A1T DIODE Search Results

Contextual Info: R a tin g U n it Sym bol Value C o lle cto r-E m itte r Voltage v CEO 40 Vdc Collector-B ase V o ltage VCBO 75 Vdc Em itter-B ase V o ltage v EBO 6.0 Vdc C o lle ctor C u rrent — C ontinuous >C 600 m A dc T otal Device D issipa tion a1T a = 25°C Derate abo ve 25°C

2N4931

Contextual Info: M A X IM U M R A TIN G S Symbol 2N4931 Unit C o lle cto r-E m itte r Voltage Rating v CEO - 250 Vdc Collector-Base V o ltage VCBO -2 5 0 Vdc Em itter-B ase V o ltage vebo - 4 .0 Vdc C o llector C u rrent — C o ntin uous •c -5 0 m A dc T otal Device D issipation a1T a = 25°C

A1t smd

Abstract: SMD a1T Transistor smd diode A1T A1T SMD diode A1t smd transistor marking A1t a1t diode smd A1t A1t marking diode a1t marking
Contextual Info: Diodes SMD Type High-Speed Double Diode Array BAW56S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 Small plastic SMD package 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.95-0.05 Repetitive peak forward current:max. 450 mA.

A1t smd

Abstract: smd diode A1T a1t diode a1t MARKING A1T SMD diode
Contextual Info: Product specification BAW56S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 Small plastic SMD package 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.95-0.05 Repetitive peak forward current:max. 450 mA.

Contextual Info: MAXIMUM RATINGS Rating U nit Symbol Value Drain-Source Voltage Vd s s 240 V Drain-Gate Voltage Vd g r 60 V Gate-Source Voltage - Continuous -N on -re pe titive tp « 50 p.s Vg s Vg s m ±20 ±40 Vdc Vpk Id 200 mA 'd m 500 mA Pd 350 mW 2.8 mW/°C - °C Continuous Drain Current

smd code A1t

Abstract: A1t smd smd diode A1T DIODE smd marking a1t 22 MGL159 A1t marking diode A1T SMD diode MARKING CODE A1T MSA370 BAW56S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAW56S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array

Contextual Info: Symbol Value Unit C o lle cto r-E m itte r V o lta g e v CEO 80 V dc C o lle c to r-B a s e V olta g e VCBO 80 Vdc Vdc Rating Em itte r-B a se V olta g e V e BO 5.0 C o lle c to r C urre n t — C o n tin u o u s •c 500 m Adc T o tal D evice D issip a tio n w

A1t amplifier

Abstract: PQ7041
Contextual Info: M AXIM U M RATINGS Symbol MPQ7041 C o lle c to r-E m itte r V o lta g e v CEO 150 200 250 Vdc C o lle c to r-B a se V olta g e v CB O 150 200 250 Vdc E m itte r-B a se V o lta g e v EBO 5.0 Vdc •c 500 m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s

A1T TRANSISTOR

Abstract: AD8538 A1t SOT23 AD8628 AD8629 AD8630 AD8638 AD5541 AD5542 AD8539
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifier AD8638 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C Rail-to-rail output swing +16 V single- or ±8 V dual-supply operation High gain and CMRR: 133 dB typical High PSRR: 143 dB typical

smd code A1t

Abstract: A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode DIODE smd marking a1t 22 a1t diode DIODE smd marking A1p A1t SOT23 DIODE smd marking A1t
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION • Small plastic SMD package

Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

A1T TRANSISTOR

Abstract: AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639 A1t SOT23
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

a1t diode

Contextual Info: LVX138 gg National Semiconductor 74LVX138 Low Voltage 1-of-8 Decoder/Demultiplexer General Description Features The LVX138 is a high-speed 1-of-8 decoder/demultiplexer. This device is ideally suited for high-speed bipolar memory chip select address decoding. The multiple input enables

smd code A1t

Abstract: SMD a1T Transistor A1t smd A1t smd transistor smd diode A1T DIODE smd marking a1t 22 MSA370 BAW56S SMD A1t 44 A1T -14 diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAW56S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array

a1t diode

Abstract: A1T TRANSISTOR A1t 03 AD8639 a1y PACKAGE Thermopile Circuit AD5541 AD8538 MO-178-AA AD8628
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

a1T Transistor

Abstract: MO-229-WEED-4 AD8639ARZ1 A1t SOT23 a1t diode
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

a006 mosfet

Abstract: IH5106 a006
Contextual Info: . Intersil Hlgh-Rellablllty Product* IH5108 High Reliability 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for the HI508A and similar devices, but adds fault protection to

A1T TRANSISTOR

Abstract: TRANSISTOR A1t A1T -13 TRANSISTOR transistor A1t 02
Contextual Info: That HPAEW LETT WLEM CK A RD High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light

Contextual Info: S E M I C O N D U C T O R 8-Channel/Dual 4-Channel CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The DG508A/DG509A are CMOS monolithic 8-channel and dual 4-channel analog multiplexers, which can also be used as demultiplexers. The DG508A uses 3 address inputs

IR LED and photodiode pair

Abstract: IR LED and photodiode PAIR DETECTOR HBCS-1100 kodak 6080 IPD5200
Contextual Info: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject

T 427 transistor

Abstract: HBCS-1100 White Paint IR LED and photodiode pair kodak 6080 High Resolution Optical Reflective Sensor IR LED and photodiode PAIR DETECTOR
Contextual Info: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject