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    Nexperia BC55-16PA,115

    TRANS NPN 60V 1A 3HUSON
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    DigiKey BC55-16PA,115 Cut Tape 97,537 1
    • 1 $0.42
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    BC55-16PA,115 Digi-Reel 97,537 1
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    BC55-16PA,115 Reel 90,000 3,000
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    Newark BC55-16PA,115 Bulk 783 5
    • 1 $0.356
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    • 100 $0.144
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    Rochester Electronics BC55-16PA,115 3,000 1
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    TME BC55-16PA,115 2,865 1
    • 1 $0.263
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    EBV Elektronik BC55-16PA,115 12,000 10 Weeks 3,000
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    New Advantage Corporation BC55-16PA,115 39,000 1
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    TDK Electronics B82422A1103J100

    FIXED IND 10UH 180MA 1.6 OHM SMD
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    DigiKey B82422A1103J100 Cut Tape 7,657 1
    • 1 $0.41
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    B82422A1103J100 Digi-Reel 7,657 1
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    B82422A1103J100 Reel 6,000 2,000
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    Newark B82422A1103J100 Cut Tape 3,640 5
    • 1 $0.499
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    TME B82422A1103J100 970 1
    • 1 $0.419
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    • 1000 $0.182
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    Nexperia BZA462A,115

    TVS DIODE 6.2VWM 9VC 6TSOP
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    DigiKey BZA462A,115 Digi-Reel 5,285 1
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    BZA462A,115 Cut Tape 5,285 1
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    BZA462A,115 Reel 3,000 3,000
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    TME BZA462A,115 1
    • 1 $0.326
    • 10 $0.237
    • 100 $0.121
    • 1000 $0.103
    • 10000 $0.103
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    Avnet Silica BZA462A,115 3,000 10 Weeks 3,000
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    Adam Technologies Inc CA-DKCA1-100LQ-I0I0

    COAX CBL U.FL MHF1 TO U.FL MHF1
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    DigiKey CA-DKCA1-100LQ-I0I0 Bag 294 1
    • 1 $2.1
    • 10 $1.787
    • 100 $1.5189
    • 1000 $1.29104
    • 10000 $1.21026
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    TDK Electronics B43564A1109M000

    CAP ALUM 10000UF 20% 160V SCREW
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    DigiKey B43564A1109M000 Bulk 32 1
    • 1 $130.05
    • 10 $130.05
    • 100 $115.97313
    • 1000 $115.97313
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    A11SELECT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


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    128Mb: 096-cycle 09005aef80c97015 PDF

    M62352AGP

    Abstract: AO11 M62352GP A11018 VTR precision voltage reference
    Text: MITSUBISHI <Standard Linear IC> M62352AGP 8BIT 12CH D-A CONVERTER WITH BUFFER AMPLIFIERS DESCRIPTION M62352A is a CMOS structured semiconductor integrated ciruict integrating 12 channels of built-in D-A converters with high performance buffer operational amplifierf or each channel output.


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    M62352AGP M62352A M62352AGP AO11 M62352GP A11018 VTR precision voltage reference PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


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    128Mb: 096-cycle 09005aef80c97015 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


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    128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 PDF

    A04g

    Abstract: A05G M62352AGP
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    OCR Scan
    PDF

    MT48H8M16LFF4-8IT

    Abstract: MT48H8M16 A11 MARKING CODE 8M16 MT48H8M16LF MT48H8M16LFF4
    Text: 128Mb: x16 – Mobile SDRAM Features Synchronous DRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: 54-Ball FBGA Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


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    128Mb: MT48H8M16LF 54-Ball 096-cycle 09005aef80c97087/Source: 09005aef80c97015 MT48H8M16 MT48H8M16LFF4-8IT A11 MARKING CODE 8M16 MT48H8M16LFF4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB25D128800T L 128-Mbit Double Data Rate SDRAM Preliminary Datasheet 2002-04-26 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266B DDR266A DDR333 -8 -7.5 -7 -6 100 100 133 133 125 133 143 166 • Double data rate architecture: two data transfers


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    HYB25D128800T 128-Mbit DDR200 DDR266B DDR266A DDR333 PDF

    TCMS

    Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
    Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


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    S72WS256N 16M/32M 16-bit) 16-bit TCMS S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95 PDF

    TCMS

    Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
    Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION


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    S73WS256N 32M/16M 16-bit) 16-bit S72WS256N TCMS TRANSISTOR BFW 11 pin diagram marking code qa1 148 PDF

    MT48H8M16LFF4-8

    Abstract: MT48H8M16LFF4
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original
    128Mb: 096-cycle 09005aef80c97015 MT48H8M16LFF4-8 MT48H8M16LFF4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


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    128Mb: 096-cycle 09005aef80c97015 PDF

    8M16

    Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF
    Text: 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • VDD/VDDQ = 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original
    128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 8M16 MT48H8M16LFB4-8 MT48 PDF

    Untitled

    Abstract: No abstract text available
    Text: S72WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE Distinctive Characteristics


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    S72WS256N 16-bit) 16-bit S72WS PDF