on SIM 300 MODULE
Abstract: No abstract text available
Text: D S 1 5 4 5 Y /A B DALLAS SEMICONDUCTOR Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power DS1645Y/AB NC | A16 1 1 A7 • Write protects selected blocks of m em ory w hen pro grammed
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DS1645Y)
DS1645AB)
64SY/AB
34-PIN
on SIM 300 MODULE
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PDF
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645Y
Abstract: No abstract text available
Text: DS 1645Y/A B DALLAS SEMICONDUCTOR FEATURES • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 128K x 8 volatile static RAM • W rite protects selected blocks of m em ory when pro
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1645Y/A
DS1645Y)
DS1645AB)
645Y/AB
DS1645Y/AB
34-PIN
645Y
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PDF
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a17 ct he nv
Abstract: No abstract text available
Text: DS1550Y/AB DALLAS SEMICONDUCTOR Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • Data is autom atically protected during power loss • Directly replaces 512K x 8 volatile static RAM • W rite protects selected blocks of m em ory when pro grammed
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DS1550Y/AB
DS1650Y)
DS1650AB)
34-PIN
a17 ct he nv
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PDF
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smd A7t
Abstract: smd code A7t
Text: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
smd A7t
smd code A7t
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PDF
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60395 xicor
Abstract: QML-38535 5962-3826705MXA AT28C010 5962-38267 5962-3826703MXA 5962-3826703 5962-3826701 CQCC1-N44
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED A Add packages T and W. Add vendor CAGE 60395 as source of supply. Increase data retention to 20 years, minimum. Redrawn with changes. 93-06-29 M. A. Frye B Changes in accordance with NOR 5962-R139-94. 94-03-29
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5962-R139-94.
5962-R278-94.
5962-R163-96.
0EU86
1FN41
60395 xicor
QML-38535
5962-3826705MXA
AT28C010
5962-38267
5962-3826703MXA
5962-3826703
5962-3826701
CQCC1-N44
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PDF
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IMS1600P45
Abstract: 4800Q 1601L
Text: IM S 1 6 0 0 IM S 1 6 0 1 L CMOS High Performance 64K x 1 Static RAM OGHmOS FEATURES • • • • • • • • • • • • • D E S C R IPTIO N IN M O S 'V e ry High Speed C M OS A d vanced P rocess - 1 .6 Micron Design Rules 6 4 K x 1 Bit O rganization
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300-m
S1600
IMS1600/1601L
IMS1600P45
4800Q
1601L
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78P018F is a mem ber of the ¿¡PD78018F Subseries w ithin the 78K/0 Series. The internal m ask ROM of the ¿¡PD78018F is replaced with one-tim e PROM or EPROM. Because the ¿¡PD78P018F can be program m ed by users, it is suited for applications involving the evaluation of
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PD78P018F
PD78018F
78K/0
PD78P018FDW
78P018FK
10943X
10535E
C10535J
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PDF
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Untitled
Abstract: No abstract text available
Text: Features * Read Access Time -12 0 ns * Word-wide or Byte-wide Configurable * Dual Voltage Range Operation - Unregulated Battery Power Supply Range, 2.7V to 3.6V or Standard 5V ±1 0% Supply Range * 8-Megabit Flash and Mask ROM Compatible Pinouts * Low Power CMOS Operation
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44-Lead
48-Lead
0988C
10/98/x
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PDF
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it27
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ /¿PD29F008AL-X 8M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 1M-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD29F008AL-X is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory configured as 8,388,608 bits
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PD29F008AL-X
uPD29F008AL-X
40-pin
