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    A331 TRANSISTOR Search Results

    A331 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    A331 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1862

    Abstract: 2SA1807 A343
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307


    Original     		2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1862 2SA1807 A343 PDF

    2SA1807

    Abstract: A331 2SA1862 96-109-A343
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors Packages 45


    Original     		2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1807 A331 2SA1862 96-109-A343 PDF

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


    Original     		2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V PDF

    2SA1807

    Abstract: A343 2SA1862
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


    Original     		2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1807 A343 2SA1862 PDF

    TRANSISTOR A331

    Abstract: No abstract text available
    Text: Cascadable Amplifier 2 to 2400 MHz A33-1/ SMA33-1 V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing


    Original     		A33-1/ SMA33-1 A33-1 MIL-STD-883 TRANSISTOR A331 PDF

    TRANSISTOR A331

    Abstract: A331 transistor A33-1 CA33-1 SMA33-1 ON A33
    Text: A33-1 / SMA33-1 Cascadable Amplifier 2 to 2400 MHz Rev. V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing


    Original     		A33-1 SMA33-1 MIL-STD-883 TRANSISTOR A331 A331 transistor CA33-1 SMA33-1 ON A33 PDF

    A331 transistor

    Abstract: No abstract text available
    Text: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)


    Original     		A33-1/SMA33-1 50-ohm A33-1 SMA33-1 CA33-1 A331 transistor PDF

    TRANSISTOR A331

    Abstract: A33-1 CA33-1 SMA33-1
    Text: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)


    Original     		A33-1/SMA33-1 A33-1 SMA33-1 CA33-1 TRANSISTOR A331 A33-1 CA33-1 SMA33-1 PDF

    capacitor ase 104

    Abstract: Z808 w188 trimm resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.


    OCR Scan     		MRF6404 DCS1800 1900/Cellular MRF6404K Collector-E100A MRF6404K capacitor ase 104 Z808 w188 trimm resistor PDF

    RF640

    Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz


    OCR Scan     		MRF6404 DCS1800 PCS1900/Cellular MRF6404K RF6404 RF6404K F6404 MRF6404K RF640 ez808 transistor b 745 capacitor 104 Z5 R/Vitramon PDF

    11Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4 PDF

    TRANSISTOR A331

    Abstract: 395C-01
    Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 DCS1800 PCS1900/Cellular TRANSISTOR A331 395C-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: u u U A33-1 / SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications’* Characteristics Frequency (Min.) Small Signal Gain (Min.)


    OCR Scan     		A33-1 SMA33-1 A33-1 50-ohm 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to


    OCR Scan     		MRF6404/D PDF

    TRANSISTOR A331

    Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		MRF6404/D MRF6404 MRF6404K MRF6404 DCS1800 PCS1900/Cellular MRF6404/D* TRANSISTOR A331 transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC PDF

    capacitor 104 Z5

    Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular capacitor 104 Z5 resistor A331 TRANSISTOR A331 A153 A331 motorola 572 transistor 150 watts power amplifier layout ATC 100A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular PDF

    37281

    Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular 37281 TRANSISTOR A331 transistor 31C resistor A331 A153 A331 PDF

    MAAM-008863

    Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
    Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America


    Original     		40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer PDF

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter PDF

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


    Original     		PDF

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


    Original     		PDF

    Y00308

    Abstract: 8003 qualcomm 1110
    Text: DSP56800E 16-Bit Digital Signal Processor Core Reference Manual DSP56800ERM/D Rev. 2.0, 12/2001 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any


    Original     		DSP56800E 16-Bit DSP56800ERM/D Y00308 8003 qualcomm 1110 PDF

    DSP56800E 16-Bit Digital Signal Processor Core Reference Manual

    Abstract: hEX INVERTER DSP56800 DSP56800E motorola K 626 QUALCOMM Reference manual block diagram of qualcomm
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56800E 16-Bit Digital Signal Processor Core Reference Manual DSP56800ERM/D Rev. 2.0, 12/2001 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.


    Original     		DSP56800E 16-Bit DSP56800ERM/D DSP56800E DSP56800E 16-Bit Digital Signal Processor Core Reference Manual hEX INVERTER DSP56800 motorola K 626 QUALCOMM Reference manual block diagram of qualcomm PDF