Marking A7
Abstract: No abstract text available
Text: Material Declaration M8-1-XXXJ Part Name Total mass: Breakdown of component Substrate Material Name Alumina 0.380g Weight mg 124.7 Conformal Coated SIP Thick Film Resistor Array Thick film Metals and Oxides 6.1 Conformal coat and Marking Epoxy / Acrylic
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17-Jan-2007
Marking A7
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Untitled
Abstract: No abstract text available
Text: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMediaTM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia
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K9S3208V0A-SSB0
SMFV004A
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Untitled
Abstract: No abstract text available
Text: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia
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K9S2808V0A-SSB0
SMFV016A
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SmartMedia Logical Format
Abstract: marking 73H K9S2808V0A K9S2808V0A-SSB0 K9S5608V0M SMFV016A
Text: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia
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K9S2808V0A-SSB0
SMFV016A
SmartMedia Logical Format
marking 73H
K9S2808V0A
K9S2808V0A-SSB0
K9S5608V0M
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SmartMedia Logical Format
Abstract: date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format ID maker code SmartMedia Physical Format
Text: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia
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K9S3208V0A-SSB0
SMFV004A
SmartMedia Logical Format
date code body marking samsung
date code marking samsung
K9S3208V0A
K9S3208V0A-SSB0
SmartMedia Logical Format ID maker code
SmartMedia Physical Format
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l101cxxx
Abstract: L101S 7631-86-9
Text: Material Declaration L101CXXX LF Total mass: 0.490g Weight mg Part Name Breakdown of component Material Name RoHS Compliant Substrate Alumina 157.7 Thick film Metals and Oxides 7.82 Conformal Coated SIP Thick Film Resistor Array Conformal coat and Marking
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L101CXXX
10-Jan-2006
L101S
7631-86-9
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Untitled
Abstract: No abstract text available
Text: FLASH AS8FLC2M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact Factory Package Ceramic Quad Flat Pack Ceramic Hex Inline Pack MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 78 13 57 14 76 15 55 16 54
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AS8FLC2M32
MIL-PRF-38534,
64Kbyte
AS8FLC2M32B
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Flash
Abstract: AS8FLC2M32 we3 marking AS8FLC2M32BQ
Text: FLASH AS8FLC2M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact Factory Package Ceramic Quad Flat Pack Ceramic Hex Inline Pack MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 78 13 57 14 76 15 55 16 54
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AS8FLC2M32
MIL-PRF-38534,
64Kbyte
AS8FLC2M32B
Flash
AS8FLC2M32
we3 marking
AS8FLC2M32BQ
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A20-A11
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC2M32
I/O16
I/O17
A20-A11
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AS8FLC2M32
Abstract: A3760 A20-A11 HIP-66
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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AS8FLC2M32
100ns
120ns
I/O14
I/O15
I/O19
I/O20
I/O21
I/O22
I/O23
AS8FLC2M32
A3760
A20-A11
HIP-66
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AS8FLC2M32
Abstract: A3760
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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AS8FLC2M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
AS8FLC2M32
A3760
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SMD MARKING CODE WE3
Abstract: 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX
Text: FLASH AS8FLC1M32 • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10 I/O11
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AS8FLC1M32
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
I/O17
I/O18
SMD MARKING CODE WE3
5962-0920503HXA
A18 marking
A3760
5962-0920502HYA
5962-0920503HX
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Untitled
Abstract: No abstract text available
Text: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10
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AS8FLC1M32
MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32B
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MT4C1259
Abstract: No abstract text available
Text: MT4C1259 883C 256K x 1 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 256K x 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin LCC 16-Pin DIP (D-2) 2 /W/E /R/A/S NC AD AZ MARKING • Timing 100ns access 120ns access
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MT4C1259
MIL-STD-883
18-Pin
150mW
256-cycle
16-Pin
MIL-STD-883
DS000015
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MICRON BGA PART MARKING
Abstract: RTT120 MT44K64M18 MT44K RLDRAM 3 MT44K32M36
Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)
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MT44K64M18
MT44K32M36
576Mb
MT44K32M18
MT44K64M18
MT44K32M36.
MT44K32M36RCT-125
MICRON BGA PART MARKING
RTT120
MT44K
RLDRAM 3
MT44K32M36
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rkm 33 transistor
Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
IMH11A
IMH14A
IMH15A
rkm 33 transistor
g1k bc848b
rkm transistor
DTB133HKA
DTD133HKA
MMST8598
TRANSISTOR MARKING CODE R2A
rkm 35 transistor
2SA1885
marking W8 transistor
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MT44K32M36
Abstract: No abstract text available
Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns (RL3-1600) – 1.25ns and tRC (MIN) = 12ns
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MT44K64M18
MT44K32M36
168-ball
RL3-1600)
576Mb
09005aef84ebb323
MT44K32M36
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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MICRON BGA PART MARKING
Abstract: MT44K64M18 MT44K32M36 RTT120 micron power 120w MT44K
Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)
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MT44K64M18
MT44K32M36
576Mb
MT44K32M18
MT44K64M18
MT44K32M36.
MT44K32M36RCT-125
MICRON BGA PART MARKING
MT44K32M36
RTT120
micron power 120w
MT44K
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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sod-23
Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Text: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C
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BAV70
OT-23
OD-23
BAW56
BAV70
BAV99
sod-23
diode sod23
SOD 23
marking a7
SOD23
marking A4
marking A1
diode marking a4
MARKING A4 transistor
SILICON SWITCHING DIODE
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Untitled
Abstract: No abstract text available
Text: SUPERSEDED BY MT58LC64K18D8 I^IICRDN 64K OPTIONS A6 A7 CE# CE2 NC NC WEH# WEL# CE2# Vcc Vss CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 100-Pin TQFP SA-1 RRRRRRRRRRRRRRRRRRRR • Packages 100-pin TQFP VccQ ra n DQ12 vcc Vcc Nc Œ c n en c n c n DQ13 DQ14 VccQ
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OCR Scan
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MT58LC64K18D8
100-Pin
160-PIN
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MT9068
Abstract: 30-pin SIMM 64k 30-pin SIMM 64k X 8 30-pin SIMM
Text: V IIC Z R O N MT9068 DRAM MODULE 64K PIN ASSIGNMENT (Top View Vcc CÄS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 NC NC NC OQ6 W Vss DQ7 NC DQ8 09 RÄ5 CÄS9 D9 Vcc MARKING • Timing 80ns access 100ns access 120ns access 150ns access -15 • Packages:
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MT9068
30-pin
450mW
MT9068
30-pin SIMM
64k 30-pin SIMM
64k X 8 30-pin SIMM
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MT9259
Abstract: 1259EJ
Text: I^ IIC Z R O N MT9259 256K X 9 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vdd CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PHD DQ8 09 RAS CSS9 D9 Vdd MARKING • Timing 80ns access 100ns access 120ns access 150ns access
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MT9259
30-pin
135mW
1350mW
MT9259
1259EJ
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