Untitled
Abstract: No abstract text available
Text: R a tin g U n it Sym bol Value C o lle cto r-E m itte r Voltage v CEO 40 Vdc Collector-B ase V o ltage VCBO 75 Vdc Em itter-B ase V o ltage v EBO 6.0 Vdc C o lle ctor C u rrent — C ontinuous >C 600 m A dc T otal Device D issipa tion a1T a = 25°C Derate abo ve 25°C
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2N4931
Abstract: No abstract text available
Text: M A X IM U M R A TIN G S Symbol 2N4931 Unit C o lle cto r-E m itte r Voltage Rating v CEO - 250 Vdc Collector-Base V o ltage VCBO -2 5 0 Vdc Em itter-B ase V o ltage vebo - 4 .0 Vdc C o llector C u rrent — C o ntin uous •c -5 0 m A dc T otal Device D issipation a1T a = 25°C
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2N4931
2N4931
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A1t smd
Abstract: SMD a1T Transistor smd diode A1T A1T SMD diode A1t smd transistor marking A1t a1t diode smd A1t A1t marking diode a1t marking
Text: Diodes SMD Type High-Speed Double Diode Array BAW56S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 Small plastic SMD package 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.95-0.05 Repetitive peak forward current:max. 450 mA.
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BAW56S
OT-363
A1t smd
SMD a1T Transistor
smd diode A1T
A1T SMD diode
A1t smd transistor
marking A1t
a1t diode
smd A1t
A1t marking diode
a1t marking
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A1t smd
Abstract: smd diode A1T a1t diode a1t MARKING A1T SMD diode
Text: Product specification BAW56S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 Small plastic SMD package 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.95-0.05 Repetitive peak forward current:max. 450 mA.
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BAW56S
OT-363
A1t smd
smd diode A1T
a1t diode
a1t MARKING
A1T SMD diode
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating U nit Symbol Value Drain-Source Voltage Vd s s 240 V Drain-Gate Voltage Vd g r 60 V Gate-Source Voltage - Continuous -N on -re pe titive tp « 50 p.s Vg s Vg s m ±20 ±40 Vdc Vpk Id 200 mA 'd m 500 mA Pd 350 mW 2.8 mW/°C - °C Continuous Drain Current
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smd code A1t
Abstract: A1t smd smd diode A1T DIODE smd marking a1t 22 MGL159 A1t marking diode A1T SMD diode MARKING CODE A1T MSA370 BAW56S
Text: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAW56S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array
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MBD128
BAW56S
OT363
SC-88
smd code A1t
A1t smd
smd diode A1T
DIODE smd marking a1t 22
MGL159
A1t marking diode
A1T SMD diode
MARKING CODE A1T
MSA370
BAW56S
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Untitled
Abstract: No abstract text available
Text: Symbol Value Unit C o lle cto r-E m itte r V o lta g e v CEO 80 V dc C o lle c to r-B a s e V olta g e VCBO 80 Vdc Vdc Rating Em itte r-B a se V olta g e V e BO 5.0 C o lle c to r C urre n t — C o n tin u o u s •c 500 m Adc T o tal D evice D issip a tio n w
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A1t amplifier
Abstract: PQ7041
Text: M AXIM U M RATINGS Symbol MPQ7041 C o lle c to r-E m itte r V o lta g e v CEO 150 200 250 Vdc C o lle c to r-B a se V olta g e v CB O 150 200 250 Vdc E m itte r-B a se V o lta g e v EBO 5.0 Vdc •c 500 m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s
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MPQ7041
MPQ7042
MPQ7043
MPQ7043*
O-116
A1t amplifier
PQ7041
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A1T TRANSISTOR
Abstract: AD8538 A1t SOT23 AD8628 AD8629 AD8630 AD8638 AD5541 AD5542 AD8539
Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifier AD8638 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C Rail-to-rail output swing +16 V single- or ±8 V dual-supply operation High gain and CMRR: 133 dB typical High PSRR: 143 dB typical
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AD8638
OT-23
Prec8638ARZ1
AD8638ARZ-REEL1
AD8638ARZ-REEL71
A1T TRANSISTOR
AD8538
A1t SOT23
AD8628
AD8629
AD8630
AD8638
AD5541
AD5542
AD8539
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smd code A1t
Abstract: A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode DIODE smd marking a1t 22 a1t diode DIODE smd marking A1p A1t SOT23 DIODE smd marking A1t
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION • Small plastic SMD package
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M3D088
BAW56
BAW56
115002/00/03/pp12
smd code A1t
A1t smd
smd diode A1T
SMD a1T Transistor
A1T SMD diode
DIODE smd marking a1t 22
a1t diode
DIODE smd marking A1p
A1t SOT23