64tation
it27
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PDF
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OA741
Abstract: 430VX D175B OTI-068 82438VX OTI077 Intel 82437 m026 TI07 82437VX
Text: PRELIMINARY INTEL 430VX PCISET 82437VX SYSTEM CONTROLLER TVX AND 82438VX DATA PATH UNIT (TDX) Supports All 3V Pentium Processors - Back-to-Back Read/Write Cycles at 3-1-1-1-1-1-1-1 - Supports Write-Back PCI 2.1 Compliant Integrated DRAM Controller - 64-Bit Path to Memory
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430VX
82437VX
82438VX
64-Bit
256-KB
512-KB
0F20h,
4fl2bl75
OA741
D175B
OTI-068
OTI077
Intel 82437
m026
TI07
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PDF
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Untitled
Abstract: No abstract text available
Text: AT27LV1024 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 V to 5.5 V Fast Read Access T im e -120 ns Compatible with JEDEC Standard AT27C1024 Low Power 3.3-Volt CMOS Operation 20 iA max. Standby 36 mW max. Active at 5 MHz for Vcc = 3.6 V
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AT27LV1024
AT27C1024
40-Lead
600-mil
44-Pad
V1024-25DC
AT27LV1024-25JC
AT27LV1024-25LC
AT27LV1024-25PC
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4015/bq4015Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >• D a ta retention in the absen ce of power T h e CM O S bq4015 is a nonvolatile 4,194,304-bit sta tic RAM organ ized a s 524,288 w ords by 8 bits. T h e in te g r a l con trol c irc u itry a n d lith iu m
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OCR Scan
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32-pin
10-year
bq4015/bq4015Y
512Kx8
bq4015
304-bit
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PDF
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sj 83100
Abstract: 9437184-BIT
Text: MITSUBISHI LS Is SRAM MODULE STATIC RAM 9 1M X 9 9 M. BIT Max. Access Typ e name Load m em ory tim e O utw ard dim ensions W X H X D (m m ) Data sheet page (ns) MH1M09SSP-25 25 MH1M09SSP-35 35 MH1M09SSP-45 ★★ M5M 51001 X 9 28.8 X 2 7 X 1 2.06 3/8 45
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MH1M09SSP-25
MH1M09SSP-35
MH1M09SSP-45
M09SSP-25
9437184-BIT
1048576-WORD
MH1M09SSP
sj 83100
9437184-BIT
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PDF
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0801b
Abstract: No abstract text available
Text: Features * * * * * * * * * * * Read Access Tim e - 90 ns Word-wide or Byte-wide Configurable 8-M egabit Flash and Mask ROM Compatable Low Power CMOS Operation - 100 |jA Maximum Standby - 50 mA Maximum Active at 5 MHz W ide Selection of JEDEC Standard Packages
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42-Lead
44-Lead
48-Lead
1024K
AT27C800
0801B
10/98/xM
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PDF
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ic ap 2068
Abstract: AP 1668 7C51 S019C-SEPTEM
Text: SMJ27C512 524288- BI T UV E R A S A B L E P R O G R A M M A B L E RE A D - O N L Y M E M O R Y S G M S019C-SEPTEM BER 1987 - REVISED AUGUST 1995 . . . 64K x 8 • Or ga n i za t i o n • Hi gh- R l iabil ity M I L - S T D - 8 8 3 C l a s s B Processing •
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SMJ27C512
S019C-SEPTEM
27C51
ic ap 2068
AP 1668
7C51
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PDF
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Untitled
Abstract: No abstract text available
Text: . IM S 1 6 0 0 IM S 1 6 0 1 L : cmos •■■" D D H riO S8 High Performance 64K x 1 Static RAM FEATURES • • • • • • • • • • • • • DESCRIPTION The IN M O S IM S 1600 is a high perform ance 64K * 1 C M O S S tatic RAM. The IM S1600 provides m axim um
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22-Pin,
300-m
22-Pin
24-Pin,
S1600
IMS1600/1601L
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PDF
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IMS1600P-55
Abstract: 1601L 1601 resistor pack IMS1600 IMS1601LM 508BH IMS1600E-25 IMS1600P-45 ims-1600p-55 IMS1600S45
Text: m o IM S 1 6 0 0 IM S 1 6 0 1 L CMOS High Performance 64K x 1 Static RAM s FEATURES DESCRIPTION IN M O S ' Very H igh Speed C M OS A dvanced Prooess - 1.6 M icron Design Rules 6 4 K x 1 B it O rganization 25, 30, 35, 45 and 55 n sec Access Tim es Fully TTL C om patible
