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    A11SELECT Price and Stock

    onsemi MURA115T3G

    DIODE STANDARD 150V 1A SMA
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    DigiKey MURA115T3G Reel 10,000 5,000
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    Bristol Electronics MURA115T3G 4,946
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    Richardson RFPD MURA115T3G 10,000
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    • 10000 $0.08
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    Avnet Asia MURA115T3G 5,000 10 Weeks 5,000
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    Vyrian MURA115T3G 7,958
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    NXP Semiconductors TJA1128HTK-1Z

    LIN MINI SYSTEM BASIS CHIP WITH
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    DigiKey TJA1128HTK-1Z Reel 6,000 6,000
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    Iriso Electronics Co Ltd IMSA-11501S-30A-GFN1

    CONN FFC BOTTOM 30POS 0.5MM R/A
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    DigiKey IMSA-11501S-30A-GFN1 Reel 6,000 1,500
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    NXP Semiconductors TJA1103AHN-0Z

    IC TRANSCEIVER FULL 1/1 36HVQFN
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    DigiKey TJA1103AHN-0Z Reel 4,000 4,000
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    Nexperia PZU10B2A,115

    DIODE ZENER 10V 320MW SOD323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PZU10B2A,115 Reel 3,000 3,000
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    Find more A11SELECT price and stock on Findchips.com

    A11SELECT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		128Mb: 096-cycle 09005aef80c97015 PDF

    M62352AGP

    Abstract: AO11 M62352GP A11018 VTR precision voltage reference
    Text: MITSUBISHI <Standard Linear IC> M62352AGP 8BIT 12CH D-A CONVERTER WITH BUFFER AMPLIFIERS DESCRIPTION M62352A is a CMOS structured semiconductor integrated ciruict integrating 12 channels of built-in D-A converters with high performance buffer operational amplifierf or each channel output.


    Original     		M62352AGP M62352A M62352AGP AO11 M62352GP A11018 VTR precision voltage reference PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		128Mb: 096-cycle 09005aef80c97015 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 PDF

    A04g

    Abstract: A05G M62352AGP
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    OCR Scan     		PDF

    MT48H8M16LFF4-8IT

    Abstract: MT48H8M16 A11 MARKING CODE 8M16 MT48H8M16LF MT48H8M16LFF4
    Text: 128Mb: x16 – Mobile SDRAM Features Synchronous DRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: 54-Ball FBGA Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		128Mb: MT48H8M16LF 54-Ball 096-cycle 09005aef80c97087/Source: 09005aef80c97015 MT48H8M16 MT48H8M16LFF4-8IT A11 MARKING CODE 8M16 MT48H8M16LFF4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB25D128800T L 128-Mbit Double Data Rate SDRAM Preliminary Datasheet 2002-04-26 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266B DDR266A DDR333 -8 -7.5 -7 -6 100 100 133 133 125 133 143 166 • Double data rate architecture: two data transfers


    Original     		HYB25D128800T 128-Mbit DDR200 DDR266B DDR266A DDR333 PDF

    TCMS

    Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
    Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		S72WS256N 16M/32M 16-bit) 16-bit TCMS S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95 PDF

    TCMS

    Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
    Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION


    Original     		S73WS256N 32M/16M 16-bit) 16-bit S72WS256N TCMS TRANSISTOR BFW 11 pin diagram marking code qa1 148 PDF

    MT48H8M16LFF4-8

    Abstract: MT48H8M16LFF4
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		128Mb: 096-cycle 09005aef80c97015 MT48H8M16LFF4-8 MT48H8M16LFF4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		128Mb: 096-cycle 09005aef80c97015 PDF

    8M16

    Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF
    Text: 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • VDD/VDDQ = 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 8M16 MT48H8M16LFB4-8 MT48 PDF

    Untitled

    Abstract: No abstract text available
    Text: S72WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE Distinctive Characteristics


    Original     		S72WS256N 16-bit) 16-bit S72WS PDF