A400TD Search Results
A400TD Price and Stock
Vishay Semiconductors GA400TD25SIGBT MOD 250V 400A INT-A-PAK |
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GA400TD25S | Tube | 10 |
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Vishay Semiconductors VS-GA400TD60SIGBT MOD 600V 750A INT-A-PAK |
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VS-GA400TD60S | Bulk |
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Micron Technology Inc MTFDHBA400TDG-1AW1ZABYYSSD 400GB M.2 TLC NVME 3.3V |
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MTFDHBA400TDG-1AW1ZABYY | Bulk |
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MTFDHBA400TDG-1AW1ZABYY | Bulk | 10 |
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MTFDHBA400TDG-1AW1ZABYY | 10 |
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Micron Technology Inc MTFDHBA400TDG-2AW1ZABYYSSD |
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MTFDHBA400TDG-2AW1ZABYY | Bulk |
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Micron Technology Inc MTFDHBA400TDG-1AW4ZABYYSSD 400GB M.2 TLC NVME 3.3V |
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MTFDHBA400TDG-1AW4ZABYY | Bulk |
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MTFDHBA400TDG-1AW4ZABYY | Bulk | 10 |
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MTFDHBA400TDG-1AW4ZABYY | 10 |
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A400TD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: I , ,• I In te rn a tio n a l IQ R R ectifier PD -5.05S preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK G A400TD 60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 |
OCR Scan |
A400TD | |
Contextual Info: International I R Rectifi G f PD - 5.059B P R E LIM IN A R Y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK A400TD60U Ultra-Fast Speed IGBT Features V c e s = 6 00 V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200 |
OCR Scan |
GA400TD60U | |
CY7C1011-20VCContextual Info: CY7C1011 1 2 8 K x 1 6 Static RAM BLE is LOW, then data from I/O pins (l/O 0 through l/0 7), is written into the location specified on the address pins (A 0 through A 16). If byte high enable (BHE) is LOW, then data from I/O pins (l/ 0 8 through l/0 15) is written into the location speci |
OCR Scan |
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irf p 1806Contextual Info: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK A400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 |
OCR Scan |
GA400TD60U irf p 1806 |