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OCR Scan
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IMS1600
IMS1601L
22-Pin,
300-mil
22-Pin
24-Pin,
IMS1600/1601L
IMS1600P-55
1601L
1601 resistor pack
IMS1601LM
508BH
IMS1600E-25
IMS1600P-45
ims-1600p-55
IMS1600S45
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ,uPD 78P018FYis a mem ber of the ¿¡PD78018FY Subseries of 78K/0 Series products. The internal m ask ROM of the ¿¡PD78018FY is replaced with one-tim e PROM or EPROM. Because the ¿¡PD78P018FYcan be program m ed by users, it is ideally suited for applications involving the evaluation
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78P018FYis
PD78018FY
78K/0
PD78P018FYcan
PD78P018FYDW
018FY
13388E
C10535J
10535E
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PDF
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fia P124
Abstract: U12326E 78K D78P0 uPD78056F uPD780208 78058FY uPD78P058 uPD78P058F U12326E uPD78058F
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78P058F is an Electro Magnetic Interference EMI noise reduction version of the ¿¡PD78P058. The ¿¡PD78P058F is a m em ber of the ¿¡PD78058F Subseries of the 78K/0 Series, in which the on-chip m ask ROM
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uPD78P058F
uPD78P058
uPD78058F
78K/0
PD78058F
PD78058F,
78058FY
fia P124
U12326E 78K
D78P0
uPD78056F
uPD780208
U12326E
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PDF
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Untitled
Abstract: No abstract text available
Text: P R E LIM IN A R Y DATA S H EE T AIPD29F160L MOS INTEGRATED CIRCUIT 16M-BIT CMOS LOW-VOLT AGE FLASH MEMORY 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) Description The ^¡PD29F160L is a low-voltage (2.2 to 2.7 V, 2.7 to 3.6 V) flash memory organized as 16,777,216 bits in 35
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OCR Scan
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uPD29F160L
16M-BIT
16-BIT
PD29F160L
48-pin
14112EJ1V0D
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PDF
|
Untitled
Abstract: No abstract text available
Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel
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OCR Scan
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28F016SA
28F008SA
56-Lead,
28F016SA
28F032SA
|
PDF
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Untitled
Abstract: No abstract text available
Text: TMS29F040 4194304-BIT FLASH MEMORY SMJS820A - APRIL 1996 - REVISED JANUARY 1997 PM PACKAGE TOP VIE W S i ngl e P o w e r S up p l y 5 V ±10% 3.3 V ± 0 . 3 V - See ’2 9 L F 0 4 0 / ’2 9 V F 0 4 0 Data S he e t cm i n co oo O N. < < < < > I5 < 2.7 V to 3.6 V - S e e ’2 9 L F 0 4 0 / ’2 9 V F0 4 0
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OCR Scan
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TMS29F040
4194304-BIT
SMJS820A
|
PDF
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Untitled
Abstract: No abstract text available
Text: Features üimËL • Fast Interleave Cycle Time - 35 ns • Continuous Memory Interleaving - Unlimited Linear Access Data Output * Dual Voltage Range Operation - Low-Voltage Power Supply Range, 3.0V to 3.6V or Standard 5V ± 1 0 % Supply Range * Low-power CMOS Operation
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OCR Scan
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44-lead
40-lead
|
PDF
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BU 102S
Abstract: No abstract text available
Text: MITSUBISHI M EM OR Y CARD F LA S H M E M O R Y CAR DS MF8 2 5 7-G C D A T X X 8/16-bit Data Bus MF8 5 13-G C D A T X X Flash M e m o ry C ard MF81M1-GCDATXX MF82M1-GCDATXX C o n n e c to r T y p e Two-piece 68-pin ~7 Z I i P r o g ra m /e ra s e o p e ra tio n b y s o ftw a re c o m m a n d
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OCR Scan
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8/16-bit
MF81M1-GCDATXX
MF82M1-GCDATXX
68-pin
clfl25
BU 102S
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PDF
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