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    A1385 TRANSISTOR Search Results

    A1385 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A1385 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1385

    Abstract: A-1385 A1385-Z
    Text: SILICON TRANSISTOR 2 S A 1 3 8 5 -Z PNP SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2S A1385-Z is designed fo r A u d io Frequency A m p lifie r and S w itchin g, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS in millimeters


    OCR Scan     		PDF 2SA1385-Z A1385-Z 2SC3518-Z 2SA1385-2 A1385 A-1385