cortex-a5 processor
Abstract: cortex-a5 integration manual ARM DII 0020 ATID cortex-a5 ID072410
Text: CoreSight ETM -A5 ™ Revision: r0p1 Technical Reference Manual Copyright 2009, 2010 ARM. All rights reserved. ARM DDI 0435B ID072410 CoreSight ETM-A5 Technical Reference Manual Copyright © 2009, 2010 ARM. All rights reserved. Release Information
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0435B
ID072410)
ID7/24/10
cortex-a5 processor
cortex-a5 integration manual
ARM DII 0020
ATID
cortex-a5
ID072410
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel LMBD2838LT1G MA6 3000/Tape&Reel LMBD2838LT3G
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LMBD2837LT1G
LMBD2838LT1G
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT3G
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cortex-a5 integration manual
Abstract: cortex-a5 ATID Coresight cortex-a5 processor "coresight design kit" tsva cortex-a5tm
Text: CoreSight ETM -A5 ™ Revision: r0p2 Technical Reference Manual Copyright 2009, 2010 ARM. All rights reserved. ARM DDI 0435C ID101810 CoreSight ETM-A5 Technical Reference Manual Copyright © 2009, 2010 ARM. All rights reserved. Release Information
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0435C
ID101810)
ID10/18/10
cortex-a5 integration manual
cortex-a5
ATID
Coresight
cortex-a5 processor
"coresight design kit"
tsva
cortex-a5tm
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Advance Information VF6xx, VF5xx, VF3xx Features • Operating characteristics – Voltage range 3 V to 3.6 V – Temperature range ambient -40 °C to 85 °C • ARM Cortex A5 Core features – Up to 500 MHz ARM Cortex A5
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cortex-a5 processor
Abstract: embedded trace macrocell cortex-a5 integration manual ATID AMBA AXI to APB BUS Bridge
Text: CoreSight ETM -A5 ™ Revision: r0p0 Technical Reference Manual Copyright 2009 ARM. All rights reserved. ARM DDI 0435A ID012010 CoreSight ETM-A5 Technical Reference Manual Copyright © 2009 ARM. All rights reserved. Release Information The following changes have been made to this book.
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ID012010)
ID1/20/10
cortex-a5 processor
embedded trace macrocell
cortex-a5 integration manual
ATID
AMBA AXI to APB BUS Bridge
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Untitled
Abstract: No abstract text available
Text: A5-6 / SMA5-6 Cascadable Amplifier 5 to 600 MHz Rev. V3 Features Product Image • FLAT BANDWIDTH: ±.2 dB TYP. • LOW VSWR: 1.3:1 (TYP.) • WIDE POWER SUPPLY RANGE: +8 to +15 VOLTS Description The A5-6 RF amplifier is a discrete hybrid design, which uses
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MIL-STD-883
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a56 transistor
Abstract: No abstract text available
Text: A5-6 / SMA5-6 Cascadable Amplifier 5 to 600 MHz Rev. V3 Features Product Image • FLAT BANDWIDTH: ±.2 dB TYP. • LOW VSWR: 1.3:1 (TYP.) • WIDE POWER SUPPLY RANGE: +8 to +15 VOLTS Description The A5-6 RF amplifier is a discrete hybrid design, which uses
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MIL-STD-883
a56 transistor
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data VF6xx, VF5xx, VF3xx Features • Operating characteristics – Voltage range 3 V to 3.6 V – Temperature range ambient -40 °C to 85 °C • ARM Cortex A5 Core features – Up to 500 MHz ARM Cortex A5 – 32 KB/32 KB I/D L1 Cache
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data VF3xxR, VF5xxR Features • Operating characteristics – Voltage range 3 V to 3.6 V – Temperature range ambient -40 °C to 85 °C • ARM Cortex A5 Core features – Up to 400 MHz ARM Cortex A5 – 32 KB/32 KB I/D L1 Cache
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Untitled
Abstract: No abstract text available
Text: A5 / SMA5 Cascadable Amplifier 5 to 500 MHz Rev. V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT FLAT BANDWIDTH ±.2 dB TYP. LOW VSWR <1.2:1 INPUT, <1.5:1 OUTPUT (TYP.) WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Description The A5 RF amplifier is a discrete hybrid design, which uses
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MIL-STD-883
MAAM-008713-00SMA5
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Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 5 to 500 MHz A5 / SMA5 V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT FLAT BANDWIDTH ±.2 dB TYP. LOW VSWR <1.2:1 INPUT, <1.5:1 OUTPUT (TYP.) WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Description The A5 RF amplifier is a discrete hybrid design, which uses
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Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 5 to 600 MHz A5-6 / SMA5-6 V3 Features Product Image • FLAT BANDWIDTH: ±.2 dB TYP. • LOW VSWR: 1.3:1 (TYP.) • WIDE POWER SUPPLY RANGE: +8 to +15 VOLTS Description The A5-6 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and
