manual Copyright © 2009-2010 ARM. All rights reserved. Release Information
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DUI0448D
ID101310)
ID101310
Cortex-A9
arm cortex a9 mpcore
MOTHERBOARD Chip Level MANUAL
ARM cortex A9 neon
PC MOTHERBOARD CIRCUIT diagram
PL111
ARM Cortex-A9
primecell pl310
cortex a9
PROCESSOR CORTEX-A9
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DB24602
Abstract: C7031
Text: DB24602 Tentative Total pages page DB24602 Silicon epitaxial planar type For rectification Marking Symbol : A9 Package Code : TMiniP2-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Rating Unit Reverse voltage Maximum peak reverse voltage Forward current *1
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DB24602
DB24602
C7031
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Untitled
Abstract: No abstract text available
Text: SN74CBTD3861 10-BIT FET BUS SWITCH WITH LEVEL SHIFTING SCDS084A – JULY 1998 – REVISED OCTOBER 1998 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D Designed to Be Used in Level-Shifting NC A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 GND Applications
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SN74CBTD3861
10-BIT
SCDS084A
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AM29F010B
Abstract: AS8F128K32
Text: FLASH AS8F128K32 Austin Semiconductor, Inc. 128K x 32 FLASH PIN ASSIGNMENT Top View FLASH MEMORY ARRAY 68 Lead CQFP (Q & Q1) • • NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-94716 MIL-STD-883
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AS8F128K32
MIL-STD-883
150ns
T962-9471602HNX
5962-9471603HNX
5962-9471604HNX
5962-9471605HNX
AS8F128K32Q-150/Q
AS8F128K32Q-120/Q
AS8F128K32Q-90/Q
AM29F010B
AS8F128K32
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Si2309DS
Abstract: Si2309DS-T1
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code
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Si2309DS
O-236
OT-23)
Si2309DS-T1
Si2309DS-T1-E3
18-Jul-08
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503A16
Abstract: AM29F010B AS8F128K32
Text: FLASH AS8F128K32 Austin Semiconductor, Inc. 128K x 32 FLASH PIN ASSIGNMENT Top View FLASH MEMORY ARRAY 68 Lead CQFP (Q & Q1) • • NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-94716 MIL-STD-883
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AS8F128K32
MIL-STD-883
150ns
AS8F128K32Q-150/Q
AS8F128K32Q-120/Q
AS8F128K32Q-90/Q
AS8F128K32Q-70/Q
AS8F128K32Q-60/Q
5962-9471601HNX
5962-9471602HNX
503A16
AM29F010B
AS8F128K32
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AM29F010B
Abstract: AS8F128K32 AM29F010
Text: FLASH Austin Semiconductor, Inc. 128K x 32 FLASH AS8F128K32 PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS 68 Lead CQFP (Q & Q1) • • NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc FLASH MEMORY ARRAY SMD 5962-94716 MIL-STD-883
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AS8F128K32
MIL-STD-883
150ns
Tog62-9471602HNX
5962-9471603HNX
5962-9471604HNX
5962-9471605HNX
AS8F128K32Q-150/Q
AS8F128K32Q-120/Q
AS8F128K32Q-90/Q
AM29F010B
AS8F128K32
AM29F010
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Untitled
Abstract: No abstract text available
Text: FLASH AS8F128K32 Preliminary Austin Semiconductor, Inc. 128K x 32 FLASH PIN ASSIGNMENT Top View FLASH MEMORY ARRAY 68 Lead CQFP (Q) • • NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-94716 MIL-STD-883
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MIL-STD-883
150ns
125oC
-55oC
125oC
AS8F128K32
AS8F128K32Q-150/Q
AS8F128K32Q-120/Q
AS8F128K32Q-90/Q
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VID125-12P1
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1
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121T120
125-12P1
VID125-12P1
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C67078-S1316-A9
Abstract: No abstract text available
Text: BUZ 71 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 71 S2 60 V 14 A 0.1 Ω TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter
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O-220
C67078-S1316-A9
C67078-S1316-A9
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diode MARKING CODE A9
Abstract: S-21339 Si2309DS diode MARKING CODE A9 sot23
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) ID (A) 0.340 @ VGS = -10 V - 1.25 0.550 @ VGS = -4.5 V -1 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2309DS
