A16A14 Search Results

Am29F010 Rev. A

Contextual Info: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

IS29F010-70PL

Contextual Info: IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y Oc t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

IS29F010-70PL

Abstract: IS29F010
Contextual Info: IS29F010 IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory PRELIMINARY OCTOBER 1998 FEATURES • High-performance CMOS – 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply – 5V ± 10% for Read, Program, and Erase

AS29F010

Abstract: Flash 32-PIN 5962-9669002HYA as29f010cw-70
Contextual Info: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7

EN29LV512

Contextual Info: EN29LV512 EN29LV512 da0. 512 Kbit 64K x 8-bit Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATURES • High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write

atmel 8086

Abstract: 49f020 m29F DATASHEET AM29F002 002N AT49 SST39SF010A SST39SF020A SST39SF040 SST39VF020
Contextual Info: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products Application Note April 2003 INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It

microchannel

Contextual Info: PIN CONFIGURATION FEATURES * * * * IBM Compatible ESDI Drive Interface Direct Connection to Micro Channel Bus Contains ESDI Drive Interface Logic 16-Bit DMA Transfers on Micro Channel at up to 5 Mbyte/sec IBM Register File Emulation Internal 26 Byte FIFO

Contextual Info: EN29LV010 EN29LV010 da0. 1 Megabit 128K x 8-bit Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read

cFeon

Abstract: cfeon 32 EN29LV010
Contextual Info: EN29LV010 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

M6MGB/T166S4BWG

Abstract: M6MGT166S4
Contextual Info: MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip

smd a5

Abstract: AS29F010D
Contextual Info: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690

32-PIN

Abstract: AS29F010
Contextual Info: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7

NEXFLASH

Abstract: NX29F010 NX29F010-90W AM29F010 NXPF001F-0600 nx29f01090p NX29F010-45W NX29F010-55W NX29F010-70W
Contextual Info: NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY JUNE 2000 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc • Single 5V-only Power Supply

EON SILICON DEVICES

Abstract: 555H EN29F010
Contextual Info: EN29F010 EN29F010 1 Megabit 128K x 8-bit 5V Flash Memory FEATURES • JEDEC Standard program and erase commands • 5.0V operation for read/write/erase operations • JEDEC standard DATA polling and toggle bits feature • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns

Contextual Info: AMDil A m 2 9 L V 0 1 0 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Am2F010

Abstract: AM29F010 AM29F01055 am29f010-90 AM29F010-70 Am29F010 Rev A
Contextual Info: FINA AMDB Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V +10% for read, erase, and program operations — Simplifies system-level power requirements

Stacked Chip Scale Package

Abstract: T166S2BWG 98000H-9FFFFH MITSUBISHI GATE ARRAY
Contextual Info: MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip

Contextual Info: NX29F010 NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY NOVEMBER 1999 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc

eon 29f

Abstract: 555H EN29F010 cFeon EN
Contextual Info: EN29F010 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all

ne 5555 timer

Abstract: NX29F010 AM29F010 NXPF001F-0600 NX29F010-45W NX29F010-55W NX29F010-70W NX29F010-90W
Contextual Info: NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY JUNE 2000 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc • Single 5V-only Power Supply

atmel 8086

Abstract: 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010
Contextual Info: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Application Note October 2005 Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It

Contextual Info: EN29LV512 EN29LV512 da0.Kbit 64K x 8-bit Uniform Sector, 512 CMOS 3.0 Volt-only Flash Memory FEATURES • High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write

NX29F010

Abstract: AM29F010 NXPF001F-0600 NX29F010-45W NX29F010-55W NX29F010-70W NX29F010-90W
Contextual Info: NX29F010 1M-BIT 128K x 8-bit CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY JUNE 2000 FEATURES • Ultra-fast Performance – 35, 45, 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc • Single 5V-only Power Supply