A1709
Abstract: TO126 package KTA1709 TO126
Text: SEMICONDUCTOR A1709 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1709 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1709 A1709 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009
|
Original
|
KTA1709
O-126
A1709
A1709
TO126 package
KTA1709
TO126
|
PDF
|
mswse-044
Abstract: MSWSE-044-10
Text: MSWSE-044-10 Silicon PIN Diode Switch Element 1 0805P PIN FUNCTION 1 ANODE 2 CATHODE 2 2 non-hermetic Description Features The MSWSE-044-010 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss
|
Original
|
MSWSE-044-10
0805P)
MSWSE-044-010
STD-J-20C
A17096
mswse-044
MSWSE-044-10
|
PDF
|
MSWSHB-020-30
Abstract: No abstract text available
Text: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
|
Original
|
MSWSHB-020-30
STD-J-20ation
A17098
MSWSHB-020-30
|
PDF
|
ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
|
Original
|
|
PDF
|
pin diode switch up to 10 GHz
Abstract: MSWSE-010-15 A 0503
Text: MSWSE-010-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-010-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 10W C.W. It has low insertion loss and medium isolation below 3.0 GHz.
|
Original
|
MSWSE-010-15
MSWSE-010-15
STD-J-20C
A17095
pin diode switch up to 10 GHz
A 0503
|
PDF
|
MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
|
Original
|
foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-050-10 Silicon PIN Diode Switch Element 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0805P non-hermetic Description Features The MSWSE-050-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 50 W C.W. It has low insertion loss.
|
Original
|
MSWSE-050-10
0805P)
MSWSE-050-10
STD-J-20C
A17097
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA
|
Original
|
MSWSH-100-30
A17090
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
|
Original
|
MSWSHB-020-30
STD-J-20C
A17098
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-044-10 Silicon PIN Diode Switch Element 1 0805P PIN FUNCTION 1 ANODE 2 CATHODE 2 2 non-hermetic Description Features The MSWSE-044-010 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss
|
Original
|
MSWSE-044-10
0805P)
MSWSE-044-010
STD-J-20C
A17096
|
PDF
|
Metelics
Abstract: No abstract text available
Text: MSWSSB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, High Linearity medium power series shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It
|
Original
|
MSWSSB-020-30
STD-J-20C
A17099
Metelics
|
PDF
|
MSWSE-050-10
Abstract: No abstract text available
Text: MSWSE-050-10 Silicon PIN Diode Switch Element 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0805P non-hermetic Description Features The MSWSE-050-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 70W C.W. It has low insertion loss.
|
Original
|
MSWSE-050-10
0805P)
MSWSE-050-10
STD-J-20C
A17097
|
PDF
|
l6703
Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Text: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS
|
Original
|
X3904U:
X3905U:
X3906U:
X3907U:
X3908U:
X3910W:
X3912W:
X3913W:
X3915W:
X3916U:
l6703
L6283
l6278
L6284
L6916
l6262
A1658
SVC 561 14
C3041
A1671
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSSB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, High Linearity medium power series shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It
|
Original
|
MSWSSB-020-30
A17099
|
PDF
|
|
|
ICP30
Abstract: 2SA1709
Text: A1709 / 2SC4489 Ordering number : EN3096A SANYO Semiconductors DATA SHEET A1709/2SC4489 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity
|
Original
|
2SA1709
2SC4489
EN3096A
2SA1709/2SC4489
2SA1709
ICP30
|
PDF
|
MSWSE-005-15
Abstract: Metelics STD-J-20C
Text: MSWSE-005-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-005-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 4W C.W. It has low insertion loss and medium isolation below 6.0 GHz.
|
Original
|
MSWSE-005-15
MSWSE-005-15
STD-J-20C
A17094
Metelics
STD-J-20C
|
PDF
|
10 GHz pin diode
Abstract: No abstract text available
Text: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
|
Original
|
MSWSHB-020-30
STD-J-20C
A17098
10 GHz pin diode
|
PDF
|
metelics
Abstract: No abstract text available
Text: MSWSHB-020-30 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is also suited for other
|
Original
|
MSWSHB-020-30
STD-J-20C
A17098
metelics
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-044-10 Silicon PIN Diode Switch Element 1 0805P PIN FUNCTION 1 ANODE 2 CATHODE 2 2 non-hermetic Description Features The MSWSE-044-010 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss
|
Original
|
MSWSE-044-10
0805P)
MSWSE-044-010
STD-J-20C
A17096
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
|
Original
|
MSWSHB-020-30
A17098,
|
PDF
|
A 0503
Abstract: No abstract text available
Text: MSWSE-005-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-005-30 is a PIN diode SPST switch element designed for medium incident power applications, up to 4W C.W. It has low insertion loss and medium isolation below 6.0 GHz.
|
Original
|
MSWSE-005-15
MSWSE-005-30
STD-J-20C
A17094
A 0503
|
PDF
|
MSWSHB-020-30
Abstract: No abstract text available
Text: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
|
Original
|
MSWSHB-020-30
STD-J-20C
A17098
MSWSHB-020-30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-010-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-010-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 10W C.W. It has low insertion loss and medium isolation below 3.0 GHz.
|
Original
|
MSWSE-010-15
MSWSE-010-15
STD-J-20C
A17095
|
PDF
|
l6703
Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Text: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS
|
Original
|
x3903U:
x3904U:
x3905U:
x3906U:
x3907U:
x3908U:
x3910W:
x3912W:
x3913W:
x3915W:
l6703
asm 1442
L6916E
SVC 561 14
L6232E
A1659
a1718
a1694
C2068
STR 6765
|
PDF
|
