A1T -13 TRANSISTOR Search Results

A1t amplifier

Abstract: PQ7041
Contextual Info: M AXIM U M RATINGS Symbol MPQ7041 C o lle c to r-E m itte r V o lta g e v CEO 150 200 250 Vdc C o lle c to r-B a se V olta g e v CB O 150 200 250 Vdc E m itte r-B a se V o lta g e v EBO 5.0 Vdc •c 500 m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s

A1T TRANSISTOR

Abstract: AD8538 A1t SOT23 AD8628 AD8629 AD8630 AD8638 AD5541 AD5542 AD8539
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifier AD8638 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C Rail-to-rail output swing +16 V single- or ±8 V dual-supply operation High gain and CMRR: 133 dB typical High PSRR: 143 dB typical

Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

A1T TRANSISTOR

Abstract: AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639 A1t SOT23
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

A1T TRANSISTOR

Abstract: MO-229-WEED-4 AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

a1t diode

Abstract: A1T TRANSISTOR A1t 03 AD8639 a1y PACKAGE Thermopile Circuit AD5541 AD8538 MO-178-AA AD8628
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

a1T Transistor

Abstract: MO-229-WEED-4 AD8639ARZ1 A1t SOT23 a1t diode
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

marking PDT1

Abstract: 300MIL LM7006 LM7006H TD15 sanyo ccb chip 6 volt ldr
Contextual Info: Ordering num ber:E N 3035A ÑMOS LSI LM7006, 7006H Dual PLL Frequency Synthesizer Circuit Overview The LM7006, 7006II is a PLL Frequency Synthesizer circuit for use in cordless telephones. It incorpo­ rates separate programmable dividers, phase comparators and dual-gain charge pumps for the transm it

a006 mosfet

Abstract: IH5106 a006
Contextual Info: . Intersil Hlgh-Rellablllty Product* IH5108 High Reliability 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for the HI508A and similar devices, but adds fault protection to

A1T TRANSISTOR

Abstract: TRANSISTOR A1t A1T -13 TRANSISTOR transistor A1t 02
Contextual Info: That HPAEW LETT WLEM CK A RD High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light

IR LED and photodiode pair

Abstract: IR LED and photodiode PAIR DETECTOR HBCS-1100 kodak 6080 IPD5200
Contextual Info: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject

T 427 transistor

Abstract: HBCS-1100 White Paint IR LED and photodiode pair kodak 6080 High Resolution Optical Reflective Sensor IR LED and photodiode PAIR DETECTOR
Contextual Info: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: B U R R - BROWN« VSP2080 CCD SIGNAL FRONT-END PROCESSOR FOR DIGITAL CAMERAS FEATURES DESCRIPTION • CCD SIGNAL PROCESSING Correlated Double Sampling Black Level Clamping 0 to +34dB Gain Range 55dB SNR Referred to Full Scale • SELECTABLE LOGIC-INPUT POLARITY

transistor BD 139

Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a

darlington cascode second stage

Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors

71XS

Abstract: L55c AD712JR AD712KR AD712JN AD712KN
Contextual Info: ANALOG DEVICES Precision, Low Cost, High Speed, BiFET Op Amps FEATURES Enhanced Replacements for TL081; TL082; TL084 LF411; LF412; LF347 CONNECTION DIAGRAMS W LL N U U L ^ J ^ . AC PERFORMANCE Settles to ±0.01% in 1.0 |is 16 V/|is min Slew Rate 3 MHz min Unity Gain Bandwidth

HD64* serial

Contextual Info: Section 1 Overview The H8/3332 is a single-chip embedded controller w ith an H8/300 C P U core and a complement o f on-chip supporting modules. They are particularly suited for keyboard control in notebook computers and sim ilar applications. The H8/300 C P U is a high-speed processor with a Hitachi-original architecture featuring

Contextual Info: HC-5504B HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit January 1997 Description Features The Harris SLIC incorporates many of the B O R SH T functions on a single IC chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is

Contextual Info: Si GEC P L ES S E Y A P R IL 1995 SEMICONDU CT OR S DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM T he M A9187 6 4 k Static RAM is configured as 65536 x 1 bits and m anufactured using G P S ’s C M O S -S O S high perform ance, radiation hard, 1.5 ^m technology.

TK 2837

Abstract: journal op-amp 741 long range jammer gsm qpsk modulation experiment discussion tv jammer cir 2272 tv jammer data sheet Motorola Microwave power Transistor electromagnetic pulse generator jammer MZP RELAY
Contextual Info: PLL Performance, Simulation, and Design 4th Edition Dean Banerjee “Make Everything as Simple as Possible, but not Simpler.” Albert Einstein To my wife, Nancy, and my children, Caleb, Olivia, and Anabelle Preface I first became familiar with PLLs by working for National Semiconductor as

A1T TRANSISTOR

Contextual Info: IMDCIC MX29F81OO 8M -BITI1 M x 8 /5 1 2K x 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V +10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture