A21 EEPROM Search Results

28256 eeprom

Abstract: DS1235Y
Contextual Info: 0S1235Y/AB DALLAS DS1235Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc A141 1 A121 2 A71 3 A61 4 AS 1 5 A41 6 A31 7 A21 8 A11 9 AO1 10 DQO1 11 OQ1 1 12 DQ2 1 13 GND1 14 • Data is automatically protected during power

403A-03

Abstract: so20w CR0805 AD11 AD30
Contextual Info: P3V VIO P1 P2 PCI_5V A1 1 P3V VIO VIO A2 2 +12V_PCI A3 3 TCK TDO A5 5 5 B5 A6 6 6 B6 INTA# A7 7 X7 1 A8 8 A9 9 X11 1 X12 X10 X50 C3 0.01 CC0805 2 2 CC0805 16 B16 17 B17 GNT# 18 B18 REQ# 19 B19 PME# A20 20 20 B20 AD31 AD30 A21 21 21 B21 AD29 A22 22 22 B22 AD28

PU27

Abstract: 29lv800bb PAL16V8 PU22 MCF5206eFT samtec connector ipl1 simm 72pin PU10 SPR10 SPR11
Contextual Info: A A[0.23] B C D E A[0.23] J1 J2 4 4 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 3 A16 A17 A18 A19 A20 A21 A22 A23 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33

Contextual Info: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a

810B1

Abstract: 20-FFH A1286-2 811b1 CRD-68P-M17 2 M flash memory 812b2
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30336-2E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A809Bx-/810Bx-/811Bx-/812Bx-25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A812Bx are Flash electrically erasable and

Contextual Info: TOSHIBA TC58V32AFT/ADC TO SH IBA M OS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32AFT/ADC device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.

F150 regulator

Abstract: PQFP100
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD DATA BRIEFING • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)

810B

Contextual Info: MEMORY • IS MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE ■ DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and programmable Flash memory cards capable of storing and. retrievin^siarge amounts of data. The memory

29f400

Contextual Info: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a

Contextual Info: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a

20A1

Abstract: fujitsu PCMCIA flash
Contextual Info: œ FUJITSU DATASHEET: MB98A8092X- / 8102x- / 8112x- / 8122x-25 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1M / 2M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are Flash electrically eraseable and programmable Flash memory cards capable of

seiko epson RAM IC MEMORY CARD "40 pin"

Abstract: mask rom MRC1281 a21 eeprom
Contextual Info: MASK ROM OUTLINE The MASK ROM IC MEMORY CARD series is made up of Masked ROM chips. The memory sizes available are from 128K Bytes to 4M Bytes. IE series is 8 bit wide data bus. VARIATION Part Number MRC1281 ECO MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0

TCP 8126

Contextual Info: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are

fujitsu PCMCIA flash

Contextual Info: •T o T o p f tìm u p i In d e x MEMORY ÌBI S MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and

d666

Abstract: CRX14 STM1404 st nand flash application note firmware cash register JTCK STEVAL-IPC001V1 STR710FZ2 A6 P113
Contextual Info: STEVAL-IPC001V1 Electronic fiscal cash register Data Brief Features • 4-Mbyte Flash, 32-Mbyte NAND and 1-Mbyte SRAM on board ■ Two smartcard readers ■ STM1404 secure chip, FIPS 140-2 compliant ■ Ethernet 10Base-T, 3 UARTs, 1 RS-485, 1 PS/ 2, 1 USB full speed, 4 x I2C, 1 x SPI, 2 LCDs

Contextual Info: March 1994 Edition 1.0 FUJITSU DATA SHEET MB98A 8113X-/8 123x- / 8 1 33x- / 8 143x-20 FLASH MEMORY CARD FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 2M / 4M / 8M / 1 6M-BYTE The Fujitsu MB98A8113x, MB98A8123x, MB98A8133x and MB98A8143x are electrically erasable and programmable Flash memory cards capable of storing

CPA4

Abstract: Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17
Contextual Info: ASSP CMOS DK86967 Users Guide Table of Contents List of Figures Introduction .3 Design Kit DK86967-ISA Schematic .3 Board Configurations .5

MB98A81331

Abstract: CRD-68P-M05
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30326-1E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A8113x-/8123x-/8133x-/8143x-20 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 2 M/4 M/8 M/16 M-BYTE • DESCRIPTION The Fujitsu MB98A8113x, MB98A8123x, MB98A8133x and MB98A8143x are electrically erasable and

INDEPENDENT INK 73X

Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
Contextual Info: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features

D1651

Abstract: 2A084 D1229 84FV256006
Contextual Info: Issue 5.1 April 2001 Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M x 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

84FV

Abstract: PUMA84
Contextual Info: Issue 5.0 November 1999 Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and

84F25

Contextual Info: Issue 5.0 January 2000 Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and

Contextual Info: 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)