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MIL-STD-883
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octal priority encoder
Abstract: No abstract text available
Text: 00 Cat.Book Page 17 Friday, June 13, 1997 12:49 PM CA82C37A PROGRAMMABLE DMA CONTROLLER IOR A6 A5 A4 EOP 43 42 41 40 IOW A7 1 2 44 NC MEMR 3 READY MEMW 4 A6 A5 A4 EOP A3 A2 5 A7 NC 7 39 A3 NC 8 38 A2 37 A1 36 A0 35 VDD 34 DB0 33 DB1 HLDA 9 A1 A0 V DD ADSTB
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CA82C37A
8237/8237A
CA82C37A
CA82C84A
82C82
80C88
octal priority encoder
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMA5N dual digital transistors PNP+PNP SOT-353 FEATURES z Two DTA123J chips in a package Marking: A5 1 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol
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OT-353
OT-353
DTA123J
-10mA
100MHz
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SH-31R
Abstract: SH-33R transistor 372 SSA5 SH-32R SH-21 SH-72
Text: PHOTOELECTRIC SENSORS SS-A5 MS-AJ Sensor Mounting Stand Amplifier-separated Manual Sensitivity Setting Photoelectric Sensor VF NX5 Multi-voltage Type PM2 Micro PM Twin Adjuster Enables Delicate Sensitivity Setting Twin Adjuster Automatic Interference Prevention
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2-M30
SH-31R
SH-33R
transistor 372
SSA5
SH-32R
SH-21
SH-72
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BC807-16
Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
Text: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage
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BC807-16/-25/40
OT-23
Group-16
BC807-16
BC807-16LT1
BC807-25LT1
BC807-40LT1
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DTA143
Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
Text: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO
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OT-23
Group-16
-100mA
-300mA
-500mA,
-10mA
50MHz
DTA143
marking a5
5B marking transistor
A5 transistors sot-23
5C TRANSISTOR MARKING
CBO 40V CEO 25V EBO 5V
transistor marking A5
a5 marking
transistor 5b
5b transistor
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WJA5
Abstract: WJ-a5
Text: WJ-A5-6 / SMA5-6 1 5 to 600 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT FLAT BANDWIDTH: ±.2 dB TYP. LOW VSWR: 1.3:1 (TYP.) WIDE POWER SUPPLY RANGE: +8 TO +15 VOLTS Outline Drawings A5-6 Specifications51 Characteristics Typical
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WJA5
Abstract: WJ-A5
Text: WJ-A5/SMA5 5 to 500 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ FLAT BANDWIDTH: +.2 dB TYP. ♦ LOW VSWR: < 1.2:1 INPUT, <1.5:1 OUTPUT (TYP.) ♦ WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Outline Drawings A5 0.450 n (11.41) t Specifications’*
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50-ohm
WJA5
WJ-A5
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transistor marking A5
Abstract: No abstract text available
Text: UMA5N FMA5A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units: mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages UMA5N (UMT5) package marking: UMA5N and FMA5A; A5 package contains two interconnected PNP digital transistors (DTA123JKA)
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SC-74A)
DTA123JKA)
SC-70)
SC-59)
-100nA
transistor marking A5
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2SC309
Abstract: 2SC3098 uPI Semiconductor
Text: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + a5 2.5 —0.3 • Low Noise Figure. . NF = 2.5dB, |S2lel2 —14.5dB f = 500MHz . NF = 3.0dB, |S2iel2 —9.0dB (f = 1GHz)
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2SC3098
500MHz)
SC-59
2SC309
2SC3098
uPI Semiconductor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vds 1000 V Id 2.3 A ^DS on Package Ordering Code 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Values
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O-220
C67078-A1307-A5
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BUZ11S2
Abstract: buz11 siemens
Text: SIEMENS BUZ11S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs to ^JS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 £2 TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Continuous drain current
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BUZ11S2
O-220
C67078-S1301-A5
BUZ11
BUZ11S2
buz11 siemens
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FESS 006
Abstract: 351-07 A1307 C67078-A1307-A5 M20D buz 353 siemens 350 98 O
Text: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vbs 1000 V b wDS on Package Ordering Code 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vtis Drain-gate voltage ^DGR Values
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O-220
C67078-A1307-A5
fl235b05
AE35b05
FESS 006
351-07
A1307
C67078-A1307-A5
M20D
buz 353
siemens 350 98 O
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