DIODE smd marking A1t
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Untitled
Abstract: No abstract text available
Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical
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AD8638/AD8639
AD8638
OT-23
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A1T TRANSISTOR
Abstract: AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639 A1t SOT23
Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical
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AD8638/AD8639
OT-23
AD8638
D06895-0-5/08
A1T TRANSISTOR
AD5541
AD8538
AD8539
AD8628
AD8629
AD8630
AD8638
AD8639
A1t SOT23
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a1t diode
Abstract: No abstract text available
Text: LVX138 gg National Semiconductor 74LVX138 Low Voltage 1-of-8 Decoder/Demultiplexer General Description Features The LVX138 is a high-speed 1-of-8 decoder/demultiplexer. This device is ideally suited for high-speed bipolar memory chip select address decoding. The multiple input enables
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LVX138
74LVX138
LVX138
1-of-24
1-of-32
Assignme19
a1t diode
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smd code A1t
Abstract: SMD a1T Transistor A1t smd A1t smd transistor smd diode A1T DIODE smd marking a1t 22 MSA370 BAW56S SMD A1t 44 A1T -14 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAW56S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array
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MBD128
BAW56S
SCA55
117027/00/02/pp12
smd code A1t
SMD a1T Transistor
A1t smd
A1t smd transistor
smd diode A1T
DIODE smd marking a1t 22
MSA370
BAW56S
SMD A1t 44
A1T -14 diode
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a1t diode
Abstract: A1T TRANSISTOR A1t 03 AD8639 a1y PACKAGE Thermopile Circuit AD5541 AD8538 MO-178-AA AD8628
Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical
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AD8638/AD8639
AD8639:
AD8638
OT-23
AD8639.
D06895-0-6/10
a1t diode
A1T TRANSISTOR
A1t 03
AD8639
a1y PACKAGE
Thermopile Circuit
AD5541
AD8538
MO-178-AA
AD8628
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a1T Transistor
Abstract: MO-229-WEED-4 AD8639ARZ1 A1t SOT23 a1t diode
Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical
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AD8638/AD8639
AD8638
OT-23
OT-23
AD8638/AD8639
a1T Transistor
MO-229-WEED-4
AD8639ARZ1
A1t SOT23
a1t diode
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Untitled
Abstract: No abstract text available
Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical
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AD8638/AD8639
AD8639:
AD8638
OT-23
D06895-0-6/10
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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a006 mosfet
Abstract: IH5106 a006
Text: . Intersil Hlgh-Rellablllty Product* IH5108 High Reliability 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for the HI508A and similar devices, but adds fault protection to
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IH5108
HI508A
IH5108s.
IHS108
a006 mosfet
IH5106
a006
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A1T TRANSISTOR
Abstract: TRANSISTOR A1t A1T -13 TRANSISTOR transistor A1t 02
Text: That HPAEW LETT WLEM CK A RD High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light
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HBCS-1100
A1T TRANSISTOR
TRANSISTOR A1t
A1T -13 TRANSISTOR
transistor A1t 02
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R 8-Channel/Dual 4-Channel CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The DG508A/DG509A are CMOS monolithic 8-channel and dual 4-channel analog multiplexers, which can also be used as demultiplexers. The DG508A uses 3 address inputs
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DG508A/DG509A
DG508A
DG509A
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IR LED and photodiode pair
Abstract: IR LED and photodiode PAIR DETECTOR HBCS-1100 kodak 6080 IPD5200
Text: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject
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T 427 transistor
Abstract: HBCS-1100 White Paint IR LED and photodiode pair kodak 6080 High Resolution Optical Reflective Sensor IR LED and photodiode PAIR DETECTOR
Text: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject
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HBCS-1100
HBCS-1100
T 427 transistor
White Paint
IR LED and photodiode pair
kodak 6080
High Resolution Optical Reflective Sensor
IR LED and photodiode PAIR DETECTOR
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