Untitled
Abstract: No abstract text available
Text: WJ-A81 / SMA81 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30 dB TYP. HIGH GAIN: 24 dB (TYP.) HIGH LEVEL OUTPUT: +17 dBm (TYP.) LOW NOISE: 3.5 dB (TYP.) Outline Drawings A81 0.450 n (11-41)U
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WJ-A81
SMA81
Inpu16
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A81-1
Abstract: CA81-1 SMA81-1
Text: A81-1 / SMA81-1 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features • • • • Product Image High Reverse Isolation : >30 dBm TYP. Low Noise: 2.4 dB (TYP.) High Gain: 25 dB (TYP.) High Level Output: +13.5 dBm (TYP.) Description The A81-1 RF amplifier is a discrete hybrid design, which
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A81-1
SMA81-1
MIL-STD-883
CA81-1
SMA81-1
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SMA81-1
Abstract: No abstract text available
Text: Cascadable Amplifier 20 to 250 MHz A81-1 / SMA81-1 V3 Features • • • • Product Image High Reverse Isolation : >30 dBm TYP. Low Noise: 2.4 dB (TYP.) High Gain: 25 dB (TYP.) High Level Output: +13.5 dBm (TYP.) Description The A81-1 RF amplifier is a discrete hybrid design, which
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A81-1
SMA81-1
MIL-STD-883
SMA81-1
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Untitled
Abstract: No abstract text available
Text: * + , (-./ 0 1- 234 0 8 9 5 : 5 ; 5 : * ? 9 * < 5 : "<( < $ ; B 8 * 9 9 9 8 < 9 = > 9 9 F 9) 9 $* 9 A81 H ! < * 9) $ 5 5 5 ? *9 @ = ? *9 : + < 5 " << * 9 $* * (-.CDE 9 1FG8 ( 5 , 1-67 0 ! <: 9 * 5 A @ : (-.CDE 8 9 1FG8 9 @ ; * : 9 A81 H ! A G < ? * A G
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Untitled
Abstract: No abstract text available
Text: WJ-A81-2 / SMA81-2 20 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ + 15 VDC (TYP.) LOW NOISE 3.6 dB (TYP.) HIGH GAIN: >22.0 dB (TYP.) Outline Drawings A81-2
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WJ-A81-2
SMA81-2
A81-2
50-ohm
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WJ-CA81-1
Abstract: WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401
Text: uuU A81-1 /SMA81-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30 dB TYP. LOW NOISE: 2.4 dB (TYR) HIGH GAIN: 25 dB (TYR) HIGH LEVEL OUTPUT: +13.5 dBm (TYR) Outline Drawings A81-1 Specifications”
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A81-1
/SMA81-1
A81-1
50-ohm
17TC/W
1-800-WJ1-4401
WJ-CA81-1
WJ-A81-1
612025
ja81
TRANSISTOR 2N 4401
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CA81
Abstract: SMA81 A81 DC
Text: A81 / SMA81 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >30 dB TYP. HIGH GAIN: 26 dB (TYP.) HIGH LEVEL OUTPUT: +17 dBm (TYP.) LOW NOISE: 2.6 dB (TYP.) Description The A81 RF amplifier is a discrete hybrid design, which uses
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SMA81
MIL-STD-883
CA81
SMA81
A81 DC
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A81 DC
Abstract: No abstract text available
Text: Cascadable Amplifier 20 to 250 MHz A81/ SMA81 V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >30 dB TYP. HIGH GAIN: 26 dB (TYP.) HIGH LEVEL OUTPUT: +17 dBm (TYP.) LOW NOISE: 2.6 dB (TYP.) Description The A81 RF amplifier is a discrete hybrid design, which uses
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SMA81
MIL-STD-883
SMA81rized
A81 DC
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Transistor BC 227
Abstract: No abstract text available
Text: u jU A81-2/SMA81-2 20 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ + 15 VDC (TYP.) LOW NOISE 2.9 dB (TYP.) HIGH GAIN: >24.5 dB (TYP.) Outline Drawings A81-2
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A81-2/SMA81-2
A81-2
1-800-WJ1-4401
Transistor BC 227
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A81-3
Abstract: CA81-3 SMA81-3 A81 DC
Text: A81-3 / SMA81-3 Cascadable Amplifier 20 to 500 MHz Rev. V2 Features • • • • Product Image HIGH REVERSE ISOLATION >35 dBm TYP. EXCEPTIONAL OUTPUT VSWR 1.1:1 (TYP.) LOW NOISE 3.6 dB (TYP.) MEDIUM OUTPUT LEVEL +8.0 dBm (TYP.) Description The A81-3 RF amplifier is a discrete hybrid design, which uses
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A81-3
SMA81-3
MIL-STD-883
CA81-3
SMA81-3
A81 DC
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A81-3
Abstract: CA81-3 SMA81-3
Text: Cascadable Amplifier 20 to 500 MHz A81-3/ SMA81-3 V2 Features • • • • Product Image HIGH REVERSE ISOLATION >35 dBm TYP. EXCEPTIONAL OUTPUT VSWR 1.1:1 (TYP.) LOW NOISE 3.6 dB (TYP.) MEDIUM OUTPUT LEVEL +8.0 dBm (TYP.) Description The A81-3 RF amplifier is a discrete hybrid design, which uses
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A81-3/
SMA81-3
A81-3
MIL-STD-883
CA81-3
SMA81-3
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Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 20 to 500 MHz A81-2/ SMA81-2 V3 Features • • • • Product Image HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ +15 Vdc (TYP.) LOW NOISE 2.9 dB (TYP.) HIGH GAIN: >24.5 dB (TYP.) Description The A81-2 RF amplifier is a discrete hybrid design, which uses
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A81-2/
SMA81-2
A81-2
MIL-STD-883
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A81-2
Abstract: CA81-2 SMA81-2
