A1357 transistor
Abstract: a1357 2SA1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)
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2SA1357
A1357 transistor
a1357
2SA1357
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A1357 transistor
Abstract: A1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)
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Original
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2SA1357
150HIBA
A1357 transistor
A1357
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PDF
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A1357 transistor
Abstract: a1357 Toshiba A1357 2SA1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)
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Original
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2SA1357
A1357 transistor
a1357
Toshiba A1357
2SA1357
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PDF
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