O-236
OT-23)
08-Apr-05
diode MARKING CODE A9
S-21339
diode MARKING CODE A9 sot23
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Untitled
Abstract: No abstract text available
Text: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC
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AS5SS256K18
AS5SS256K18
AS5SS256K18DQ-8/IT
-40oC
-55oC
125oC
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Si2309DS
Abstract: Si2309DS-T1 SI2309DS-T1-E3
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code
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Si2309DS
O-236
OT-23)
Si2309DS-T1
Si2309DS-T1-E3
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Si2309DS
Abstract: Si2309DS-T1 7083
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code
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Si2309DS
O-236
OT-23)
Si2309DS-T1
Si2309DS-T1-E3
08-Apr-05
7083
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diode MARKING CODE A9
Abstract: Si2309DS
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.340 @ VGS = –10 V –1.25 0.550 @ VGS = –4.5 V –1 –60 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2309DS
O-236
OT-23)
S-60573--Rev.
30-Nov-98
diode MARKING CODE A9
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Untitled
Abstract: No abstract text available
Text: FLASH Austin Semiconductor, Inc. 128K x 32 FLASH PIN ASSIGNMENT Top View FLASH MEMORY ARRAY 68 Lead CQFP (Q & Q1) NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc AVAILABLE AS MILITARY SPECIFICATIONS • • SMD 5962-94716 MIL-STD-883 I/O 0 I/O 1
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MIL-STD-883
150ns
AS8S8F128K32Q-150/Q
AS8F128K32Q-120/Q
AS8F128K32Q-90/Q
AS8F128K32Q-70/Q
AS8F128K32Q-60/Q
5962-9471601HNX
5962-9471602HNX
5962-9471603HNX
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transistor opm
Abstract: inductive sensor SYMBOL
Text: IGBT Module PSII 100/06* IC80 = VCES = VCE sat typ.= Short Circuit SOA Capability Square RBSOA 80 A 600 V 2.3 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol A15 A7 A9 G15 V12 V13 N15 V9 V10 D1
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Si2309DS
Abstract: No abstract text available
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) ID (A) 0.340 @ VGS = -10 V - 1.25 0.550 @ VGS = -4.5 V -1 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2309DS
O-236
OT-23)
S-21339--Rev.
05-Aug-02
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Untitled
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline
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25T60
50-06P1
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Diode HER 107
Abstract: polaroid HNCP37 HP 5x7 LED driver IC J3007 HDSP-2003 HDSP2003 B2770
Text: red YELLOW HIGH EFFICIENCY RED HDSP2000LP HDSP2001LP HDSP2002LP HDSP2003LP GREEN .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Display Package Dimensions in Inches mm ».1 1u ^ 11.1.70C0i5(4(4143} p111£ ij 0 0 (8.A9) -m — -.609(177!3)max.-►
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OCR Scan
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HDSP200XLP
SP2000L
P/2001
LP/200
P/2003LP
Diode HER 107
polaroid HNCP37
HP 5x7 LED driver IC
J3007
HDSP-2003
HDSP2003
B2770
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Untitled
Abstract: No abstract text available
Text: ESJ A9 8 6 k V 8 , k V : Outline Drawings HIGH VOLTAGE SILICO N DIODE E S JA 9 8 (i, -yT'5:1 l- T iijh L fc E S JA 9 8 is high reliability resin molded type high seepd high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.
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S30S3*
95t/R89
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 71 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 S2 Vbs 60 V h> 14 A ^DS on 0.1 n Package Ordering Code TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1316-A9
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 71 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V'ds BUZ 71 S2 60 V b 14A ^DS on Package Ordering Code 0.1 Q TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Values Continuous drain current
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OCR Scan
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O-220
C67078-S1316-A9
235bQ5
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PDF
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