Text: A81-2 / SMA81-2 Cascadable Amplifier 20 to 500 MHz Rev. V3 Features • • • • Product Image HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ +15 Vdc (TYP.) LOW NOISE 2.9 dB (TYP.) HIGH GAIN: >24.5 dB (TYP.) Description The A81-2 RF amplifier is a discrete hybrid design, which uses
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A81-2
SMA81-2
MIL-STD-883
CA81-2
SMA81-2
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Q69-X152
Abstract: a81smd A80-A600X Q69-X238 Q69-X138 a250 a81s A80-C90X EPCOS 600 04 O EPCOS 90 05 0
Text: 2-Elektroden-Ableiter 2-Electrode Arresters A8 Serie/Series Heavy-Duty-Typen / Heavy-Duty Types 20 kA / 20 A • Ø 8 x 6 mm A80-… A81-… A81-…SMD ø1 _ 0,3 ø8 +0,1 60+4 6,05±0,2 RAB0177-2 _ 0,3 ø8 +0,1 8,5±0,3 _ 0,15 6,05 +0,2 6,05±0,2 9±0,3 45˚±3˚
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RAB0177-2
RAB0166-L
RAB0004-Q
A80-C90X
Q69-X141
A80-A230X
Q69-X224
A80-A250X
Q69-X292
A80-A350X
Q69-X152
a81smd
A80-A600X
Q69-X238
Q69-X138
a250
a81s
A80-C90X
EPCOS 600 04 O
EPCOS 90 05 0
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a600
Abstract: A81-A600XG B88069X2990T502
Text: Surge Arrester 2-Electrode-Arrester A81-A600XG Ordering code: B88069X2990T502 DC spark-over voltage 1 2) 600 ± 20 V % < 1100 < 950 V V < 1400 < 1100 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20
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A81-A600XG
B88069X2990T502
57845/VDE0845
a600
A81-A600XG
B88069X2990T502
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IEC 60068-1
Abstract: A81-A150X B88069X2840S102
Text: Surge Arrester 2-Electrode-Arrester A81-A150X Ordering code: B88069X2840S102 DC spark-over voltage 1 2) 150 ± 20 V % < 500 < 450 V V < 600 < 550 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20 25
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A81-A150X
B88069X2840S102
57845/VDE0845
IEC 60068-1
A81-A150X
B88069X2840S102
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Untitled
Abstract: No abstract text available
Text: Surge Arrester 2-Electrode-Arrester A81-A600XG Ordering code: B88069X2990T502 DC spark-over voltage 1 2) 600 ± 20 V % < 1100 < 950 V V < 1400 < 1100 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20
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A81-A600XG
B88069X2990T502
57845/VDE0845
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EPCOS 230 06 O
Abstract: A81-A230X B88069X2250S102
Text: Surge Arrester 2-Electrode-Arrester A81-A230X Ordering code: B88069X2250S102 DC spark-over voltage 1 2) 230 ± 20 V % < 500 < 450 V V < 650 < 550 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20 25
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A81-A230X
B88069X2250S102
57845/VDE0845
EPCOS 230 06 O
A81-A230X
B88069X2250S102
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EPCOS 600 06 O
Abstract: IEC-60286-3 transistor smd marking KA smd A81 smd marking blue iec 60286 SMD MARKING CODE SMD MARKING CODE transistor smd transistor AB Datasheet A81-C90XSMD
Text: Surge Arrester 2-Electrode-Arrester A81-C90XSMD Ordering code: B88069X1370T352 DC spark-over voltage 1 2) 90 ± 20 V % < 500 < 450 V V < 600 < 550 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) Single impulse discharge current
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A81-C90XSMD
B88069X1370T352
EPCOS 600 06 O
IEC-60286-3
transistor smd marking KA
smd A81
smd marking blue
iec 60286
SMD MARKING CODE
SMD MARKING CODE transistor
smd transistor AB Datasheet
A81-C90XSMD
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A81-C90X
Abstract: B88069X1380S102
Text: Surge Arrester 2-Electrode-Arrester A81-C90X Ordering code: B88069X1380S102 DC spark-over voltage 1 2) 90 ± 20 V % < 500 < 450 V V < 600 < 550 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) Single impulse discharge current
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A81-C90X
B88069X1380S102
57845/VDE0845
A81-C90X
B88069X1380S102
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EPCOS 230 05 O
Abstract: A81-A230X B88069X2250S102
Text: Surge Arrester 2-Electrode-Arrester A81-A230X Ordering code: B88069X2250S102 DC spark-over voltage 1 2) 230 ± 20 V % < 500 < 450 V V < 650 < 550 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20 25
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A81-A230X
B88069X2250S102
57845/VDE0845
EPCOS 230 05 O
A81-A230X
B88069X2250S102
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A81-A800XP
Abstract: Arresters B88069X57
Text: Surge arrester 2-electrode arrester Series/Type: Ordering code: A81-A800XP B88069X5701S102 Version/Date: Version: Issue 02 / 2008-01-17 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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A81-A800XP
B88069X5701S102
A81-A800XP
Arresters
B88069X57
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Untitled
Abstract: No abstract text available
Text: Surge arrester 2-electrode arrester Series/Type: Ordering code: A81-A600XG B88069X2990T502 Version/Date: Version: Issue 03 / 2009-11-12 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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A81-A600XG
B88069X2990T502
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Untitled
Abstract: No abstract text available
Text: BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE
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BAS19
BAS20
BAS21
BAS19
100fi
BAS20
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