A140A Search Results

bft10

Contextual Info: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

Contextual Info: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a

TC551001

Abstract: TC554001
Contextual Info: T O S H IB A TC554001 FI/FTI-85#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FI/FTI is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates

A118C

Abstract: A147D L102K A109C A150B A166K A175H A147H A166A A129A
Contextual Info: SPECIFYING QUARTZ CRYSTALS Frequency Tolerance A typical quartz crystal specification reads like this: The cost of manufacture depends partly on the accuracy required at the reference temperature which in the case of the AT-cut crystal, is usually 25°C .

D23C8000

Abstract: X5060 D23c8
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD23C8000L 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The /xPD23C8000L is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode:

toshiba tc551001BPL

Abstract: TC551001 tc551001bpl
Contextual Info: T O S H IB A TC551001 BPI_/BFI_/BFTL/BTRI_/BSTL/BSRL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM

Contextual Info: TO SH IBA TC55V1001 AF/AFT/ATR/AST/ASR-85,-10,-85L.-1 OL T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM organized as

TB 1226 BN

Abstract: TB GUA 5365 MATERIAL TB GUA 5365 MATERIAL NEOPRENE E-23018 tb 1229 bn sj 2258 emp 5523 ASTM A123 galvanized iron thermal conductivity UL514
Contextual Info: 412031.A01 FIT 3/12 3/20/03 3:02 PM Page 1 A Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A2 Tables and Specifications . . . . . . . . . . . . . . . . . . . . . . A3 Rigid Metal Conduit/Intermediate Metal Conduit Fittings . . . . . . . . . . . . . . . . . . . A4-A38

Contextual Info: ADE-203-136E Z HM62Y256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 nm Hi-CMOS process • High speed Access time: 70/85/100 ns (max) • Low power

A17a

Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
Contextual Info: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time

Contextual Info: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Quartz Crystal Oscillators 3.57MHz

Abstract: crystal 3.579545MHZ hc49 hc49 12 Mhz Specification Quartz Crystals 3.57Mhz 5th overtone 120MHz crystal oscillator design l108d T807 Specification Quartz Crystals 1Mhz Crystal Oscillators 3.57MHz HC49 4.608MHZ
Contextual Info: QUARTZ CRYSTALS - Section Contents Specifying Quartz Crystals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Stock Quartz Crystals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

TC554001

Contextual Info: TOSHIBA TC554001 FL/FTL-70V#-8 5 V #-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates

TC554001

Contextual Info: TOSHIBA TC554001 FL/FTL-70L#-85L#-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates

Contextual Info: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a

Contextual Info: T O S H IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM

CD 5888 CB SMD IC

Abstract: A103j resistor network a103j RESISTOR smd diode S4 67A a103j network resistor a103j equivalent des circuit integre ttl C-MAc quartz a103g cepe ocxo
Contextual Info: New Products. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv SAWs Profile of C-MAC Frequency Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii

powerflex 753 programming manual

Abstract: 22A D4P0N104 Powerflex User Manual rockwell powerflex 753 wiring diagram Allen-Bradley 22A-D2P3N104 22A-D4P0N104 22-RF012-BL 22B-D2P3N104 22B-D4P0N104 22A-D1P4N104 22A-D6P0N104
Contextual Info: Technical Data PowerFlex 4-Class of AC Drives - PowerFlex™ 4 - PowerFlex™ 40 PowerFlex™ 4-Class AC Drives Technical Data Providing users with powerful motor speed control in a compact, space saving design, the Allen-Bradley PowerFlex 4-Class AC drives are the

XTAL003156

Abstract: C-MAC A103A xtal002997 xtal003336 L108K M153D crystal 3.579545MHZ hc49 insl000002 c-mac crystals a103a XTAL003074
Contextual Info: SPECIFYING QUARTZ CRYSTALS A typical quartz crystal specification reads like this: 20.0MHz HC49 15 30 20 30 Fund Frequency Tolerance BU T Frequency Holder Style Frequency Stability Where high initial accuracy is important the additional manufacturing cost should be weighed against the cost of

rockwell powerflex 753 wiring diagram

Abstract: 22A D4P0N104 Powerflex User Manual Allen-Bradley 22A-D2P3N104 powerflex 753 programming manual 140M-C2E-C16 powerflex 4 22B-D010N104 22B-D024N104 22-RJ45CBL-C20 22A-A3P6N103
Contextual Info: PowerFlex 4 and 40 Technical Data ADJUSTABLE FREQUENCY AC DRIVES PowerFlex 4 and 40 Technical Data Product Overview Providing users with powerful motor speed control in a compact, space saving design, the Allen-Bradley® PowerFlex® 4 and 40 AC drives are the smallest

PIC16F72 inverter ups

Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Contextual Info: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read

Contextual Info: 0 O P IEK Product Bulletin A140A April 1993 Four Channel Low Input Current Optocoupler Type A140A Functions Absolute Maximum Ratings T a = 2 5 °C u n le s s o th e rw is e n o te d • Operating T e m p e ra tu re . -55°C t o +150°C

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT UPD23C24000 24M-BIT MASK-PROGRAMMABLE ROM 3M-WORD BY 8-BIT BYTE MODE 1.5M-WORD BY 16-BIT(WORD MODE) Description T he /¿PD 23C 24000 is a 2 5 ,1 6 5 ,8 2 4 bits m a sk-p ro g ra m m a b le ROM. The w o rd org a n iza tio n is se lectab le (BYTE